公开(公告)号：WO2015016561A1

公开(公告)日：2015-02-05

申请号：PCT/KR2014/006904

申请日：2014-07-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： CHAE, Jong Hyeon ,  LEE, Joon Sup ,  SUH, Daewoong ,  KANG, Min Woo ,  KIM, Hyun A ,  ROH, Won Young ,  JANG, Jong Min

IPC: H01L33/62

CPC classification number: H01L33/14 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016

Abstract: Disclosed are a light emitting diode (LED), an LED module including the same, and a method of fabricating the same. The light emitting diode includes a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a first electrode pad region electrically connected to the first conductive-type semiconductor layer; a second electrode pad region electrically connected to the second conductive-type semiconductor layer; and a spark gap formed between a first leading end electrically connected to the first electrode pad region and a second leading end electrically connected to the second electrode pad region. The spark gap can achieve electrostatic discharge protection of the light emitting diode.

Abstract translation: 公开了一种发光二极管（LED），包括该发光二极管的LED模块及其制造方法。 发光二极管包括第一导电型半导体层; 第二导电型半导体层; 介于所述第一导电型半导体层和所述第二导电型半导体层之间的有源层; 电连接到第一导电型半导体层的第一电极焊盘区域; 电连接到第二导电型半导体层的第二电极焊盘区域; 以及形成在电连接到第一电极焊盘区域的第一前端与电连接到第二电极焊盘区域的第二前端之间形成的火花间隙。 火花隙可以实现发光二极管的静电放电保护。

公开(公告)号：WO2014163323A1

公开(公告)日：2014-10-09

申请号：PCT/KR2014/002568

申请日：2014-03-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： HAN, Chang Suk ,  KIM, Hwa Mok ,  KO, Mi So ,  LEE, A Ram Cha ,  SUH, Dae Woong

IPC: H01L33/12 ,  H01L33/04 ,  H01L33/32 ,  H01L21/20

CPC classification number: H01L33/06 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32

Abstract: A UV light emitting device and a method for fabricating the same are disclosed. The method includes forming a first super-lattice layer including Al x Ga (1-x) N on a substrate, forming a sacrificial layer including Al z Ga (1-z) N on the first super-lattice layer, partially removing the sacrificial layer, forming an epitaxial layer on the sacrificial layer, and separating the substrate from the epitaxial layer, wherein the sacrificial layer includes voids, the substrate is separated from the epitaxial layer at the sacrificial layer, and forming an epitaxial layer includes forming an n-type semiconductor layer including n-type Al u Ga (1-u) N (0

Abstract translation: 公开了一种UV发光器件及其制造方法。 该方法包括在衬底上形成包括Al x Ga（1-x）N的第一超晶格层，在第一超晶格层上形成包含AlzGa（1-z）N的牺牲层，部分去除牺牲层，形成 外延层，并且将所述衬底与所述外延层分离，其中所述牺牲层包括空隙，所述衬底在所述牺牲层处与所述外延层分离，并且形成外延层包括形成n型半导体层，所述n型半导体层包括 n型AluGa（1-u）N（0

公开(公告)号：WO2014133267A1

公开(公告)日：2014-09-04

申请号：PCT/KR2014/001024

申请日：2014-02-06

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： PARK, Ki Yon ,  KIM, Hwa Mok ,  HAN, Chang Suk ,  CHOI, Hyo Shik ,  KO, Mi So

IPC: H01L21/20

CPC classification number: H01L21/0254 ,  C30B25/00 ,  C30B25/02 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/30621 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/2003

Abstract: Embodiments of the invention provide a method of fabricating a nitride substrate. The method includes preparing a growth substrate; forming a sacrificial layer on the growth substrate, the sacrificial layer including an indium (In)-containing nitride horizontal etching layer and an upper nitride sacrificial layer disposed on the nitride horizontal etching layer; partially etching the sacrificial layer, the partially etching the sacrificial layer including horizontal etching of the nitride horizontal etching layer; forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE); and separating the nitride epitaxial layer from the growth substrate, wherein the nitride epitaxial layer is separated from the growth substrate in the nitride horizontal etching layer.

