公开(公告)号：KR100550141B1

公开(公告)日：2006-02-08

申请号：KR1020040062352

申请日：2004-08-09

Applicant: 한국전자통신연구원

Inventor： 오광룡 ,  권오기 ,  김강호 ,  김종회 ,  김현수

IPC: H01S3/10 ,  H01S5/10 ,  H01S3/0941

Abstract: 본 발명은 오목곡면 회절격자와 반사거울의 사이에 삼각형 모양으로 이루어지며 전기적 신호에 따라 굴절률이 변화되는 가변 광 편향기가 형성된 파장 가변형 외부 공진 레이저 다이오드에 관한 것이다. 기계적인 움직임이 없이 전기적 신호를 이용하여 공진 주파수를 변화시킴으로써 동작이 안정적이며 빠른 속도의 연속적인 파장 가변이 가능해진다. 본 발명의 파장 가변형 외부 공진 레이저 다이오드를 InP/InGaAsP/InP 슬랩 도파로에 구현하면 반송자 수명시간에 의하여 결정되는 가변 시간을 수 ns 이하로 짧게 할 수 있으며, 소형화가 가능해지고, 제작 공정의 단순화로 제작 단가가 대폭 감소된다. 또한, 실리카(또는 폴리머)계 슬랩 도파로를 기반으로 오목곡면 회절격자를 설계하면 저분해능을 가지는 리쏘그라피 공정으로도 제작이 가능하기 때문에 회절격자의 재현성 및 균일도가 높아지며, 이에 따라 제작 단가가 감소된다.
가변 광 편향기, 수동 도파로, 슬랩 도파로, 회절격자, 굴절율

Abstract translation: 本发明包括在凹面衍射光栅，并涉及其中根据电信号的折射率变化的可调谐外部谐振器的激光二极管形成的组的可变光偏转器反射镜表面之间的三角形形状。 通过使用没有机械移动的电信号来改变谐振频率，可以实现稳定的操作和连续可变的速度调节。 实现在的InP /的InGaAsP /磷化铟平板波导的本发明的可变外部谐振波长激光二极管可以降低到由所述载流子寿命时间确定为ns以下的可变时间，小型化成为可能，以简化制造工艺 制造成本大大降低。 此外，当二氧化硅（或聚合物）设计基于表面光栅凹部基于由于图制作平板波导是可能的光刻工艺具有低分辨率增加衍射光栅，从而生产成本具有降低的量的重现性和均匀性 。

公开(公告)号：KR100519920B1

公开(公告)日：2005-10-10

申请号：KR1020020078257

申请日：2002-12-10

Applicant: 한국전자통신연구원

Inventor： 김현수 ,  김종회 ,  심은덕 ,  김강호 ,  권오기 ,  오광룡

IPC: H01S5/34

CPC classification number: H01S5/50 ,  H01S5/5072

Abstract: 본 발명은 n형 InP 기판의 내측 소정 부위로 형성된 회절격자에 대응하는 소정의 이득 고정 광증폭기 영역과, 상기 n형 InP 기판의 상면에 순차 적층되는 비도핑 InGaAsP 활성층, p형 InP 크레드층, InGaAs 오믹 접촉층과, 상기 InGaAs 오믹 접촉층의 상면에 적층되고 식각에 의한 홈으로 각각 절연 형성되는 1쌍의 상부 금속전극과, 상기 n형 InP 기판의 밑면으로 적층되는 하부 금속전극과, 양측면으로 적층 실드되는 무반사 박막으로 이루어진 다층 구조로 되어서 상기 InGaAs 오믹 접촉층에 포화 흡수체 영역과 이득 고정 광증폭기 영역이 나란히 배치된 구성에 의해 별도의 부수 장비 없이 포화 흡수체에 레이저광을 입사시켜 내부의 들뜬 이동자를 유도 방출시킴에 따라 상기 포화 흡수체의 회복시간을 단축하여 입사 광신호의 광도 변화와 상기 포화 흡수체의 흡광� ��수 변화가 거의 대칭적으로 안정되게 작동되도록 한 것이다.

公开(公告)号：KR1020040048145A

公开(公告)日：2004-06-07

申请号：KR1020020075921

申请日：2002-12-02

Applicant: 한국전자통신연구원

Inventor： 김종회 ,  오광룡 ,  김현수 ,  김강호 ,  권오기

IPC: G02B6/28

Abstract: PURPOSE: A wavelength conversion type electro-optic clock multiplier is provided to perform simultaneously a process for multiplying a frequency of an optical clock and a process for wavelength conversions providing an optical transmission system combined a WDM(wavelength division multiplexing) with a TDM(time division multiplexing) system with a flexible use. CONSTITUTION: A wavelength conversion type electro-optic clock multiplier includes a first photo coupler, a semiconductor optical amplifier, and a second photo coupler. The first photo coupler(13) is used for dividing the continuous beam of desired wavelength to paths. The semiconductor optical amplifier(16) is used for performing a phase modulation process for the continuous beam passing through the first path of two paths according to an optical clock having an arbitrary wavelength. The second photo coupler(14) is used for coupling the output light source from semiconductor optical amplifier to the continuous beam outputted from the second path of the first photo coupler.

