Abstract:
A micro electromechanical (MEMS) switch suitable for use in medical devices is provided, along with methods of producing and using MEMS switches. In one aspect, a micro electromechanical switch including a moveable member configured to electrically cooperate with a receiving terminal is formed on a substrate. The moveable member and the receiving terminal each include an insulating layer proximate to the substrate and a conducting layer proximate to the insulating layer opposite the substrate. In various embodiments, the conducting layers of the moveable member and/or receiving terminal include a protruding region that extends outward from the substrate to switchably couple the conducting layers of the moveable member and the receiving terminal to thereby form a switch. The switch may be actuated using, for example, electrostatic energy.
Abstract:
A plurality of electronic circuits and associated signal lines are positioned at respective locations on a base wafer. A cover wafer, which fits over the base wafer, includes a corresponding like number of locations each including one or more cavities to accommodate the electronic circuit and associated signal lines. The cover wafer includes a plurality of vias for making electrical connection to the signal lines. A multi layer metallic arrangement hermetically seals the periphery of each location as well as sealing the bottom of each via. The joined base and cover wafers may then be diced to form individual die packages.
Abstract:
A microelectronic mechanical system (MEMS) switch includes a vane (122) formed over a substrate for electrically coupling an input line (102) to an output line (104) formed on the substrate. The vane includes flexible hinges (126), which support the vane from the input line and allow the vane to rotate about a pivot axis. The substrate includes pull-down (112) and pull-back (110) electrodes to actuate the MEMS switch. The pull-back electrode allows the present invention to overcome stiction effects.
Abstract:
A MEMS device (400) and method of making same is disclosed. In one embodiment, a micro-switch includes a base assembly (220) comprising a movable structure (230) bearing a contact pad (234). The base assembly (220) is wafer-scale bonded to a lid assembly (202) comprising an activator (210), and a signal path. The movable structure (230) moves within a sealed cavity (238) formed during the bonding process. The signal path includes an input line (300) and an output line (302) separated by a gap (308), which prevent signals from propagating through the micro-switch (400) when the switch (400) is deactivated. In operation, a signal is launched into the signal path. When the micro-switch (400) is activated, a force (402) is established by the actuator (210), which pulls a portion of the movable structure (230) upwards towards the gap (308) in the signal path, until the contact pad (234) bridges the gap between the input line (300) and output line (302), allowing the signal to propagate through the micro-switch (400). Prior to bonding, the MEMS structures are annealed on a first wafer and the conductive traces and other metals are annealed on a second wafer to allow each wafer to be processed separately using different processes, e.g., different annealing temperatures.
Abstract:
A microelectronic mechanical systems (MEMS) switch includes a vane formed over a substrate for electrically coupling an input line to an output line formed on the substrate. The vane includes flexible hinges, which support the vane from the input line and allow the vane to rotate about a pivot axis. The substrate includes pull-down and pull-back electrodes to actuate the MEMS switch. The pull-back electrode allows the present invention to overcome stiction effects.
Abstract:
The present invention includes the step of forming a lower electrode pattern on a substrate; the step of forming a first interlayer insulation layer on the lower electrode pattern; the step of forming an upper electrode pattern on the first interlayer insulation layer; the step of forming a second interlayer insulation layer on the upper electrode pattern; the step of forming a wet etching blocking layer positioned at the side surface by penetrating the first interlayer insulation layer; the step of forming a cavity exposing the side surface of the wet etching blocking layer by wet etching the second interlayer insulation layer; and the step of forming a contact ball in the cavity.
Abstract:
본 발명은, 기판 표면의 일부에 레지스트를 형성하는 공정과, 레지스트가 형성된 후에 기판 표면 위에 금속층을 형성하는 공정과, 금속층의 일부를 제거하는 공정과, 금속층의 일부를 제거함으로써 금속층 표면에 생긴 금속산화막을 제거하는 공정과, 레지스트를 제거하는 공정을 포함하는, 전기부품의 표면에 있어서의 접촉저항을 저하시킬 수 있는 전기부품의 제조방법을 제공하는 것을 특징으로 한 것이다.