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公开(公告)号：KR101385108B1
公开(公告)日：2014-04-29
申请号：KR1020090126196
申请日：2009-12-17
Applicant: 한국전자통신연구원
CPC classification number: G02F1/3534 , G02F2203/13 , G02F2203/70 , H01S5/0092 , H01S5/02248 , H01S5/06216 , H01S5/50
Abstract: 본 발명은 테라헤르츠파를 생성 및 검출하기 위한 포토믹서 모듈에 관한 것이다. 본 발명의 실시 예에 따른 포토믹서 모듈은, 입사되는 레이저광을 증폭시키는 반도체 광증폭기; 그리고 상기 증폭된 레이저광에 여기되어 연속 테라헤르츠파를 생성하는 포토믹서를 포함하되, 상기 반도체 광증폭기와 상기 포토믹서는 단일 모듈로 형성된다.
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公开(公告)号：KR101191237B1
公开(公告)日：2012-10-16
申请号：KR1020080129530
申请日：2008-12-18
Applicant: 한국전자통신연구원
IPC: H04B10/2581 , H04J14/00 , G02B6/34
CPC classification number: G02B6/124 , G02B6/02095 , G02B6/29394 , H01S5/1215 , H01S5/125 , H01S5/5045 , H04B10/25137 , H04B10/2587 , H04B10/272 , H04J14/02 , H04J14/0246 , H04J14/0252 , H04J14/0282 , H04J2014/0253
Abstract: Provided is an upstream source light generator of a passive optical network (PON) system. The upstream source light generator includes an amplification part configured to amplify injection light, and a reflection part configured to receive the amplified injection light and generate reflection light by reflecting the amplified injection light with different optical delays according to wavelengths of the amplified injection light.
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公开(公告)号：KR1020100072534A
公开(公告)日：2010-07-01
申请号：KR1020080130965
申请日：2008-12-22
Applicant: 한국전자통신연구원
CPC classification number: H01S5/06256 , H01S5/0623 , H01S5/1215 , H01S2302/02
Abstract: PURPOSE: A semiconductor laser device is provided to diversify the output characteristic itself of laser by controlling the refractive index or the reflectivity through the injection. CONSTITUTION: A gain area(101) provides the production of the lights of the plural wavelength and gain. A first reflective area(102) reflects the light of the first wave length in response to a first selection signal among the lights of the wave length to the gain area. A second reflective area(104) reflects the light of the second wave length in response to the second selective signal among the lights of the wave length to the gain area. A phase adjustment area(103) is located in the first reflective region and the second between reflective regions. The phase adjustment area transfers the optical phase of the second wavelength in response to the phase adjust signal.
Abstract translation: 目的：提供一种半导体激光器件，通过控制折射率或通过注射的反射率来使激光的输出特性本身多样化。 构成：增益区（101）提供多波长和增益的光的产生。 第一反射区域（102）响应于波长的光中的第一选择信号而将第一波长的光反射到增益区域。 第二反射区域（104）响应于波长的光中的第二选择信号而将第二波长的光反射到增益区域。 相位调整区域（103）位于第一反射区域中，第二区域位于反射区域之间。 相位调整区域响应于相位调整信号传送第二波长的光学相位。
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公开(公告)号：KR100899808B1
公开(公告)日：2009-05-28
申请号：KR1020070111014
申请日：2007-11-01
Applicant: 한국전자통신연구원
IPC: G02B5/18
CPC classification number: G02B6/356 , G02B6/12019
Abstract: 파장 선택 스위치가 개시된다. 본 발명의 파장 선택 스위치는 복수의 파장이 입사된 광을 파장별로 분리하여 출력하는 광 역다중화기; 파장별로 분리된 광을 선택적으로 증폭 또는 흡수하는 광 증폭기; 광 증폭기의 출력을 선택적으로 편향시키는 광 편향기; 및 선택적으로 편향된 광을 다중화하여 출력하는 광 다중화기를 포함함을 특징으로 한다.