Abstract translation: 目的：提供一种波长转换型电光时钟倍频器，用于同时执行用于将光时钟的频率和用于波长转换的处理相乘的处理，从而提供将WDM（波分复用）​​与TDM（时间 分割复用）系统灵活使用。 构成：波长转换型电光时钟倍增器包括第一光耦合器，半导体光放大器和第二光耦合器。 第一光耦合器（13）用于将所需波长的连续光束分成路径。 半导体光放大器（16）用于根据具有任意波长的光时钟，对通过两条路径的第一路径的连续光束进行相位调制处理。 第二光耦合器（14）用于将输出光源从半导体光放大器耦合到从第一光耦合器的第二路径输出的连续光束。

公开(公告)号：KR100429912B1

公开(公告)日：2004-05-03

申请号：KR1020020043246

申请日：2002-07-23

Applicant: 한국전자통신연구원

Inventor： 권오기 ,  오광룡 ,  김강호 ,  김종회 ,  김현수 ,  심은덕

IPC: G02B6/02

Abstract: PURPOSE: A ridge type semiconductor optical device integrated optical mode size converter is provided to improve a mode transition characteristic and reduce a dispersion loss by forming a top clad layer with a stepped structure. CONSTITUTION: A bottom clad layer(406) is formed on an upper surface of a semiconductor substrate(404). A passive waveguide layer(408) is formed on an upper surface of the bottom clad layer(406). An intermediate clad layer(410) is formed on an upper surface of the passive waveguide layer(408). An active layer(412) is formed on an upper surface of the intermediate clad layer(410). A top clad layer(414) is formed on an upper surface of the active layer(412). The top clad layer(414) has a stepped structure, which is lowered to a beam output terminal. A ridge(416) is formed at the beam output terminal.

Abstract translation: 目的：提供脊型半导体光学器件集成光学模式尺寸转换器，以通过形成具有阶梯结构的顶部包层来改善模式转换特性并减小色散损失。 构造：底部包层（406）形成在半导体衬底（404）的上表面上。 无源波导层（408）形成在底部包层（406）的上表面上。 中间包层（410）形成在无源波导层（408）的上表面上。 有源层（412）形成在中间包层（410）的上表面上。 顶部包覆层（414）形成在有源层（412）的上表面上。 顶部包层（414）具有阶梯状结构，该阶梯状结构降低到射束输出端。 脊（416）形成在射束输出端。

公开(公告)号：KR1020040034972A

公开(公告)日：2004-04-29

申请号：KR1020020063662

申请日：2002-10-18

Applicant: 한국전자통신연구원

Inventor： 김현수 ,  김종회 ,  심은덕 ,  김강호 ,  권오기 ,  오광룡

IPC: G02F2/02

CPC classification number: G02F2/004 ,  G02F2002/006

Abstract: PURPOSE: An element for processing an optical signal using a saturation absorber and an optical amplifier is provided to connect a saturation absorber and an optical amplifier in serial, and to make transparent output light strength outputted from the saturation absorber bigger than saturation input light strength of the optical amplifier, thereby removing noise and improving output light strength. CONSTITUTION: A passing power of a saturation absorber(100) is more than an absorption power if an incident light more than a transparent input light strength is injected, and the absorption power of the saturation absorber(100) is more than the passing power if an incident light less than the transparent input light strength is injected. An optical amplifier(110) is connected with the saturation absorber(100) in serial, and shows a saturation phenomenon at more than saturation input light strength. A transparent output light strength outputted when the transparent input light strength is inputted to the saturation absorber(100) is more than the saturation input light strength.

Abstract translation: 目的：提供一种使用饱和吸收器和光放大器处理光信号的元件，用于串联连接饱和吸收器和光放大器，并使饱和吸收器输出的透明输出光强度大于饱和吸收器的饱和输入光强度 光放大器，从而消除噪声并提高输出光强度。 构成：如果注入超过透明输入光强度的入射光，饱和吸收器（100）的通过功率大于吸收功率，并且饱和吸收器（100）的吸收功率大于通过功率，如果 注入小于透明输入光强度的入射光。 光放大器（110）与饱和吸收器（100）串联连接，并且在大于饱和输入光强度的情况下显示饱和现象。 当透明输入光强度输入到饱和吸收器（100）时输出的透明输出光强度大于饱和输入光强度。

