Abstract:
PURPOSE: A polymer electrolyte for a photo sensitized solar cell is provided to overcome low ion conductivity by phase-separating a polymer support region from a liquid electrolyte region and to manufacture a photo sensitized solar cell by a polymer support. CONSTITUTION: A polymer electrolyte(150) for a photo sensitized solar cell comprises a polymer component which is formed by the reaction of a UV-curable monomer and a photopolymerization initiator by polymerization or copolymerization and is selectively formed in a specific region. A liquid electrolyte formed of an oxidation-reducing derivative and organic solvent is formed outside the polymer region and has a structure that the polymer region and the liquid electrolyte region are phase-separated from each other. The electrolyte comprises 10-90 weight% of the UV-curable monomer component, 0.1-9 weight% of the photopolymerization initiator, and 10-90 weight% of the liquid electrolyte.
Abstract:
PURPOSE: A method for manufacturing a light absorption layer of a compound semiconductor solar battery is provided to produce a solar battery of high efficiency by forming the light absorption layer of large area improving the uniformity of a thin film without overhead equipment. CONSTITUTION: A first precursor solution is formed by mixing a Cu precursor with one or more precursors among an indium precursor, a gallium precursor, a zinc precursor, or a tin precursor(S110). A second precursor solution is formed by mixing the first precursor solution with one or more precursors between a selenium precursor and a sulfur precursor(S120). Paste is manufactured by mixing the second precursor solution with an ink composite in which a binder and a solvent are mixed(S130). The paste is coated on base material(S140). A post-heating process is executed(S150).
Abstract:
PURPOSE: A nonvolatile resistive memory device and a manufacturing method of the same are provided to form an active area of resistance memory device and an active area of thin transistor operating the resistance memory device using same material. CONSTITUTION: A bottom electrode(102) is formed on a substrate(103). A semiconductor film(101) including the IGZO is formed on the bottom electrode. An upper electrode(100) is formed in the semiconductor film. At least one of the bottom electrode and the upper electrode is made of one out of Pt, Ir, Au, and Ag.
Abstract:
본발명은상대습도 0 % 내지 50 %로조절된분위기에서금속할라이드(metal halide) 분말을포함하는혼합용액을도포하여금속할라이드박막을제조하는단계(단계 1); 및상기단계 1에서제조된금속할라이드박막을화학식 1의화합물을포함하는용액에침지시켜페로브스카이트나노구조체를형성하는단계(단계 2);를포함하는페로브스카이트나노구조체의제조방법을제공한다. 본발명에따른페로브스카이트나노구조체의제조방법은금속할라이드분말을사용함으로써조밀한구조의전구체막 제조와더불어균일및 결정성이우수한페로브스카이트나노구조체를제조할수 있다. 또한, 상대습도를조절하여제조된치밀한구조의금속할라이드박막을기반으로페로브스카이트나노구조체를형성할수 있다. 나아가, 금속할라이드박막에고농도의페로브스카이트상을형성하는용액을침지시켜페로브스카이트시드를형성한후, 저농도의페로브스카이트상을형성하는용액을침지시켜페로브스카이트나노구조체를제조하는방법으로결정성이우수한페로브스카이트나노와이어를제조할수 있다.