公开(公告)号：EP2173066B1

公开(公告)日：2012-05-16

申请号：EP09169415.8

申请日：2009-09-03

Applicant: STMicroelectronics Srl

Inventor： Scandurra, Alberto ,  Falconeri, Giuseppe ,  Mangano, Daniele

IPC: H04L12/46 ,  H04L12/56

CPC classification number: H04L49/10 ,  H04L49/109 ,  H04L49/55

公开(公告)号：EP1677348B1

公开(公告)日：2012-01-18

申请号：EP05028380.3

申请日：2005-12-23

Applicant: STMicroelectronics Srl

Inventor： Pavan, Alessia ,  Servalli, Giorgio ,  Clementi, Gesare

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L27/11526 ,  H01L27/105 ,  H01L27/11539

公开(公告)号：EP2048896B1

公开(公告)日：2011-12-21

申请号：EP07425643.9

申请日：2007-10-12

Applicant: STMicroelectronics Srl

Inventor： Botti, Edoardo ,  Gognano, Giovanni ,  Adduci, Pietro Mario

IPC: H04R29/00 ,  H04R5/04

CPC classification number: H04R29/001 ,  H04R1/26 ,  H04R29/003 ,  H04R2420/05

Abstract: The present invention relates to a method and a circuit for testing a tweeter (4B) in a bridge-type class D switching amplifier, said tweeter (4B) being part of a loudspeaker system (1A), wherein the method includes the steps of: applying a high-frequency voltage signal (VinAC) to one terminal (4D) of said tweeter (4B), said high-frequency voltage signal (VinAC) being generated by first electronic means (8); applying a constant voltage signal (VinDC) to the other terminal (4E) of said tweeter (4B), said constant voltage signal (VinDC) being generated by second electronic means (9); measuring a current I load that flows through said tweeter (4B) into said second electronic means (9); determining a connect/disconnect state of said tweeter (4B) from the value of said current (I load ).

公开(公告)号：EP1883076B1

公开(公告)日：2011-12-21

申请号：EP06425536.7

申请日：2006-07-28

Applicant: STMicroelectronics Srl ,  Hynix Semiconductor Inc.

Inventor： Crippa, Luca ,  Ravasio, Roberto ,  Micheloni, Rino

IPC: G11C16/10 ,  G11C11/56

CPC classification number: G11C16/10 ,  G11C7/18 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/3427

公开(公告)号：EP2026283B1

公开(公告)日：2011-11-16

申请号：EP08161219.4

申请日：2008-07-25

Applicant: STMicroelectronics Srl

Inventor： Barone, Massimiliano ,  Terruzzi, Davide

IPC: G06T11/00 ,  G06T11/20 ,  G06T5/00 ,  G06T11/40

CPC classification number: G06T11/001 ,  G06T11/40 ,  G06T15/005

公开(公告)号：EP2293325A3

公开(公告)日：2011-10-26

申请号：EP10183262.4

申请日：2001-12-14

Applicant: STMicroelectronics Srl

Inventor： Tiziani, Roberto ,  Passagrilli, Carlo

IPC: H01L21/60

CPC classification number: H01L24/05 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05083 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/85205 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/20755 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

Abstract: A semiconductor electronic device (1) is disclosed, which comprises a die (2) of semiconductor material and a support (3), the die (2) of semiconductor material including an integrated electronic circuit and a plurality of contact pads (6) associated with the electronic circuit and connected electrically to the support (3) by wire leads (4), each contact pad of said plurality of contact pads (6) comprising a lower layer (7) of aluminium, or alloys thereof and an upper layer. Advantageously the upper layer consists of:
a first film (8) of zinc overlying the lower layer (7) of aluminium or alloys thereof;
a second film (9) of nickel or alloys thereof, overlying the first film (8) of zinc;
a third film of palladium or alloys thereof, overlying the second film (9) of nickel or alloys thereof; and optionally
a fourth film (10) of gold or alloys thereof, overlying the third film of palladium or alloys thereof.
Moreover, the layer (7) or film (8,9, 10) are deposited by an electroless chemical process.

Abstract translation: 本发明公开了一种半导体电子器件（1），其包括半导体材料管芯（2）和支撑件（3），半导体材料管芯（2）包括集成电子电路和多个关联焊盘（6） 与电子电路并且通过引线（4）电连接到支撑件（3），所述多个接触垫（6）中的每个接触垫包括铝或其合金的下层（7）和上层。 有利地，上层由以下组成：覆盖在铝或其合金的下层（7）上的锌的第一膜（8） 覆盖锌的第一薄膜（8）的第二薄膜（9）或其合金; 覆盖镍或其合金的第二膜（9）的钯或其合金的第三膜; 以及可选地覆盖钯或其合金的第三膜的第四层金或其合金膜（10）。 此外，通过无电化学处理来沉积层（7）或膜（8,9,10）。

公开(公告)号：EP2273542A3

公开(公告)日：2011-10-26

申请号：EP10183247.5

申请日：2001-12-14

Applicant: STMicroelectronics Srl

Inventor： Tiziani, Roberto ,  Passagrilli, Carlo

IPC: H01L21/60 ,  H01L23/00

CPC classification number: H01L24/05 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05083 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/85205 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/20755 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

Abstract: A semiconductor electronic device (1) is disclosed, which comprises a die (2) of semiconductor material and a support (3), the die (2) of semiconductor material including an integrated electronic circuit and a plurality of contact pads (6) associated with the electronic circuit and connected electrically to the support (3) by wire leads (4), each contact pad of said plurality of contact pads (6) comprising a lower layer (7) of aluminium or alloys thereof, and an upper layer. Advantageously the upper layer consists of:
a first film (9) of palladium or alloys thereof, overlying the lower layer (7) of aluminium or alloys thereof; and optionally
a second film (10) of gold or alloys thereof, overlying the first film (9) of palladium or alloys thereof.
Moreover, the layer (7) or film (9, 10) are deposited by an electroless chemical process.