파장 선택 스위치, 광 편향기, 광 다중화기, 광 역다중화기, 광 증폭기-
公开(公告)号：KR100734860B1
公开(公告)日：2007-07-03
申请号：KR1020050119285
申请日：2005-12-08
Applicant: 한국전자통신연구원
IPC: G02B6/26
CPC classification number: H04B10/299
Abstract: Provided is an apparatus and method for simultaneous optical wavelength conversion and optical clock signal extraction using semiconductor optical amplifiers (SOAs). The apparatus includes: a wavelength converter receiving a pump beam having input information and a probe beam having a different wavelength from the pump beam, and outputting the pump beam with an overshoot shifted to a red wavelength and an undershoot shifted to a blue wavelength due to non-linear characteristics and self-phase modulation of semiconductor optical amplifiers (SOAs) and the probe beam delivered the input information from the pump beam; an optical divider dividing output paths of the probe beam to which the input information has been delivered and the pump beam having the overshoot and the undershoot; a converted-wavelength extractor filtering the probe beam received from the optical divider; and a clock data regenerator obtaining a pseudo return-to-zero (PRZ) signal from the pump beam received from the optical divider and extracting a clock signal from the PRZ signal. The apparatus and method can simultaneously perform wavelength conversion and optical clock signal extraction on an NRZ signal using an optical method, without converting the NRZ signal into an electrical signal.
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Patent Agency Ranking
公开(公告)号：KR1020060067111A
公开(公告)日：2006-06-19
申请号：KR1020050041287
申请日：2005-05-17
Applicant: 한국전자통신연구원
IPC: H01L31/10
CPC classification number: H01L31/109 , H01L31/02366 , H01L31/18
Abstract: 본 발명은 단일 집적 반도체 광소자의 제조방법에 관한 것으로, 능동 및 수동 도파로 영역이 분리된 기판 상에 완충층을 형성하고, 상기 능동 도파로 영역의 완충층 상에 제1 활성층 및 제1 클래드층과, 상기 수동 도파로 영역의 완충층 상에 제2 활성층 및 제2 클래드층을 선택적 결정 성장하여 수직 정렬하는 단계와, 상기 제1 및 제2 클래드층 상부의 소정영역에 제1 및 제2 마스크를 형성하는 단계와, 상기 제1 및 제2 마스크를 이용하여 메사 형태의 능동 및 수동 도파로가 각각 형성되도록 상기 완충층의 소정깊이까지 식각하는 단계와, 상기 제2 마스크를 제거한 후 전체 구조의 상부에 소정두께의 제3 클래드층을 형성하는 단계와, 상기 제1 마스크를 제거한 후 전체 구조의 상부에 제4 클래드층을 형성하는 단계를 포함함으로써, 도파 손실을 최대한 줄이 고 제작 공정도 단순화할 수 있는 효과가 있다.
단일 집적 반도체, 광소자, 수동 도파로, 능동 도파로-
公开(公告)号：KR100471379B1
公开(公告)日：2005-03-10
申请号：KR1020020063662
申请日：2002-10-18
Applicant: 한국전자통신연구원
IPC: G02F2/02
CPC classification number: G02F2/004 , G02F2002/006
Abstract: 본 발명은 광 게이트로 사용하여 입력신호의 소광비를 향상시킬 수 있는 포화흡수체가 집적된 광 증폭기를 이용하여 출력광 평탄화, 파장 변환, 재형상화와 재증폭 등 다양한 기능을 수행할 수 있는 광신호 처리용 소자에 관한 것으로, 포화 흡수체와 광증폭기를 직렬로 접속하고, 상기 포화 흡수체에 입력되어 출력된 투명 출력 광세기가 광증폭기의 포화입력 광세기 보다 큰 것을 특징으로 하는 광신호 처리용 소자를 제공한다.
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公开(公告)号：KR1020040096376A
公开(公告)日：2004-11-16
申请号：KR1020030029440
申请日：2003-05-09
Applicant: 한국전자통신연구원
IPC: H01S5/32
Abstract: PURPOSE: An optical device and a fabricating method thereof are provided to reduce the optical loss of a passive waveguide by forming an undoped cladding layer on a passive waveguide region. CONSTITUTION: An active mesa pattern(120) is formed on an active waveguide region of a substrate. A passive mesa pattern(122) is formed on a passive waveguide region of the substrate. A first undoped cladding layer(124), an N-type cladding layer(126), and a first P-type cladding layer(128) are sequentially formed on the entire structure. The first P-type cladding layer, the N-type cladding layer, and the first undoped cladding layer are removed from the active waveguide region by performing a pattering process. A second P-type cladding layer(130) is formed on the entire structure. An ohmic contact layer(132) is formed on the second P-type cladding layer.
