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公开(公告)号：US20130029157A1
公开(公告)日：2013-01-31
申请号：US13386049
申请日：2010-07-20
Applicant: Nakis Karapatis
Inventor： Nakis Karapatis
CPC classification number: B81C1/00682 , B81B2201/035 , B81C1/00674 , B81C2201/0178 , Y10T29/49986
Abstract: A method of fabricating a reinforced silicon micromechanical part includes: micromachining the part, or a batch of parts in a silicon wafer; forming a silicon dioxide layer over the entire surface of the part, in one or plural operations, so as to obtain a thickness of silicon dioxide that is at least five times greater than the thickness of native silicon dioxide; and removing the silicon dioxide layer by etching.
Abstract translation: 制造增强硅微机械部件的方法包括：在硅晶片中微加工所述部件或一批部件; 在一个或多个操作中在整个表面上形成二氧化硅层，以获得比天然二氧化硅的厚度大至少五倍的二氧化硅的厚度; 并通过蚀刻去除二氧化硅层。
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公开(公告)号：US08057882B2
公开(公告)日：2011-11-15
申请号：US12225670
申请日：2007-03-28
Applicant: Takayuki Hirano , Nobuyuki Kawakami , Masato Kannaka
Inventor： Takayuki Hirano , Nobuyuki Kawakami , Masato Kannaka
CPC classification number: G01F1/692 , B81B2201/0278 , B81B2203/0127 , B81C1/00666 , B81C2201/0169 , B81C2201/0178 , C23C16/402 , C23C16/56 , Y10T428/24488 , Y10T428/24612
Abstract: It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film 13 formed on the substrate 1; and a removal step of removing a part of the substrate 2 in such a manner that a membrane-corresponding part of the silicon oxide film 13 is supported as a membrane in a hollow state with respect to the substrate 2 to form a recessed part 4.
Abstract translation: 本发明提供可以容易地制造，具有优异的绝缘性和高质量的膜结构元件; 和膜结构元件的制造方法。 该制造方法是用于制造包括由氧化硅膜形成的膜的膜结构元件和通过支撑膜的周边的一部分而将膜支撑在中空状态的基板。 该方法包括：通过等离子体CVD法在硅衬底2的表面上形成热收缩氧化硅膜13的成膜步骤; 对形成在基板1上的氧化硅膜13的热收缩进行热处理的热处理工序; 以及去除基板2的一部分的去除步骤，使得氧化硅膜13的膜相应部分作为相对于基板2的中空状态的膜被支撑以形成凹部4。
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公开(公告)号：US20110001582A1
公开(公告)日：2011-01-06
申请号：US12918222
申请日：2009-02-09
Applicant: Hironori Nagasaki
Inventor： Hironori Nagasaki
CPC classification number: H03H3/0072 , B81B2201/0271 , B81B2203/0118 , B81B2203/033 , B81B2203/04 , B81C1/00182 , B81C2201/0178 , H01G5/16 , H03H9/2463 , H03H2009/02496 , Y10T29/49002
Abstract: A micro-electromechanical device of the present invention includes a resonator and an electrode facing each other, a pair of thermal oxide film formed on the surfaces of the resonator and electrode facing each other and a narrow gap provided between the thermal oxide films. A process for fabricating a micro-electromechanical device includes a step of processing an Si layer to be the resonator and the electrode by using photolithography and etching to form a groove to be a gap, and a step of performing thermal oxidation on the Si layer to form a pair of thermal oxide films of Si on the opposite surfaces of the groove.
Abstract translation: 本发明的微电子机电装置包括谐振器和彼此面对的电极，形成在谐振器和彼此面对的电极的表面上的一对热氧化膜以及设置在热氧化膜之间的窄间隙。 微机电器件的制造方法包括以下步骤：通过使用光刻法和蚀刻法形成作为间隙的沟槽来处理作为谐振器的Si层和电极，以及在Si层上进行热氧化的步骤 在槽的相对表面上形成一对Si的热氧化膜。
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公开(公告)号：US07833405B2
公开(公告)日：2010-11-16
申请号：US10450362
申请日：2001-12-13
Applicant: Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaeffer
Inventor： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaeffer
CPC classification number: B81C1/00182 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C2201/0114 , B81C2201/0115 , B81C2201/0178
Abstract: A micromechanical component is described which includes a substrate; a monocrystalline layer, which is provided above the substrate and which has a membrane area; a cavity that is provided underneath the membrane area; and one or more porous areas, which are provided inside the monocrystalline layer and which have a doping that is higher than that of the surrounding layer.