公开(公告)号：KR1020030070163A

公开(公告)日：2003-08-29

申请号：KR1020020009177

申请日：2002-02-21

Applicant: 한국전자통신연구원

Inventor： 박경현 ,  백용순 ,  김성복 ,  오광룡

IPC: H01S5/30

CPC classification number: B82Y20/00 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/106 ,  H01S5/2081 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/34373

Abstract: PURPOSE: A method for fabricating a semiconductor photonic device is provided to form simultaneously two waveguides by performing a lithography process using a self-alignment method. CONSTITUTION: The first waveguide layer(302), the first clad layer(304), the second waveguide layer(306), and the second clad layer are sequentially stacked on a semiconductor substrate(300). The first hard mask is deposited on the second clad layer in order to form the first hard mask pattern. The second clad layer and the second waveguide layer are etched by using the first hard mask as an etch mask. An undoped InP layer is selectively grown on the etched part of the second clad layer and the second waveguide layer. The first hard mask pattern is removed. The second had mask pattern is formed on the resultant. The second waveguide layer and the first waveguide layer having different width are simultaneously formed by etching the undoped InP layer, the second clad layer, the second waveguide layer, the first clad layer, and the first waveguide layer.

Abstract translation: 目的：提供一种用于制造半导体光子器件的方法，以通过使用自对准方法执行光刻工艺同时形成两个波导。 构成：第一波导层（302），第一覆盖层（304），第二波导层（306）和第二覆盖层依次层叠在半导体基板（300）上。 为了形成第一硬掩模图案，第一硬掩模沉积在第二覆盖层上。 通过使用第一硬掩模作为蚀刻掩模蚀刻第二覆盖层和第二波导层。 在第二覆盖层和第二波导层的蚀刻部分上选择性地生长未掺杂的InP层。 第一个硬掩模图案被去除。 第二个在结果上形成了掩模图案。 通过蚀刻未掺杂的InP层，第二覆盖层，第二波导层，第一覆盖层和第一波导层，同时形成具有不同宽度的第二波导层和第一波导层。

公开(公告)号：KR1020030049475A

公开(公告)日：2003-06-25

申请号：KR1020010079683

申请日：2001-12-15

Applicant: 한국전자통신연구원

Inventor： 오광룡 ,  이명래 ,  김현수 ,  송정호 ,  김강호

IPC: G02F1/29

CPC classification number: H01S5/141 ,  H01S3/0815 ,  H01S3/1055 ,  H01S3/107 ,  H01S5/143

Abstract: PURPOSE: An optical deflector operating by an electric signal and a wavelength-varying external resonator using the optical deflector are provided to continuously rapidly vary a wavelength with an electric signal. CONSTITUTION: A wavelength-varying external resonator includes a light source(301) emitting beams having multiple wavelengths, a lens(302a) for producing parallel beams from the beams emitted from the light source, and a diffraction grating(304) for diffracting the parallel beams. The external resonator further includes a reflection mirror(305) for reflecting the incident beams and an optical deflector. The optical deflector is placed between the diffraction grating and the reflection mirror and refracts a beam having a specific wavelength among the beams from the diffraction grating according to an electric signal to input the beam having a specific wavelength to the reflection mirror. The beam reflected by the reflection mirror is condensed into the light source.

Abstract translation: 目的：提供使用光学偏转器的由电信号和波长变化的外部谐振器操作的光偏转器，以使用电信号连续快速地改变波长。 构成：波长变化的外部谐振器包括发射具有多个波长的波束的光源（301），用于从光源发射的光束产生平行光束的透镜（302a），以及用于衍射光栅 梁。 外部谐振器还包括用于反射入射光束的反射镜（305）和光学偏转器。 光学偏转器被放置在衍射光栅和反射镜之间，并且根据电信号折射来自衍射光栅的光束中的特定波长的光束，以将具有特定波长的光束输入到反射镜。 由反射镜反射的光束被聚光到光源中。

公开(公告)号：KR1020020026626A

公开(公告)日：2002-04-12

申请号：KR1020000057827

申请日：2000-10-02

Applicant: 한국전자통신연구원

Inventor： 정종술 ,  백용순 ,  오광룡

IPC: G02B6/14

Abstract: PURPOSE: An optical mode amplitude converter and a fabrication method thereof are provided, which has low reflection loss and low coupling loss and has a simple fabrication process. CONSTITUTION: An input optical waveguide(11) receiving an optical signal from an input optical fiber and an output optical waveguide(13) outputting an optical signal of converted mode amplitude to an output optical waveguide integrated circuit are integrated on an InP semiconductor substrate(1) by intervening a space region(14) in sequence. And a unilateral side-tapered optical waveguide(12) is integrated on the input optical waveguide and is tapered so that a width of a joint surface with the input optical waveguide becomes wider toward the direction of a light propagation, and converts a mode amplitude of the optical signal applied from the input optical waveguide adiabatically and then applies it to the output optical waveguide.