Abstract translation: 目的：提供一种光学器件及其制造方法，以通过在无源波导区域上形成未掺杂的包层来减少无源波导的光学损耗。 构成：在衬底的有源波导区域上形成活性台面图案（120）。 无源台面图案（122）形成在衬底的无源波导区域上。 在整个结构上依次形成第一未掺杂的包覆层（124），N型包覆层（126）和第一P型包覆层（128）。 通过进行图案化处理，从有源波导区域去除第一P型包覆层，N型包覆层和第一未掺杂包覆层。 在整个结构上形成第二P型包覆层（130）。 欧姆接触层（132）形成在第二P型覆层上。
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公开(公告)号：KR1020040056555A
公开(公告)日：2004-07-01
申请号：KR1020020083056
申请日：2002-12-24
Applicant: 한국전자통신연구원
IPC: G02B6/13
Abstract: PURPOSE: A method for forming a vertical taper using a diffusion phenomenon is provided to enhance a degree of integration of an optical device and simplify conditions of an etching process by using a diffusion-limited etching method to form the vertical taper. CONSTITUTION: A lower peripheral layer(2) of a waveguide, a center layer(3) of the waveguide, an upper peripheral layer(1) of the waveguide, and a selective etching layer(7) are sequentially formed on a substrate. A long ribbon-shaped etching mask(6) is formed on the selective etching layer. The selective etching layer is etched to the inside of the etching mask by using a selective etching solution. A capillary flat plate is formed by the etching process. The upper peripheral layer of the waveguide is partially etched by using the diffusion-limited etching solution.
Abstract translation: 目的：提供使用扩散现象形成垂直锥形的方法，以通过使用扩散限制蚀刻方法来提高光学器件的集成度并简化蚀刻工艺的条件以形成垂直锥形。 构成：在衬底上依次形成波导的下周边（2），波导的中心层（3），波导的上周边（1）和选择性蚀刻层（7）。 在选择性蚀刻层上形成长的带状蚀刻掩模（6）。 通过使用选择性蚀刻溶液将选择性蚀刻层蚀刻到蚀刻掩模的内部。 通过蚀刻工艺形成毛细管平板。 通过使用扩散限制蚀刻溶液部分地蚀刻波导的上周边层。
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公开(公告)号：KR1020040056554A
公开(公告)日：2004-07-01
申请号：KR1020020083055
申请日：2002-12-24
Applicant: 한국전자통신연구원
IPC: G02B6/12
Abstract: PURPOSE: A method for integrating an active optical device and a passive optical device, and an integrated device thereby are provided to form the active optical device and the passive optical device on one substrate by changing a buried ridge waveguide into a strip loaded waveguide. CONSTITUTION: A taper is formed at an end of a passive waveguide connected to a buried ridge waveguide of an active device in order to change the taper into the strip loaded taper when a center of the buried ridge waveguide of the active device is etched. The taper is covered by a re-growth process. The taper is arranged to the taper formed at an end of the buried ridge waveguide. The strip-loaded waveguide is formed by performing an etching process. An etch-stop layer is inserted in the process for growing the passive waveguide layer in order to form constantly the etching depth.
Abstract translation: 目的：提供一种用于集成有源光学器件和无源光学器件的方法，以及由此提供的集成器件，以通过将掩埋脊形波导变换为条带加载波导来在一个基板上形成有源光学器件和无源光学器件。 构成：当有源器件的埋地脊波导的中心被蚀刻时，锥形形成在连接到有源器件的埋地脊波导的无源波导的端部，以便将锥度改变为带状加载锥度。 锥度由再生长过程覆盖。 锥形布置成形成在埋脊形波导的端部处的锥形。 通过进行蚀刻工艺来形成带状波导管。 在用于生长无源波导层的过程中插入蚀刻停止层，以便不断地形成蚀刻深度。
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