Abstract translation: 本发明的实施例提供一种制造氮化物衬底的方法。 该方法包括制备生长底物; 在所述生长衬底上形成牺牲层，所述牺牲层包括含铟（In）的氮化物水平蚀刻层和设置在所述氮化物水平蚀刻层上的上部氮化物牺牲层; 部分蚀刻牺牲层，部分地蚀刻牺牲层，包括氮化物水平蚀刻层的水平蚀刻; 通过氢化物气相外延（HVPE）在上部氮化物牺牲层上形成氮化物外延层; 以及从所述生长衬底分离所述氮化物外延层，其中所述氮化物外延层在所述氮化物水平蚀刻层中与所述生长衬底分离。

公开(公告)号：WO2014116065A1

公开(公告)日：2014-07-31

申请号：PCT/KR2014/000722

申请日：2014-01-24

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： KIM, Jong Rack ,  SON, Young Hwan ,  LEE, Seong Min ,  YI, Jae Seon

IPC: A61L9/20 ,  A61L9/16 ,  B01D46/00

CPC classification number: A61L9/00 ,  A61L2/00

Abstract: The present invention relate to a portable device for sterilization and deodorization, which exhibits highly efficient sterilization and deodorization functions by an effective combination of a direct sterilization structure utilizing UV light and a sterilization/deodorization structure utilizing a photocatalyst and can be easily attached to and detached from various products. The portable device for sterilization and deodorization includes: a case having an air inlet port, a discharge port and a UV light emission port; a filter disposed in the case and coated with a photocatalyst; a first ultraviolet light emitting diode (UV LED) module disposed in the case and configured to irradiate UV light having a first wavelength to the filter in order to activate the photocatalyst; and a second UV LED module disposed in the case and configured to irradiate UV light having a second wavelength to circulating air outside the case through the UV light emission port.

Abstract translation: 本发明涉及一种用于灭菌和除臭的便携式装置，其通过利用紫外光的直接灭菌结构和利用光催化剂的灭菌/除臭结构的有效组合而显示出高效的灭菌和除臭功能，并且可以容易地附着和分离 从各种产品。 用于灭菌和除臭的便携式装置包括：具有空气入口，排出口和UV光发射端口的壳体; 设置在壳体中并涂覆有光催化剂的过滤器; 第一紫外线发光二极管（UV LED）模块，设置在所述壳体中并且被配置为向所述滤光器照射具有第一波长的UV光以激活所述光催化剂; 以及第二UV LED模块，其设置在所述壳体中并且被配置为通过所述UV发光端口将具有第二波长的UV光照射到所述壳体外部的循环空气。

公开(公告)号：WO2014042438A1

公开(公告)日：2014-03-20

申请号：PCT/KR2013/008234

申请日：2013-09-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： YOU, Jong Kyun ,  KIM, Chang Yeon ,  KIM, Da Hye ,  IM, Tae Hyuk ,  KIM, Tae Gyun ,  KIM, Young Wug

IPC: H01L33/02 ,  H01L33/12 ,  H01L33/32

CPC classification number: H01L33/0075 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/0079

Abstract: Exemplary embodiments of the present invention disclose a method of fabricating a gallium nitride (GaN) based semiconductor device. The method includes growing GaN based semiconductor layers on a first surface of a GaN substrate to form a semiconductor stack, and separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique.

Abstract translation: 本发明的示例性实施例公开了一种制造基于氮化镓（GaN）的半导体器件的方法。 该方法包括在GaN衬底的第一表面上生长GaN基半导体层以形成半导体堆叠，并且使用线切割技术将GaN衬底的至少第一部分与半导体堆叠分离。

公开(公告)号：WO2014042371A1

公开(公告)日：2014-03-20

申请号：PCT/KR2013/007760

申请日：2013-08-29

Applicant: POSTECH ACADEMY-INDUSTRY FOUNDATION ,  SEOUL VIOSYS CO., LTD. ,  POSCO LED COMPANY LTD.

Inventor： LEE, Jong Lam ,  KIM, Ki Soo ,  KIM, Buem Joon ,  KIM, Kyeong Jun

IPC: H01L33/20 ,  H01L33/22

CPC classification number: H01L33/44 ,  H01L2933/0091

Abstract: Disclosed is a light emitting diode (LED). The LED includes a transparent substrate having a first surface and a second surface; a GaN-based semiconductor-laminated structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer and formed on the first surface of the transparent substrate; and a refractive index control layer formed on the second surface of the transparent substrate and having a pattern on a lower surface thereof. With the refractive index control layer, loss of light generated in a lower surface of the transparent substrate can be reduced to improve light extraction efficiency.

