公开(公告)号：CA2760162A1

公开(公告)日：2011-12-09

申请号：CA2760162

申请日：2011-02-21

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SHIOMI HIROMU ,  TAMASO HIDETO ,  HARADA SHIN ,  TSUNO TAKASHI ,  NAMIKAWA YASUO

IPC: H01L29/24 ,  H01L21/20 ,  H01L21/302 ,  H01L29/04

Abstract: The present invention provides a silicon carbide substrate, an epitaxial layer provided substrate. a semiconductor device, and a method for manufacturing the silicon carbide substrate, each of which achieves reduced on-resistance. The silicon carbide substrate (10) is a silicon carbide substrate (10) having a main surface, and includes: a SiC single-crystal substrate (1) formed in at least a portion of the main surface; and a base member (20) disposed to surround the SiC single-crystal substrate (1). The base member (20) includes a boundary region (11) and a base region (12). The boundary region (11) is adjacent to the SiC single-crystal substrate (1) in a direction along the main surface, and has a crystal grain boundary therein. The base region (12) is adjacent to the SiC single-crystal substrate (1) in a direction perpendicular to the main surface, and has an impurity concentration higher than that of the SiC single-crystal substrate (1).

公开(公告)号：DE69709303T2

公开(公告)日：2002-06-13

申请号：DE69709303

申请日：1997-12-04

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TSUNO TAKASHI ,  IMAI TAKAHIRO ,  YOSHIDA KENTARO ,  KUMAZAWA YOSHIAKI

IPC: C30B29/04 ,  C23C16/02 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B25/10 ,  H01J37/32 ,  C30B25/02

Abstract: In a method of synthesizing diamond on a substrate (11) from plasma containing a carbon component, filaments (3) are provided above the substrate (11). The filaments (3) contain tungsten which is a thermoelectron-emitting material. An electrode (4) is provided on a position separating from the filaments (3). The filaments (3) are at least temporarily supplied with a potential relatively higher than that of the substrate (11), while the electrode (4) is at least temporarily supplied with a potential relatively higher than that of the filaments (3). Thus, plasma is generated between the filaments (3) and the substrate (11), while electrons are moved from the filaments (3) to the electrode (4) for generating plasma between the filaments (3) and the electrode (4), thereby forming nuclei of diamond. The potentials of the electron emitters and the electrode are equalized with each other, for growing a film of diamond from the nuclei of diamond.

公开(公告)号：DE69404357T2

公开(公告)日：1998-01-22

申请号：DE69404357

申请日：1994-04-05

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAMOTO YOSHIYUKI ,  IMAI TAKAHIRO ,  TSUNO TAKASHI ,  FUJIMORI NAOJI

IPC: C04B35/584 ,  C04B35/628 ,  C04B35/80 ,  C08K9/02 ,  C22C26/00 ,  C23C16/00 ,  C23C16/01 ,  C23C16/26 ,  C23C16/27 ,  C23C16/56 ,  C22C1/09 ,  C22C29/00

Abstract: An object of the present invention is to provide adhesion or bonding to a matrix in relation to a composite material which is reinforced with vapor-deposited diamond. In order to improve bondability to the matrix, hydrogen is removed from the surface of vapor-deposited diamond fiber. For the removal of hydrogen, the diamond is heated under an oxidative atmosphere at a temperature of about 150 DEG C to about 800 DEG C, or under a non-oxidative atmosphere at a temperature of about 800 DEG C to about 1500 DEG C. The surface of the vapor-deposited diamond containing not more than about 1 x 10 /cm of hydrogen atoms is bonded to the matrix of resin or a metal with sufficient strength. In order to improve bondability to the matrix (1), the surface of diamond (2) is coated with graphite, Al, Si or B, or a carbide or a nitride thereof (3). In order to reinforce bondability, diamond doped with B or N is employed as a reinforcing material. The matrix (1) is prepared from a metal, ceramics or resin.

公开(公告)号：CA2137603A1

公开(公告)日：1995-06-10

申请号：CA2137603

申请日：1994-12-08

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： FUJII SATOSHI ,  TSUNO TAKASHI

IPC: H05B3/14

Abstract: Continual boron-doped diamond parts with ends are formed in a non-doped insulating diamond crystal. Ohmic electrodes are deposited on the ends of the boron-doped continual parts. Non-doped diamond encloses and insulates the boron-doped diamond. When the boron-doped diamond parts are supplied with a current, the boron-doped parts generate Joule's heat. The device acts as a heater. Since the whole is made of diamond crystal, the heater can be sized to extremely small. The heater enjoys high resistance against high temperature, especially in an anaerobic atmosphere. The diamond heater can be adopted in vacuum or in liquid, since the insulating diamond layers are highly resistant against vacuum and liquid.

公开(公告)号：DE69535861D1

公开(公告)日：2008-11-27

申请号：DE69535861

申请日：1995-06-20

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANABE KEIICHIRO ,  SEKI YUICHIRO ,  IKEGAYA AKIHIKO ,  FUJIMORI NAOJI ,  TSUNO TAKASHI

IPC: H01L21/304 ,  C23C16/26 ,  C30B25/02 ,  C30B29/04 ,  H01L21/205

Abstract: No wide bulk diamond wafer exists at present. A wide diamond-coated wafer is proposed instead of the bulk diamond wafer. Diamond is heteroepitaxially deposited on a convex-distorted non-diamond single crystal substrate by a vapor phase deposition method. In an early step, a negative bias is applied to the substrate. In the case of a Si substrate, an intermediate layer of beta -SiC is first deposited on the Si substrate by supplying a low carbon concentration material gas. Then the carbon concentration is raised for making a diamond film. The convex-distorted wafer is stuck to a holder having a shaft which is capable of inclining to the holder. The wafer is pushed to a turn-table of a polishing machine. The convex diamond wafer can fully be polished by inclining the holder to the shaft. A wide distorted mirror wafer of diamond is produced. Fine wire patterns can be made on the diamond mirror wafer by the photolithography.