Abstract translation: 描述了一种微机械部件，其包括基板; 单晶层，其设置在基板上方并具有膜面积; 设置在膜区域下方的空腔; 以及一个或多个多孔区域，其设置在单晶层内部并且具有高于周围层的掺杂。
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公开(公告)号：US20060121735A1
公开(公告)日：2006-06-08
申请号：US10527789
申请日：2003-09-12
Applicant: Matthias Aikele , Albert Engelhardt , Marcus Frey , Bernhard Hartmann , Helmut Seidel
Inventor： Matthias Aikele , Albert Engelhardt , Marcus Frey , Bernhard Hartmann , Helmut Seidel
IPC: H01L21/302 , H01L21/461
CPC classification number: B81C1/00698 , B81B2201/0235 , B81B2203/033 , B81C2201/0178
Abstract: The invention relates to processes for the formation of isolation structures for micro-machined sensors in single-crystal surface technology. In known processes, silicon structures defined by deep trenches are etched and uncovered by a “release etch” step also at their bottom surface towards the substrate. The subsequent lining of these trenches with a non-conducting insulating material, such as silicon dioxide leads to a firm anchoring by means of a surrounding of the silicon structure with the lined trenches on three sides, leaving one side uncovered. It is the main idea of the invention—instead of lining the trenches—to convert thin-walled silicon into an electrically non-conducting material. This can, for instance, be accomplished by means of a thermal oxidation of narrow silicon ribs released prior thereto by trenches. In the minimal configuration, two trenches (holes) per rib with the required structure depth must be etched for this purpose. The silicon rib between them must be narrow enough to permit its complete thermal through oxidation.
Abstract translation: 本发明涉及用于在单晶表面技术中形成用于微加工传感器的隔离结构的方法。 在已知的工艺中，由深沟槽限定的硅结构通过在其底表面朝向衬底的“释放蚀刻”步骤被蚀刻和未覆盖。 这些具有非导电绝缘材料（例如二氧化硅）的这些沟槽的后续衬里导致通过硅结构的周围与三面沟槽在三面上的牢固锚定，留下一侧未覆盖。 本发明的主要思想是将薄壁硅转化为非导电材料，而不是将沟槽衬里。 这可以例如通过在其之前通过沟槽释放的窄硅肋的热氧化来实现。 在最小的构造中，为了这个目的，必须蚀刻每个具有所需结构深度的肋的两个沟槽（孔）。 它们之间的硅筋必须足够窄以使其完全通过热氧化。
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Patent Agency Ranking
公开(公告)号：US06758983B2
公开(公告)日：2004-07-06
申请号：US10076296
申请日：2002-02-13
Applicant: Robert A. Conant , Jocelyn T. Nee , Kam-Yin Lau , Richard S. Muller
Inventor： Robert A. Conant , Jocelyn T. Nee , Kam-Yin Lau , Richard S. Muller
IPC: H01L2100
CPC classification number: B81C1/00182 , B81B2201/042 , B81B2203/0136 , B81C2201/0178 , B81C2203/032 , G02B26/0841
Abstract: A staggered torsional electrostatic combdrive includes a stationary combteeth assembly and a moving combteeth assembly with a mirror and a torsional hinge. The moving combteeth assembly is positioned entirely above the stationary combteeth assembly by a predetermined vertical displacement during a combdrive resting state. A method of fabricating the staggered torsional electrostatic combdrive includes the step of deep trench etching a stationary combteeth assembly in a first wafer. A second wafer is bonded to the first wafer to form a sandwich including the first wafer, an oxide layer, and the second wafer. A moving combteeth assembly is formed in the second wafer. The moving combteeth assembly includes a mirror and a torsional hinge. The moving combteeth assembly is separated from the first wafer by the oxide layer. The oxide layer is subsequently removed to release the staggered torsional electrostatic combdrive.
Abstract translation: 交错的扭转静电梳状驱动器包括固定的组合组件和具有反射镜和扭转铰链的移动梳状组件。 移动的组合组件在梳齿装置静止状态期间完全位于固定组合组件上方预定的垂直位移。 制造交错扭转静电梳齿驱动器的方法包括在第一晶片中深沟槽蚀刻静止梳组件的步骤。 第二晶片结合到第一晶片以形成包括第一晶片，氧化物层和第二晶片的夹层。 在第二晶片中形成移动的组合组件。 移动的组合组件包括反射镜和扭转铰链。 移动的组合组件通过氧化物层与第一晶片分离。 随后去除氧化物层以释放交错的扭转静电梳状驱动。
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公开(公告)号：US20040080004A1
公开(公告)日：2004-04-29
申请号：US10450362
申请日：2003-11-12
Inventor： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaefer
IPC: H01L027/14
CPC classification number: B81C1/00182 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C2201/0114 , B81C2201/0115 , B81C2201/0178
Abstract: A micromechanical component is described which includes a substrate (1); a monocrystalline layer (10), which is provided above the substrate (1) and which has a membrane area (10a); a cavity (50) that is provided underneath the membrane area (10a); and one or more porous areas (150; 150null), which are provided inside the monocrystalline layer (10) and which have a doping (nnull; pnull) that is higher than that of the surrounding layer (10).