Abstract translation: 目的：提供一种光模式振幅转换器及其制造方法，其具有低反射损耗和低耦合损耗，并且具有简单的制造工艺。 构成：从输入光纤接收光信号的输入光波导（11）和向输出光波导集成电路输出转换模振幅的光信号的输出光波导（13）集成在InP半导体基板（1） ）依次插入空间区域（14）。 并且单边侧锥形光波导（12）被集成在输入光波导上并且是锥形的，使得与输入光波导的接合面的宽度朝向光传播的方向变宽，并且将 从输入光波导绝热施加的光信号，然后将其施加到输出光波导。

公开(公告)号：KR1020010048105A

公开(公告)日：2001-06-15

申请号：KR1019990052645

申请日：1999-11-25

Applicant: 한국전자통신연구원

Inventor： 박경현 ,  박찬용 ,  오광룡 ,  한선규

IPC: G02B5/20

Abstract: PURPOSE: An optical filter for grating-assisted vertical coupler is provided to improve the characteristics by making the first and second waveguides vertical couplers while making it easy to arrange the waveguides and enabling a simple manufacturing process. CONSTITUTION: In the method of manufacturing the optical filter for grating-assisted vertical coupler, an n-type lnP buffer layer(22) of n-type lnP is formed on an n-type lnP board. The depth is between 0.5 and 1 micro-m. A lnGaAsP first waveguide layer is formed on the buffer layer(22). The depth is between 0.3 and 0.8 micro-m, the width is between 1 and 3 micro-m and the length is between 3 and 10 m. An n-type lnGaAsP lattice layer(25) is formed 0.1 to 0.5 micro-m above the first waveguide layer. The depth is between 0.02 and 0.2 micro-m. An n-type lnP buffer layer(24) is formed blocking gaps of lattices. P-type lnGaAsP second waveguide layers(26a-d) are formed above the buffer layer(24). Finally, on the top is formed a p-type lnP clad layer.

Abstract translation: 目的：提供用于光栅辅助垂直耦合器的滤光器，通过制造第一和第二波导垂直耦合器来提高特性，同时易于布置波导并实现简单的制造工艺。 构成：在制造用于光栅辅助垂直耦合器的滤光器的方法中，在n型lnP板上形成n型lnP的n型lnP缓冲层（22）。 深度在0.5和1微米之间。 在缓冲层（22）上形成有lnGaAsP第一波导层。 深度在0.3和0.8微米之间，宽度在1微米和3微米之间，长度在3和10微米之间。 在第一波导层上方0.1〜0.5微米处形成n型InGaAsP晶格层（25）。 深度介于0.02和0.2微米之间。 形成阻挡晶格间隙的n型lnP缓冲层（24）。 P型lnGaAsP第二波导层（26a-d）形成在缓冲层（24）的上方。 最后，顶部形成了p型lnP覆层。

公开(公告)号：KR100265861B1

公开(公告)日：2000-09-15

申请号：KR1019960069763

申请日：1996-12-21

Applicant: 한국전자통신연구원 ,  주식회사 케이티

Inventor： 이상민 ,  오광룡 ,  안주헌 ,  김정수

IPC: H01L21/467

Abstract: PURPOSE: A method for manufacturing a gradually tapered waveguide is to increase an optical coupling efficiency with an optical fiber by improving the structure of a waveguide of input/output terminal of an optical waveguide device. CONSTITUTION: A waveguide layer(62) is formed on a substrate(61), and a clad layer(61a) is formed on the waveguide layer. The first etching mask with a width of an opening being gradually increased is formed on the clad layer. The clad layer and waveguide layer are etched through a reactive ion etching process to form a waveguide layer with a thickness thereof gradually decreased. The clad layer and the waveguide layer are etched using the second etching mask to form the waveguide layer in a shape of arrowhead. The width of the opening of the first etching mask is gradually increased from 4 micro meters to 10 micrometers. Material of the first and second masks is SiNx.

Abstract translation: 目的：制造逐渐变细的波导的方法是通过改善光波导器件的输入/输出端子的波导的结构来提高光纤的光耦合效率。 构成：在基板（61）上形成波导层（62），在波导层上形成包覆层（61a）。 在包覆层上形成具有逐渐增加的开口宽度的第一蚀刻掩模。 通过反应离子蚀刻工艺蚀刻包覆层和波导层以形成其厚度逐渐减小的波导层。 使用第二蚀刻掩模蚀刻包覆层和波导层，以形成箭头形状的波导层。 第一蚀刻掩模的开口宽度从4微米逐渐增加到10微米。 第一和第二掩模的材料是SiNx。