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    국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치
    94.
    发明授权
    국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치 失效
    使用区域熔融带形成方法的MN-ZN铁素体信号晶体生成的工艺和装置

    公开(公告)号：KR100157323B1

    公开(公告)日：1999-02-18

    申请号：KR1019910025721

    申请日：1991-12-31

    Applicant: 삼성전기주식회사

    Inventor： 선우국현 ,  마재용 ,  김태훈

    IPC: C30B29/10

    CPC classification number: C30B15/34 ,  C30B15/00 ,  C30B29/24 ,  Y10T117/1008 ,  Y10T117/1036 ,  Y10T117/1068

    Abstract: A method and apparatus for producing a manganese-zinc ferrite single crystal using a local liquid pool formation which involves melting of a starting material in a crucible and lowering of the temperature of crucible to make the resultant melt maintain form three phase regions of an upper liquid pool region, an intermediate semi-rigid region and a lower solid region. A pair of heaters are disposed at the upper and side wall portions of crucible and controlled differently from each other so that the formed lower solid region extends at its peripheral portion throughout the inner surface of the side wall portion of the crucible, thereby minimizing the contact of the formed upper liquid pool region with the whole inner surface of the crucible. For monitoring respective temperatures of various portions in the crucible to control the heaters, there are provided thermocouples which includes a thermocouple for the crystal drawing port member, a thermocouple for the upper portion of crucible, a thermocouple for the upper portion of the side wall of crucible and a thermocouple for the lower portion of crucible.

    EFG CRYSTAL GROWTH APPARATUS AND METHOD
    95.
    发明授权
    EFG CRYSTAL GROWTH APPARATUS AND METHOD 有权
    EFG-晶体生长设备和方法

    公开(公告)号：EP1372805B1

    公开(公告)日：2009-10-14

    申请号：EP01998076.2

    申请日：2001-12-20

    Applicant: Schott Solar, Inc.

    Inventor： MACKINTOSH, Brian, H. ,  OUELLETTE, Marc

    IPC: C30B15/34

    CPC classification number: C30B29/06 ,  C30B15/20 ,  C30B15/34 ,  Y10T117/10 ,  Y10T117/1036 ,  Y10T117/104 ,  Y10T117/1056 ,  Y10T117/1068

    Abstract: An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit for melt replenishment during a crystal growth run. A feeder unit injects silicon particles upwardly through a center hub of the crucible/die unit and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of solid mass of silicon on the center hub and adjoining components. The invention also comprises use of a Faraday ring to alter the ratio of the electrical currents flowing through primary and secondary induction heating coils that heat the crucible die unit and the mechanical arrangement.

    THERMOELECTRIC DEVICE AND THERMOELECTRIC COOLER/HEATER
    98.
    发明公开
    THERMOELECTRIC DEVICE AND THERMOELECTRIC COOLER/HEATER 失效
    热敏电阻器（S）KÜHLER/HEIZGERÄT

    公开(公告)号：EP0805501A1

    公开(公告)日：1997-11-05

    申请号：EP96925134.7

    申请日：1996-07-30

    Applicant: Union Material Inc.

    Inventor： SAKURAGI, Shiro

    IPC: H01L35/32 ,  F25B21/02

    CPC classification number: C30B29/06 ,  C30B11/00 ,  C30B11/007 ,  C30B29/08 ,  C30B29/46 ,  C30B29/60 ,  F25B21/02 ,  F25D11/00 ,  H01L35/32 ,  H01L35/34 ,  H01L2924/0002 ,  Y10T117/1036 ,  H01L2924/00

    Abstract: A thermoelectric chip unit (1) comprises equal numbers of n-type thermoelectric semiconductor elements (30n) and p-type thermoelectric semiconductor elements (30p) that are held embedded within a single chip substrate (2). It is therefore difficult for the crystals of the thermoelectric semiconductor elements (30) to split at the cleavage surfaces thereof. The thermoelectric chip unit (1) can be made to be flexible by forming the chip substrate (2) of a flexible insulator such as plastic or rubber. A thermoelectric unit (4) comprises this thermoelectric chip unit (1) to which are attached electrodes (5). The thermoelectric unit (4) can be made to be flexible by forming the electrodes (5) of flexible members such as thin copper plates. A thermoelectric module (6) comprises the thermoelectric unit (4) to which is attached a flexible sheet or cover (8). This thermoelectric module (6) can be used as a cooling device for a computer's CPU or a semiconductor laser, or in an insulated refrigerator.

    Abstract translation: 热电芯片单元（1）包括相等数量的n型热电半导体元件（30n）和p型热电半导体元件（30p），其被嵌入在单个芯片衬底（2）内。 因此，热电半导体元件（30）的晶体在其解理面难以分裂。 通过形成诸如塑料或橡胶的柔性绝缘体的芯片基板（2），可以使热电晶片单元（1）变得柔性。 热电单元（4）包括该热电芯片单元（1），附接有电极（5）。 可以通过形成诸如薄铜板的柔性构件的电极（5），使热电单元（4）变得柔性。 热电模块（6）包括热电单元（4），其附接有柔性片或盖（8）。 该热电模块（6）可以用作计算机的CPU或半导体激光器的冷却装置，也可以用作绝缘冰箱。

    Method and apparatus for producing oxide series single crystals
    99.
    发明公开
    Method and apparatus for producing oxide series single crystals 失效
    生产氧化物系列单晶的方法和设备

    公开(公告)号：EP0763610A2

    公开(公告)日：1997-03-19

    申请号：EP96306173.4

    申请日：1996-08-23

    Applicant: NGK INSULATORS, LTD.

    Inventor： Imaeda, Minoru ,  Imai, Katsuhiro ,  Fukuda, Tsuguo

    IPC: C30B15/08 ,  C30B29/30

    CPC classification number: C30B15/08 ,  C30B15/00 ,  C30B29/30 ,  Y10S117/91 ,  Y10T117/1036 ,  Y10T117/1044

    Abstract: When producing an oxide-series single crystal by continuously pulling downwardly by µ pulling down method, the composition of the single crystal can properly and quickly controlled to continuously produce the single crystal of a constant composition by changing the pulling rate of the single crystal. Preferably, the pulling rate is 20-300 mm/hr, and the pulling rate is decreased with the proceeding of growing of the single crystal.

    Abstract translation: 当通过μ下拉法连续向下拉制备氧化物系单晶时，通过改变单晶的提拉速率，可以适当和快速地控制单晶的组成，以连续地生产具有恒定组成的单晶。 优选地，提拉速率为20-300mm / hr，随着单晶生长的进行，提拉速率降低。

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