Abstract translation: 描述了一种微机械部件，其包括基板（1）; 单晶层（10），其设置在所述基板（1）的上方，并且具有膜区域（10a）; 设置在膜区域（10a）下方的空腔（50）; 以及一个或多个多孔区域（150; 150'），其设置在单晶层（10）的内部并且具有比周围层（10）的掺杂（n +; p +）更高的掺杂 ）。
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公开(公告)号：US06565765B1
公开(公告)日：2003-05-20
申请号：US09598543
申请日：2000-06-21
Applicant: Heribert Weber
Inventor： Heribert Weber
IPC: B44C122
CPC classification number: B81C1/00158 , B81C2201/014 , B81C2201/0178 , G01F1/6845
Abstract: In a method for manufacturing a sensor having a membrane, a silicon nitride layer is deposited on the upper side of a silicon substrate. For that, an LPCVD or PECVD process is used. From the lower side of the silicon substrate, an opening is etched in which ends at the lower side of the silicon nitride layer.
Abstract translation: 在制造具有膜的传感器的方法中，在硅衬底的上侧淀积氮化硅层。 为此，使用LPCVD或PECVD工艺。 从硅衬底的下侧开始，在氮化硅层的下侧蚀刻开口。
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109.发明申请Actuator and micromirror for fast beam steering and method of fabricating the same 审中-公开用于快速光束转向的致动器和微镜及其制造方法公开(公告)号：US20020008922A1
公开(公告)日：2002-01-24
申请号：US09769965
申请日：2001-01-24
Inventor： Robert A. Conant , Jocelyn T. Nee , Kam-Yin Lau
IPC: G02B007/182
CPC classification number: B81C1/00658 , B81B2201/033 , B81B2201/042 , B81B2203/0136 , B81C1/00182 , B81C2201/0178 , B81C2203/032 , G02B26/0841
Abstract: A micromirror for fast beam steering and method of fabricating the same. The micromirror of the present invention is lightweight and optically flat, and includes a tensile membrane that is stretched under high tension across a rigid single-crystal silicon support rib structure. A thin layer of gold may be deposited on the polysilicon membrane to improve reflectivity. The tensile stress in the membrane gives the micromirror a very high resonant frequency, thereby allowing the mirror to be scanned at high frequencies without exciting resonant nodes that may compromise the flatness of the optical surface and ruin its optical properties. The tensile stress also causes the optical surface to be stretched flat. The micromirror of the present invention may be actuated by a staggered torsional electrostatic combdrive.
Abstract translation: 一种用于快速光束转向的微镜及其制造方法。 本发明的微反射镜重量轻且光学平坦，并且包括在高刚性单晶硅支撑肋结构上拉伸的拉伸膜。 可以在多晶硅膜上沉积薄的金层以提高反射率。 膜中的拉伸应力使微镜具有非常高的谐振频率，从而允许在高频下扫描反射镜，而不激励谐振节点，这可能损害光学表面的平坦度并破坏其光学性质。 拉伸应力也使得光学表面被拉平。 本发明的微反射镜可以由交错的扭转静电梳形驱动器驱动。
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公开(公告)号：US20240182291A1
公开(公告)日：2024-06-06
申请号：US18437338
申请日：2024-02-09
Applicant: HITACHI, LTD.
Inventor： Shun Kumano , Hideki Hasegawa , Masuyuki Suguyama
CPC classification number: B81B3/0072 , B81C1/00666 , H04N23/54 , H04N23/687 , B81B2203/0118 , B81B2203/019 , B81B2203/0307 , B81C2201/0105 , B81C2201/0178 , G02B7/021
Abstract: The present invention is characterized by involving a light source irradiating the inside of an ion source with light, a camera acquiring intensity as information of scattered light by droplets generated by electrospraying, and a processing device storing, in a storage unit, determination reference information indicating a relationship between a parameter of a channel system of a liquid chromatography device and the intensity, in which the processing device executes: acquiring the intensity from the camera; comparing the acquired intensity with the determination reference information; and determining a failure of a channel system in the liquid chromatography device by detecting a change in the scattered light relative to a value of the determination reference information based on the acquired intensity by comparing the acquired intensity with the determination reference information.
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