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    Process for manufacture of micro electromechanical devices having high electrical isolation
    92.
    发明公开
    Process for manufacture of micro electromechanical devices having high electrical isolation 有权
    一种用于生产微机电组件高绝缘处理

    公开(公告)号：EP0955668A3

    公开(公告)日：2003-05-07

    申请号：EP99109110.9

    申请日：1999-05-07

    Applicant: Rockwell Science Center, LLC

    Inventor： Yao, Jun J. ,  Anderson, Robert J.

    IPC: H01L21/00 ,  B81B3/00 ,  B81C1/00

    CPC classification number: B81C1/00484 ,  B81B2203/0118 ,  B81C2201/0108 ,  B81C2201/014 ,  B81C2201/019

    Abstract: The present invention relates to a fabrication process for manufacture of micro electromechanical (MEM) devices such as cantilever support beams. This fabrication process requires only two lithographic masking steps and offers moveable electromechanical devices with high electrical isolation. A preferred embodiment of the process uses electrically insulating glass substrate (102) as the carrier substrate and single crystal silicon (108) as the MEM component material. The process further includes deposition of an optional layer of insulating material (110) such as silicon dioxide on top of a layer of doped silicon (108) grown on a silicon substrate. The silicon dioxide (110) is epoxy bonded to the glass substrate (102) to create a silicon-silicon dioxide-epoxy-glass structure (200). The silicon is patterned using anisotropic plasma dry etching techniques. A second patterning then follows to pattern the silicon dioxide layer (110) and an oxygen plasma etch is performed to undercut the epoxy film (120) and to release the silicon MEM component. This two-mask process provides single crystal silicon MEMs with electrically isolated MEM component. Retaining silicon dioxide insulating material (110) in selected areas mechanically supports the MEM component.

    PACKAGING COMPATIBLE WAFER LEVEL CAPPING OF MEMS DEVICES
    94.
    发明公开
    PACKAGING COMPATIBLE WAFER LEVEL CAPPING OF MEMS DEVICES 有权
    填料的MEMS设备兼容CLIP在晶片级

    公开(公告)号：EP2788280A1

    公开(公告)日：2014-10-15

    申请号：EP12810454.4

    申请日：2012-12-06

    Applicant: Georgia Tech Research Corporation ,  Kohl, Paul, A. ,  Saha, Rajarshi ,  Fritz, Nathan

    Inventor： KOHL, Paul, A. ,  SAHA, Rajarshi ,  FRITZ, Nathan

    IPC: B81C1/00

    CPC classification number: B81C1/00261 ,  B81B3/0018 ,  B81C1/00333 ,  B81C2201/0108 ,  B81C2203/0154

    Abstract: This invention discloses and claims a cost-effective, wafer-level package process for microelectromechanical devices (MEMS). Specifically, the movable part of MEMS device is encapsulated and protected while in wafer form so that commodity, lead-frame packaging can be used. An overcoat polymer, such as, epoxycyclohexyl polyhedral oligomeric silsesquioxanes (EPOSS) has been used as a mask material to pattern the sacrificial polymer as well as overcoat the air-cavity. The resulting air-cavities are clean, debris-free, and robust. The cavities have substantial strength to withstand molding pressures during lead-frame packaging of the MEMS devices. A wide range of cavities from 20 μm×400 μm to 300 μm×400 μm have been fabricated and shown to be mechanically stable. These could potentially house MEMS devices over a wide range of sizes. The strength of the cavities has been investigated using nano-indentation and modeled using analytical and finite element techniques. Capacitive resonators packaged using this protocol have shown clean sensing electrodes and good functionality.

    ELIMINATION OF SILICON RESIDUES FROM MEMS CAVITY FLOOR
    96.
    发明公开
    ELIMINATION OF SILICON RESIDUES FROM MEMS CAVITY FLOOR 有权
    ENTFERNUNG VONSILICIUMRÜCKSTÄNDENAUS MEMS-HOHLRAUMBÖDEN

    公开(公告)号：EP2739562A2

    公开(公告)日：2014-06-11

    申请号：EP12746449.3

    申请日：2012-08-03

    Applicant: Cavendish Kinetics Inc.

    Inventor： TROY, Brian I. ,  RENAULT, Mickael ,  MAGUIRE, Thomas L. ,  LACEY, Joseph Damian Gordon ,  BOBEY, James F.

    IPC: B81C1/00

    CPC classification number: B81C1/00484 ,  B81B3/0008 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81C2201/0108 ,  H01H1/0036 ,  H01H2001/0089

    Abstract: The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is the removed along with then sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to adhere the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed.

    Abstract translation: 本发明一般涉及一种MEMS器件，其中来自粘合促进剂材料的硅残余物从空腔底板减少甚至消除。 粘合促进剂通常用于将牺牲材料粘附到衬底上方的材料。 粘附促进剂与牺牲材料一起被去除。 然而，粘合促进剂在除去后离开硅基残留物。 本发明人已经发现，在沉积牺牲材料之前，可以从空腔区域去除粘合促进剂。 保留在基材的其余部分上的粘合促进剂足以将牺牲材料粘附到基材上，而不用担心牺牲材料分层。 因为在器件的空腔区域中没有使用粘合促进剂，所以在MEMS器件的开关元件被释放之后，腔内将不存在硅残余物。

    PROCEDE DE FABRICATION DE MICROCANAUX SUR UN SUPPORT ET SUPPORT COMPRENANT DE TELS MICROCANAUX
    97.
    发明公开
    PROCEDE DE FABRICATION DE MICROCANAUX SUR UN SUPPORT ET SUPPORT COMPRENANT DE TELS MICROCANAUX 有权
    一种用于微通道的一个基片上制备和具有这种微通道的基片处理

    公开(公告)号：EP2401224A1

    公开(公告)日：2012-01-04

    申请号：EP10710083.6

    申请日：2010-02-24

    Applicant: Universite Des Sciences Et Technologies De Lille

    Inventor： ABBAS, Abdennour ,  GUILLOCHON, Didier ,  BOCQUET, Bertrand ,  SUPIOT, Philippe

    IPC: B81C1/00

    CPC classification number: B81C1/00071 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C2201/0108 ,  B81C2201/018

    Abstract: The invention relates to a method for making microchannels on a substrate, and to a substrate including such microchannels, which can particularly be used in the production of microstructured substrates for microelectronic, microfluidic and/or micromechanical systems. The method includes a step of (a) making at least one or at least two patterns (2) on the surface of a lower layer (1), and a step (b) of depositing, onto the lower layer and the pattern(s), a layer (3) of a polymer material produced by polymerisation in an optionally remote plasma-enhanced chemical vapour deposition reactor (PECVD, optionally RPECVD) of an organic or organometallic monomer with siloxane functions, e.g. tetramethyldisiloxane. The layer of polymer material is deposited so as to create, in the place of the pattern and after the decomposition of said pattern, or between two patterns without development-decomposition, a channel (4a, 4b, 4c, 4d), which is closed on at least a portion of the length thereof.

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