Abstract translation: 公开了一种发光二极管（LED）。 LED包括具有第一表面和第二表面的透明基板; 包括第一导电半导体层，有源层和第二导电半导体层并形成在透明基板的第一表面上的GaN基半导体层叠结构; 以及形成在所述透明基板的第二表面上并且在其下表面上具有图案的折射率控制层。 利用折射率控制层，可以减少在透明基板的下表面中产生的光的损失，以提高光提取效率。

公开(公告)号：WO2014017837A2

公开(公告)日：2014-01-30

申请号：PCT/KR2013006642

申请日：2013-07-24

Applicant: SEOUL VIOSYS CO LTD

Inventor： IM TAE HYUK ,  KIM CHANG YEON ,  KIM YOUNG WUG

IPC: H01L33/12 ,  H01L33/32

CPC classification number: H01L21/0254 ,  H01L33/0079 ,  H01L33/32

Abstract: A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack.

Abstract translation: 一种制造氮化镓（GaN）基半导体器件的方法。 该方法包括制备具有下表面和上表面的GaN衬底; 在GaN衬底的上表面上生长GaN基半导体层以形成半导体堆叠; 在半导体堆叠上形成支撑衬底; 并将GaN衬底与半导体堆叠分离。 GaN衬底的分离包括从GaN衬底的下表面照射激光。 激光透过GaN衬底的下表面并在由GaN衬底和半导体堆叠组成的结构内形成激光吸收区域。

公开(公告)号：WO2019125055A1

公开(公告)日：2019-06-27

申请号：PCT/KR2018/016482

申请日：2018-12-21

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： LEE, Chung Hoon ,  CHAE, Jong Hyeon ,  JANG, Seong Gyu ,  LEE, Ho Joon

IPC: H01L33/08 ,  H01L27/15

Abstract: A light emitting stacked structure including a plurality of epitaxial sub-units disposed one over another, each of the epitaxial sub-units configured to emit different colored light, in which each epitaxial sub-unit has a light emitting area that overlaps one another, and at least one epitaxial sub-unit has an area different from the area of another epitaxial sub-unit.

公开(公告)号：WO2019117656A1

公开(公告)日：2019-06-20

申请号：PCT/KR2018/015888

申请日：2018-12-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： CHAE, Jong Hyeon ,  JANG, Seong Gyu ,  LEE, Ho Joon

IPC: H01L33/08 ,  H01L33/50 ,  H01L21/02 ,  H01L33/36 ,  H01L33/00 ,  H01L27/12 ,  H01L27/15

Abstract: A light emitting stacked structure including a plurality of epitaxial sub-units disposed one over another, each epitaxial sub-unit configured to emit colored light having different wavelength band from each other, and a common electrode disposed between and connected to adjacent epitaxial sub-units, in which light emitting regions of the epitaxial sub-units overlap each other.

公开(公告)号：WO2018062885A1

公开(公告)日：2018-04-05

申请号：PCT/KR2017/010790

申请日：2017-09-28

Applicant: SEOUL VIOSYS CO., LTD. ,  SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： BARBER, Arthur Peter, III. ,  SHATALOV, Maxim S. ,  DOBRINSKY, Alexander ,  SHUR, Michael

IPC: A01G7/04 ,  A01G7/06 ,  A01G1/00 ,  G06Q50/02

Abstract: An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-A and ultraviolet-B radiation to irradiate the surface. Light sensors measure light intensity at the surface, wherein each sensor measures light intensity in a wavelength range that corresponds to a wavelength range emitted from at least one of the sources. A controller controls the light intensity over the surface by adjusting the power of the sources as a function of the light intensity measurements. The controller uses the light intensity measurements to determine whether each source is illuminating the surface with an intensity that is within an acceptable variation with a predetermined intensity value targeted for the surface. The controller adjusts the power of the sources as a function of the variation to ensure an optimal distribution of light intensity over the surface.

Abstract translation: 描述了用于控制光敏对象的表面上的紫外线强度的方法。 方面涉及使用包括紫外线A和紫外线B辐射的波长范围的紫外线辐射来照射表面。 光传感器测量表面处的光强度，其中每个传感器测量对应于从至少一个源发射的波长范围的波长范围内的光强度。 控制器通过根据光强度测量调整光源的功率来控制表面上的光强度。 控制器使用光强度测量来确定每个源是否以具有针对表面的预定强度值的可接受变化内的强度照亮表面。 控制器根据偏差调整光源的功率，以确保光线在表面上的最佳分布。