-
公开(公告)号：US20180334378A1
公开(公告)日：2018-11-22
申请号：US15637154
申请日：2017-06-29
Inventor： SHANG-YING TSAI , KUEI-SUNG CHANG , YUEH KANG LEE
CPC classification number: B81B3/001 , B81B2203/0127 , B81B2203/0315 , B81B2203/0361 , B81B2207/012 , B81C1/00404 , B81C2201/0198 , B81C2201/115
Abstract: A MEMS device includes a first structure including at least one first bump over a surface of the first structure, a second structure including a first side facing the surface of the first bump and a second side opposite to the first side, and a gap between the first structure and the second structure. The first structure and the second structure are configured to move in relation to each other. The first bump includes a plurality of first teeth over a stop surface of the first bump.
-
公开(公告)号：US09776852B2
公开(公告)日：2017-10-03
申请号：US15012311
申请日：2016-02-01
Inventor： Yuan-Chih Hsieh , Lee-Chuan Tseng , Hung-Hua Lin
CPC classification number: B81B3/0005 , B81B2207/012 , B81B2207/09 , B81C1/00238 , B81C1/00984 , B81C2201/115 , B81C2203/0118 , B81C2203/0792
Abstract: The present disclosure provides a method for manufacturing a CMOS-MEMS structure. The method includes etching a cavity on a first surface of a cap substrate; bonding the first surface of the cap substrate with a sensing substrate; thinning a second surface of the sensing substrate, the second surface being opposite to a third surface of the sensing substrate bonded to the cap substrate; etching the second surface of the sensing substrate; patterning a portion of the second surface of the sensing substrate to form a plurality of bonding regions; depositing an eutectic metal layer on the plurality of bonding regions; etching a portion of the sensing substrate under the cavity to form a movable element; and bonding the sensing substrate to a CMOS substrate through the eutectic metal layer.
-
公开(公告)号：US20170217756A1
公开(公告)日：2017-08-03
申请号：US15012311
申请日：2016-02-01
Inventor： YUAN-CHIH HSIEH , LEE-CHUAN TSENG , HUNG-HUA LIN
CPC classification number: B81B3/0005 , B81B2207/012 , B81B2207/09 , B81C1/00238 , B81C1/00984 , B81C2201/115 , B81C2203/0118 , B81C2203/0792
Abstract: The present disclosure provides a method for manufacturing a CMOS-MEMS structure. The method includes etching a cavity on a first surface of a cap substrate; bonding the first surface of the cap substrate with a sensing substrate; thinning a second surface of the sensing substrate, the second surface being opposite to a third surface of the sensing substrate bonded to the cap substrate; etching the second surface of the sensing substrate; patterning a portion of the second surface of the sensing substrate to form a plurality of bonding regions; depositing an eutectic metal layer on the plurality of bonding regions; etching a portion of the sensing substrate under the cavity to form a movable element; and bonding the sensing substrate to a CMOS substrate through the eutectic metal layer.
-
公开(公告)号：US09458009B2
公开(公告)日：2016-10-04
申请号：US14798112
申请日：2015-07-13
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Carsten Ahrens , Stefan Barzen , Wolfgang Friza
CPC classification number: B81B3/0072 , B81B3/001 , B81B3/0027 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , B81C1/00404 , B81C1/00984 , B81C2201/017 , B81C2201/115
Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.
-
95.发明授权Micromechanical tunable Fabry-Perot interferometer, an intermediate product, and a method for producing the same 有权微机械可调法布里 - 珀罗干涉仪，中间产品及其制造方法公开(公告)号：US09235043B2
公开(公告)日：2016-01-12
申请号：US13319337
申请日：2010-05-28
Applicant: Martti Blomberg
Inventor： Martti Blomberg
CPC classification number: G02B26/001 , B81B3/0013 , B81B2201/042 , B81C2201/115 , G01J3/26
Abstract: Controllable Fabry-Perot interferometers include two mirrors with a space between them. The mirrors are such that at least one layer is made of silicon-rich silicon nitride. Additionally, the mirrors' surfaces are formed to be of a roughness which reduces the risk of the mirrors sticking to each other.
Abstract translation: 可控Fabry-Perot干涉仪包括两个在它们之间有空间的反射镜。 这些反射镜使得至少一层由富硅的氮化硅制成。 另外，反射镜的表面形成为粗糙度，这减少了镜子彼此粘着的风险。
-
Patent Agency Ranking
96.发明授权公开(公告)号：US08030133B2
公开(公告)日：2011-10-04
申请号：US12413972
申请日：2009-03-30
Applicant: Robin Wilson
Inventor： Robin Wilson
CPC classification number: H01L29/34 , B81C1/00952 , B81C2201/115 , H01L21/76251
Abstract: A method of manufacturing a semiconductor device includes providing first and second semiconductor substrates, each having first and second main surfaces opposite to one another. A roughened surface is formed on at least one of the first main surface of the first semiconductor substrate and the second main surface of the second semiconductor substrate. A dielectric layer is formed on the first main surface of the semiconductor substrate and the second semiconductor substrate is disposed on the dielectric layer opposite to the first semiconductor substrate. The second main surface of the second semiconductor substrate contacts the dielectric layer.