Abstract translation: 本发明公开了一种半导体电子器件（1），其包括半导体材料管芯（2）和支撑件（3），半导体材料管芯（2）包括集成电子电路和多个关联焊盘（6） 与电子电路并且通过引线（4）电连接到支撑件（3），所述多个接触垫（6）中的每个接触垫包括铝或其合金的下层（7）以及上层。 有利的是，上层由以下部分组成：钯或其合金的第一膜（9），覆盖铝或其合金的下层（7）; 以及可选地覆盖钯或其合金的第一膜（9）的第二金（或其合金）膜（10）。 此外，通过无电化学处理来沉积层（7）或膜（9,10）。

公开(公告)号：EP1381242B1

公开(公告)日：2011-08-10

申请号：EP03014057.8

申请日：2003-06-23

Applicant: STMicroelectronics Srl

Inventor： Pau, Danilo ,  Alfonso, Daniele ,  Piccinelli, Emiliano ,  Signorelli, Tiziana

IPC: H04N9/64 ,  G09G5/36

CPC classification number: G09G3/3611 ,  G09G3/3688 ,  G09G5/363 ,  G09G2340/02 ,  G09G2340/06 ,  H04N9/64

公开(公告)号：EP2341425A1

公开(公告)日：2011-07-06

申请号：EP09368054.4

申请日：2009-12-30

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics Srl

Inventor： D'Angelo, Giuseppe ,  Marchio', Fabio ,  Moselli, Giovanni ,  Roger, Andre

IPC: G06F7/552

CPC classification number: G06F7/5525

Abstract: One aim of the present invention is to provide a new method, and related system, to implement the square root extraction operation, which grants a 32 bits precision, which has high execution speed and is able to process a decimal radicand. An aspect of the present invention relates to a method for controlling an electric machine (110), comprising the detection of the value of at least one electrical quantity (I1, V1, I2, V2, I3, V3) characterizing the machine operation and processing the detected value of said electrical quantity. The control method controls the machine operation on the basis of this processing. In particular the processing of the detected value of the electrical quantity comprises calculating (125) a square root (205) of a radicand value (210) related to the detected value of electrical quantities. The calculation of the square root includes: calculating (220, 225) an approximated value (215, 230) of the square root, having a first precision, and then calculating (200; 300) a corrective value (293; 397) and combining (235) said approximated value with said corrective value to obtain a square root value having a second precision greater than the first precision.

Abstract translation: 本发明的一个目的是提供一种实现平方根提取操作的新方法和相关系统，其提供32位精度，其具有高执行速度并且能够处理十进制数。 本发明的一个方面涉及一种用于控制电机（110）的方法，包括检测表征机器操作和处理的至少一个电量（I1，V1，I2，V2，I3，V3）的值 所述电量的检测值。 该控制方法在此处理的基础上控制机器运行。 特别地，对电量检测值的处理包括计算（125）与检测到的电量相关的根数值（210）的平方根（205）。 平方根的计算包括：计算（220,225）平方根的近似值（215,230），具有第一精度，然后计算（200; 300）校正值（293; 397）并组合 （235）所述具有所述校正值的近似值以获得具有大于第一精度的第二精度的平方根值。

公开(公告)号：EP2333647A1

公开(公告)日：2011-06-15

申请号：EP10188925.1

申请日：2010-10-26

Applicant: STMicroelectronics Srl

Inventor： Virzì, Maria Celvisia Grazia

IPC: G06F3/043

CPC classification number: G06F3/0433 ,  G06F3/043

Abstract: A method for determining the position (O) of a contact on a panel (2) envisages: providing vibration sensors (4) fixed with respect to the panel (2), for generating vibration signals (S) as a function of mechanical vibrations generated by the contact on the panel (2); comparing each of the vibration signals (S) with at least a first threshold (c) for generating corresponding threshold-crossing signals (P); determining detection values of temporal differences (Δtf) between times of detection of the mechanical vibrations at pairs of the vibration sensors (4), as time distances between respective first significant edges of threshold-crossing signals (P) associated to the vibration sensors (4) of the pairs; and determining the position (O) of the contact as a function of the detection values of the temporal differences (Δtf). The method further envisages implementation of a reconstruction-and-filtering algorithm of the threshold-crossing signals (P) in order to identify a respective first significant edge thereof, prior to the determination of the detection values of the temporal differences (Δtf).

Abstract translation: 一个面板上的接触的确定性采矿位置（O）的方法，（2）设想：提供振动传感器固定相对于所述面板（2），用于产生振动信号（S），其产生的机械振动的功能（4） 通过在面板上的接触（2）; 用于产生对应的阈值交叉信号（P）比较与至少一个第一阈值（c）中每一个的振动信号（S）的; 的检测机械振动的时间之间的时间差（“TF）在对振动传感器（4）的（确定性采矿检测值，作为相关联的至振动传感器阈值交叉信号的respectivement第一显著边缘（P）之间的时间距离 4）对; 和确定性采矿接触为一体的时间差（“TF）的检测值的函数的位置（O）。 该方法以第一识别respectivement显著边缘，之前的时间差（“TF）的检测值的确定进一步设想执行阈值交叉信号（P）的重建和滤波算法的。