公开(公告)号：DE69817642T2

公开(公告)日：2004-08-05

申请号：DE69817642

申请日：1998-03-10

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SAITO HIROHISA ,  TSUNO TAKASHI ,  SHIOMI HIROMU ,  KUMAZAWA YOSHIAKI ,  IMAI TAKAHIRO

IPC: H01J1/304 ,  H01J1/30

Abstract: An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a ä100ü face, and the diamond protrusion is surrounded by ä111ü faces.

公开(公告)号：DE69429976D1

公开(公告)日：2002-04-04

申请号：DE69429976

申请日：1994-12-07

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TSUNO TAKASHI ,  FUJI SATOSHI

IPC: H05B3/14

Abstract: Continual boron-doped diamond parts with ends are formed in a non-doped insulating diamond crystal. Ohmic electrodes are deposited on the ends of the boron-doped continual parts. Non-doped diamond encloses and insulates the boron-doped diamond. When the boron-doped diamond parts are supplied with a current, the boron-doped parts generate Joule's heat. The device acts as a heater. Since the whole is made of diamond crystal, the heater can be sized to extremely small. The heater enjoys high resistance against high temperature, especially in an anaerobic atmosphere. The diamond heater can be adopted in vacuum or in liquid, since the insulating diamond layers are highly resistant against vacuum and liquid.

公开(公告)号：CA2137603C

公开(公告)日：1998-05-26

申请号：CA2137603

申请日：1994-12-08

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TSUNO TAKASHI ,  FUJII SATOSHI

IPC: H05B3/14

Abstract: A boron-doped diamond resistance heater is provided herein. Such resistance heater includes at least one continual conductive line with ends, the lines and the ends being made of boron-doped single crystal diamond or polycrystal diamond. Insulat ing parts enclose the conductive lines, the insulating parts being made of non-doped diamond single crystal diamond or polycrystal diamond. Ohmic electrodes are formed on th e ends of said conductive lines. When a voltage is applied between the electrodes, a cu rrent flows in the conductive lines, thereby generating Joule's heat, and the device a cts as a heater. Since the whole device is made of diamond crystal, the heater can be of extremely small size. The heater has a high resistance against high temperature, especially in an anaerobic atmosphere. Moreover, such boron-doped diamond-resist ance heater can be used in vacuum or in a liquid, since the insulating diamond layers are highly resistant against vacuum and liquids.

公开(公告)号：DE69315650D1

公开(公告)日：1998-01-22

申请号：DE69315650

申请日：1993-09-23

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TSUNO TAKASHI ,  IMAI TAKAHIRO ,  FUJIMORI NAOJI

IPC: C30B25/02 ,  C30B25/18 ,  C30B29/04 ,  C23C16/26

Abstract: A plurality of single-crystalline diamond plates (52) having principal surfaces consisting essentially of {100} planes are prepared. The plurality of single-crystalline diamond plates (52) are so arranged that the respective principal surfaces are substantially flush with each other. At this time, an angle formed by crystal orientations in relation to the principal surfaces between adjacent plates (52) is not more than 5 DEG , a clearance between the adjacent plates is not more than 30 mu m, and difference in height in relation to the principal surfaces is not more than 30 mu m between the adjacent plates. In order to fix such a state, it is possible to join the plurality of diamond plates with each other by depositing diamond on these plates. After such joining, the principal surfaces of the diamond plates are polished in order to eliminate steps. Then, diamond is epitaxially grown on a polished surface of a large diamond plate (53) which is formed by the plurality of diamond plates (52) from a vapor phase. In this vapor phase, proportions A, B and C obtained from the following equations I, II and III respectively satisfy the following conditions: 0.5 at 1332 cm in a Raman scattering spectrum.

公开(公告)号：DE112020006524T5

公开(公告)日：2022-12-22

申请号：DE112020006524

申请日：2020-01-16

Applicant: BAYERISCHE MOTOREN WERKE AG ,  SUMITOMO ELECTRIC INDUSTRIES

Inventor： LEGEN CHRISTINA ,  WOELFL GERHARD ,  OOMORI HIROTAKA ,  TANIYAMA MASAKI ,  HATSUKAWA SATOSHI ,  TSUNO TAKASHI

IPC: H01L23/498 ,  H01L25/07 ,  H01L25/18

Abstract: Ein Halbleitermodul enthält ein Basiselement; eine Leiterplatte, die auf dem Basiselement vorgesehen ist und ein positives Elektrodenpad, ein negatives Elektrodenpad und Halbleitervorrichtungen enthält; ein Gehäuse, das in einer Rahmenform ausgebildet und an dem Basiselement befestigt ist; eine erste Elektrodenplatte, die elektrisch mit dem positiven Elektrodenpad verbunden ist und einen ersten flachen Plattenabschnitt aufweist; eine zweite Elektrodenplatte, die elektrisch mit dem negativen Elektrodenpad verbunden ist und einen zweiten flachen Plattenabschnitt aufweist; und ein erstes Isolierelement. Der erste flache Plattenabschnitt und der zweite flache Plattenabschnitt sind parallel von der Innenseite zur Außenseite des Gehäuses angeordnet. Der erste flache Plattenabschnitt hat einen ersten externen Verbindungsanschluss, der sich außerhalb des Gehäuses befindet, und der zweite flache Plattenabschnitt hat einen zweiten externen Verbindungsanschluss, der sich außerhalb des Gehäuses befindet. Das erste Isolierelement befindet sich zwischen dem ersten und dem zweiten externen Verbindungsanschluss.