Abstract translation: 一种制造半导体器件的方法包括提供第一和第二半导体衬底，每个具有彼此相对的第一和第二主表面。 粗糙表面形成在第一半导体衬底的第一主表面和第二半导体衬底的第二主表面中的至少一个上。 电介质层形成在半导体衬底的第一主表面上，第二半导体衬底设置在与第一半导体衬底相对的电介质层上。 第二半导体衬底的第二主表面接触电介质层。
-
公开(公告)号：US20110186089A1
公开(公告)日：2011-08-04
申请号：US12672993
申请日：2008-04-14
Applicant: Chang Han Je , Myung Lae Lee , Sung Hae Jung , Gunn Hwang , Chang Auck Choi
Inventor： Chang Han Je , Myung Lae Lee , Sung Hae Jung , Gunn Hwang , Chang Auck Choi
IPC: B08B3/00
CPC classification number: B81B3/001 , B81C2201/115
Abstract: An apparatus for preventing stiction of a three-dimensional MEMS (microelectromechanical system) microstructure, the apparatus including: a substrate; and a plurality of micro projections formed on a top surface of the substrate with a predetermined height in such a way that a cleaning solution flowing out from the microstructure disposed thereabove is discharged.
Abstract translation: 一种用于防止三维MEMS（微机电系统）微结构静止的装置，该装置包括：基板; 以及多个微型突起以预定的高度形成在基板的顶表面上，使得从布置在其上方的微结构流出的清洗溶液被排出。
-
98.发明申请LOW TEMPERATURE AMORPHOUS SILICON SACRIFICIAL LAYER FOR CONTROLLED ADHESION IN MEMS DEVICES 失效用于MEMS器件中控制粘合的低温非晶硅绝缘层公开(公告)号：US20110051224A1
公开(公告)日：2011-03-03
申请号：US12939909
申请日：2010-11-04
Applicant: James Randolph Webster , Thanh Nghia Tu , Xiaoming Yan , Wonsuk Chung
Inventor： James Randolph Webster , Thanh Nghia Tu , Xiaoming Yan , Wonsuk Chung
IPC: G02B26/00
CPC classification number: B81B3/0008 , B81B2201/042 , B81C2201/0107 , B81C2201/0109 , B81C2201/115 , G02B26/001 , Y10T428/24917
Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.
Abstract translation: 提供了减轻设备的可移动部件的永久性粘附或静电的机电系统装置的制造方法。 该方法提供了具有改进和可再现的表面粗糙度的非晶硅牺牲层。 非晶硅牺牲层对于机电系统器件中常用的材料进一步表现出优异的附着性。
-
公开(公告)号：US20100165442A1
公开(公告)日：2010-07-01
申请号：US12719751
申请日：2010-03-08
Applicant: Ming-Hau Tung , Lior Kogut
Inventor： Ming-Hau Tung , Lior Kogut
CPC classification number: B81C1/00801 , B81B3/001 , B81B3/0072 , B81B2201/042 , B81C2201/0109 , B81C2201/017 , B81C2201/112 , B81C2201/115 , G02B26/001 , Y10T428/30 , Y10T428/31678 , Y10T428/31935
Abstract: Methods of forming a protective coating on one or more surfaces of a microelectromechanical device are disclosed comprising the steps of forming a composite layer of a sacrificial material and a protective material, and selectively etching the sacrificial material to form a protective coating. The protective coatings of the invention preferably improve one or more aspects of the performance of the microelectromechanical devices in which they are incorporated. Also disclosed are microelectromechanical devices formed by methods of the invention, and visual display devices incorporating such devices.
Abstract translation: 公开了在微机电装置的一个或多个表面上形成保护涂层的方法，其包括以下步骤：形成牺牲材料和保护材料的复合层，并选择性地蚀刻牺牲材料以形成保护涂层。 本发明的保护性涂层优选地改进了其中并入其中的微机电装置的性能的一个或多个方面。 还公开了通过本发明的方法形成的微机电装置以及包括这种装置的视觉显示装置。
-
100.发明申请LOW TEMPERATURE AMORPHOUS SILICON SACRIFICIAL LAYER FOR CONTROLLED ADHESION IN MEMS DEVICES 有权用于MEMS器件中控制粘合的低温非晶硅绝缘层公开(公告)号：US20090305010A1
公开(公告)日：2009-12-10
申请号：US12133813
申请日：2008-06-05
Applicant: James Randolph Webster , Thanh Nghia Tu , Xiaoming Yan , Wonsuk Chung
Inventor： James Randolph Webster , Thanh Nghia Tu , Xiaoming Yan , Wonsuk Chung
CPC classification number: B81B3/0008 , B81B2201/042 , B81C2201/0107 , B81C2201/0109 , B81C2201/115 , G02B26/001 , Y10T428/24917
Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.
Abstract translation: 提供了减轻设备的可移动部件的永久性粘附或静电的机电系统装置的制造方法。 该方法提供了具有改进和可再现的表面粗糙度的非晶硅牺牲层。 非晶硅牺牲层对于机电系统器件中常用的材料进一步表现出优异的附着性。
-
-
-
-
-
-
-
-
-
Search Results
183
records
(took 0.045 seconds)
