公开(公告)号：US20090026944A1

公开(公告)日：2009-01-29

申请号：US11782070

申请日：2007-07-24

Applicant: Lionel J. Riviere-Cazaux

Inventor： Lionel J. Riviere-Cazaux

IPC: H01J3/00 ,  H01J1/62 ,  H01J9/02

CPC classification number: H01J3/022 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/3195 ,  H01J2329/0423 ,  H01J2329/0497

Abstract: A method for making a field emission cathode structure includes forming a ballast layer over a column metal layer, forming a dielectric layer over the ballast layer, forming a line metal layer over the dielectric layer, forming a trench in the line metal layer and the dielectric layer, the trench extending to the ballast layer, and forming a sidewall spacer and a sidewall blade adjacent a sidewall of the trench, where the sidewall spacer is between the dielectric layer and the sidewall blade, and where the conformal spacer is recessed as compared to the sidewall blade such that a gap is present between the sidewall blade and the line metal layer.

Abstract translation: 一种制造场致发射阴极结构的方法包括在柱金属层上形成压载层，在镇流器层上形成电介质层，在电介质层上形成线金属层，在线金属层和电介质中形成沟槽 层，沟槽延伸到镇流器层，以及邻近沟槽的侧壁形成侧壁间隔件和侧壁叶片，其中侧壁间隔物位于介电层和侧壁叶片之间，并且其中保形间隔件相对于凹槽 侧壁叶片使得在侧壁叶片和线金属层之间存在间隙。

公开(公告)号：US06674242B2

公开(公告)日：2004-01-06

申请号：US10102450

申请日：2002-03-20

Applicant: Alexander Kastalsky ,  Sergey Shokhor ,  Frank J. DiSanto ,  Denis A. Krusos ,  Boris Gorfinkel ,  Nikolai Abanshin

Inventor： Alexander Kastalsky ,  Sergey Shokhor ,  Frank J. DiSanto ,  Denis A. Krusos ,  Boris Gorfinkel ,  Nikolai Abanshin

IPC: G09G310

CPC classification number: H01J9/025 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423

Abstract: A Reflective Field Emission Display (FED) system using reflective field emission pixel elements is disclosed. In the FED system disclosed, each pixel elements is composed of at least one edge emitter that is operable to emit electrons and at least one reflector that is operable to first attract and then reflect the emitted electrons onto a transparent layer that is operable to attract the reflected electrons. The transparent anode layer is oppositely positioned with respect to the cathode or emitter edge. In a one aspect of the invention, a phosphor layer interposed between the transparent layer and the pixel element produces a light photon as reflected electrons are attracted to the transparent layer. In another aspect of the invention, a plurality of phosphor layers are applied to the transparent layer to produce a color display when reflected electrons are attracted to the transparent layer.

Abstract translation: 公开了使用反射场发射像素元件的反射场发射显示（FED）系统。 在所公开的FED系统中，每个像素元件由可操作以发射电子的至少一个边缘发射器和至少一个反射器组成，该至少一个反射器可操作以首先吸引然后将发射的电子反射到透明层上，该透明层可操作以吸引 反射电子。 透明阳极层相对于阴极或发射极边缘相对定位。 在本发明的一个方面中，当反射的电子被透明层吸引时，介于透明层和像素元件之间的磷光体层产生光子。 在本发明的另一方面，当反射电子被吸引到透明层时，多个磷光体层被施加到透明层以产生彩色显示。

公开(公告)号：US20020135284A1

公开(公告)日：2002-09-26

申请号：US10102467

申请日：2002-03-20

Inventor： Alexander Kastalsky ,  Sergey Shokhor ,  Frank J. DiSanto ,  Denis A. Krusos ,  Boris Gorfinkel ,  Nikolai Abanshin

IPC: H01J001/00

CPC classification number: H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30423

