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    101.
    发明专利
    未知

    公开(公告)号：DE3856278D1

    公开(公告)日：1999-01-14

    申请号：DE3856278

    申请日：1988-03-11

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： IMAI TAKAHIRO ,  FUJIMORI NAOJI ,  NAKAHATA HIDEAKI

    IPC: H01L21/20 ,  H01L21/36 ,  C30B29/04

    Abstract: A thin film single crystal substrate which comprises a base substrate made of single crystal diamond having the (100) or (110) plane orientation, an intermediate layer of single crystal silicon carbide, and at least one thin film of a single crystal of a material selected from the group consisting of silicon, boron nitride, gallium nitride, indium nitride, aluminum nitride, boron phosphide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, cadmium telluride, mercury sulfide, zinc oxide, zinc sulfide, zinc selenide and zinc telluride.

    105.
    发明专利
    未知

    公开(公告)号：DE69125895T2

    公开(公告)日：1997-08-14

    申请号：DE69125895

    申请日：1991-08-13

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： IMAI TAKAHIRO ,  FUJIMORI NAOJI

    IPC: G03F1/22 ,  H01L21/027 ,  G03F1/14

    Abstract: An X-ray lithography mask comprising an X-ray transparent film (1) made from diamond, X-ray absorber patterns (4) deposited on the X-ray transparent film and diamond crosspieces (2) shaped on the diamond X-ray transparent film for reinforcing the diamond X-ray transparent film. Since both the transparent film (1) and the reinforcing crosspieces (2) are made from diamond, no thermal stress is induced by the change of temperature. The mask excels in transmittance for X-ray, flatness and strength.

    108.
    发明专利
    未知

    公开(公告)号：DE69021268D1

    公开(公告)日：1995-09-07

    申请号：DE69021268

    申请日：1990-05-22

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： IMAI TAKAHIRO ,  FUJIMORI NAOJI

    IPC: C30B25/18 ,  C30B25/00 ,  C30B29/04 ,  C30B29/38

    Abstract: Disclosed herein is a method of producing a single crystal of a high-pressure phase material having a pressure region of at least 1000 atm. in an equilibrium state at 25 DEG C. This method is characterized in that a plurality of single-crystalline plates (3, 16) of the high-pressure phase material, being so formed that crystal orientations thereof are substantially equal to each other, are arranged so that single major surfaces (3a) thereof are substantially flush with each other and crystal orientations thereof are substantially along the same direction to define a substrate (1) for serving as a core for vapor-phase growth, and a single-crystalline layer (4) of the high-pressure phase material is formed on the substrate (2) by a vapor-phase synthesis process. According to the inventive method, a single-crystalline layer (4) of the high-pressure phase material is integrally formed on the major surfaces (3a) of the plurality of single-crystalline plates (3, 16) of the high-pressure phase material whose major surfaces (3a) are substantially flush with each other. Thus, it is possible to easily obtain a homogeneous and large-sized single crystal of the high-pressure phase material having a large area.

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