公开(公告)号：DE19547756A1

公开(公告)日：1996-08-22

申请号：DE19547756

申请日：1995-12-20

Applicant: INT RECTIFIER CORP

Inventor： AJIT JANARDHANAN S ,  KINZER DANIEL M

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/78 ,  H01L29/423

公开(公告)号：GB2298086A

公开(公告)日：1996-08-21

申请号：GB9603206

申请日：1996-02-15

Applicant: INT RECTIFIER CORP

Inventor： AJIT JANARDHANAN S ,  KINZER DANIEL M

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/78 ,  H01L21/266

公开(公告)号：IT1248393B

公开(公告)日：1995-01-11

申请号：ITMI911246

申请日：1991-05-08

Applicant: INT RECTIFIER CORP

Inventor： KINZER DANIEL M ,  TAM DAVID

IPC: H02M1/08 ,  G01R29/027 ,  H03K17/16 ,  H03K17/687 ,  H03K19/003 ,  H03K

公开(公告)号：GB2244400B

公开(公告)日：1994-07-06

申请号：GB9110324

申请日：1991-05-13

Applicant: INT RECTIFIER CORP

Inventor： KINZER DANIEL M ,  TAM DAVID

IPC: H02M1/08 ,  G01R29/027 ,  H03K17/16 ,  H03K17/687 ,  H03K19/003

公开(公告)号：DE4114176A1

公开(公告)日：1991-11-28

申请号：DE4114176

申请日：1991-04-30

Applicant: INT RECTIFIER CORP

Inventor： KINZER DANIEL M ,  TAM DAVID

IPC: H02M1/08 ,  G01R29/027 ,  H03K17/16 ,  H03K17/687 ,  H03K19/003

公开(公告)号：GB2154820A

公开(公告)日：1985-09-11

申请号：GB8501283

申请日：1985-01-18

Applicant: INT RECTIFIER CORP

Inventor： KINZER DANIEL M ,  COLLINS HOWARD WILLIAM

IPC: H01L27/06 ,  H01L21/8232 ,  H01L25/07 ,  H01L29/78 ,  H01L29/80 ,  H01L31/10 ,  H01L31/12 ,  H03K17/0412 ,  H03K17/78 ,  H03K17/785 ,  H03K17/04 ,  H01L27/14

Abstract: A high voltage bidirectional output semiconductor field effect transistor (BOSFET) 24 is disclosed which is turned on from the electrical output of a photovoltaic stack 19 which is energized from an LED 21. The process for manufacture of the device is also disclosed. The BOSFET device consists of two lateral field effect transistors 30, 31 formed in an implanted N( - ) region (71) in a P( - ) substrate (70). A diode 35, PNP transistor 36 and resistor 37 are integrated into the same chip containing the lateral BOSFET device to form a solid state relay circuit having characteristics similar to a reed relay. A photovoltaic isolator 20 consists of a stack of semiconductor wafers (320) which are alloyed together by an aluminum silicon alloy foil (43). Each of the wafers consists of a P-type body having P + and N + diffusions on its opposite surfaces. The wafers are stacked with the same forward conduction polarity. Individual photoisolator stacks (345) are sliced from the completed stack to any desired dimension. Each individual stack is mounted with a light source (360), preferably an LED, which is arranged to illuminate the edge of each wafer within the stack.

公开(公告)号：IT8519170D0

公开(公告)日：1985-01-21

申请号：IT1917085

申请日：1985-01-21

Applicant: INT RECTIFIER CORP

Inventor： KINZER DANIEL M ,  COLLINS HOWARD WILLIAM

IPC: H01L27/06 ,  H01L21/8232 ,  H01L25/07 ,  H01L29/78 ,  H01L29/80 ,  H01L31/10 ,  H01L31/12 ,  H03K17/0412 ,  H03K17/78 ,  H03K17/785 ,  H01H

Abstract: The gate capacitance of a Field effect transistor (24) used as a switch is rapidly charged via a diode (35) to turn the FET on, and is rapidly discharged to turn the FET off by a switching transistor (36) connected across the diode and the FET such that it becomes conductive only when the diode becomes reverse biased, thereby providing a discharge path for the gate capacitance. The circuit is used in a photovoltaic relay, the FET being turned on by a photovoltaic isolator (20) having a LED 21 energised by an input signal optically coupled to and dielectrically isolated from a series-connected stack of photo diodes connected to the switching FET, which may comprise a bilateral semiconductor FET (BOSFET).