Abstract: A Reflective Field Emission Display system, components and methods for fabricating the components is disclosed. In the FED system disclosed, a plurality of reflective edge emission pixel elements are arranged in a matrix of N rows and M columns, the pixel elements contain an edge emitter that is operable to emit electrons and a reflector that is operable to extract and laterally reflect emitted electrons. A collector layer, laterally disposed from said reflector layer is operable to attract the reflected electrons. Deposited on the collector layer is a phosphor layer that emits a photon of a known wavelength when activated by an attracted electron. A transparent layer that is oppositely positioned with respect to the pixel elements is operable to attract reflected electrons and prevent reflected electrons from striking the phosphor layer. Color displays are further contemplated by incorporating individually controlled sub-pixel elements in each of the pixel elements. The phosphor layers emit photons having wavelengths in the red, green or blue color spectrum.

Abstract translation: 公开了一种反射场发射显示系统，用于制造组件的部件和方法。 在所公开的FED系统中，多个反射边缘发射像素元件以N行和M列的矩阵排列，像素元件包含可操作以发射电子的边缘发射器和可操作以提取和横向反射的反射器 发射电子。 从所述反射器层横向设置的集电极层可操作以吸引反射的电子。 沉积在集电极层上的是当被吸引的电子激活时发射已知波长的光子的磷光体层。 相对于像素元件相对定位的透明层可操作以吸引反射的电子并防止反射的电子撞击荧光体层。 通过在每个像素元件中并入单独控制的子像素元件，进一步考虑了彩色显示器。 荧光体层发射具有红色，绿色或蓝色光谱波长的光子。

公开(公告)号：US5618216C1

公开(公告)日：2001-06-26

申请号：US45903395

申请日：1995-06-02

Applicant: ADVANCED VISION TECH INC

Inventor： POTTER MICHAEL D

IPC: H01J9/39 ,  H01J1/304 ,  H01J3/02 ,  H01J7/18 ,  H01J9/02 ,  H01J9/40

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30423 ,  H01J2209/385

公开(公告)号：US06168491A

公开(公告)日：2001-01-02

申请号：US09448905

申请日：1999-11-29

Applicant: David S. Y. Hsu ,  Henry F. Gray

Inventor： David S. Y. Hsu ,  Henry F. Gray

IPC: H01J902

CPC classification number: H01J9/025 ,  H01J2201/30423

Abstract: A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.

Abstract translation: 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射体是包含夹在两个保护层之间的低功函数材料的多层结构。 场发射器可以由包括导电衬底层，绝缘层，支座层和栅极层的复合起始结构制成，其中穿孔从栅极层延伸到衬底层中。 发射体材料通过化学束沉积沿着穿孔的侧壁共形沉积。 或者，起始材料可以是其上具有突起的导电基底。 顺序地沉积发射极层，隔离层，绝缘层和栅极层，并且优先除去其中不需要的部分以提供所需的结构。

公开(公告)号：US6017257A

公开(公告)日：2000-01-25

申请号：US990887

申请日：1997-12-15

Applicant: Michael D Potter

Inventor： Michael D Potter

IPC: H01J29/94 ,  H01J9/00

CPC classification number: H01J29/94 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A self-gettering electron field emitter has a first portion formed of a low-work-function material for emitting electrons, and it has an integral second portion that acts both as a low-resistance electrical conductor and as a gettering surface. The self-gettering emitter is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance gettering material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-gettering emitter is particularly suitable for use in lateral field emission devices. The preferred emitter structure has a tapered edge, with a salient portion of the low-work-function material extending a small distance beyond an edge of the gettering and low resistance material. A fabrication process specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices is also disclosed.

Abstract translation: 自吸电子场发射器具有由用于发射电子的低功函数材料形成的第一部分，并且其具有作为低电阻电导体和吸气表面的整体第二部分。 自吸收发射体通过将低功函数材料的薄膜平行于衬底设置并且将低电阻吸气材料的薄膜平行于衬底设置并与薄膜接触而形成 低功能材料。 自吸式发射器特别适用于横向场发射装置。 优选的发射极结构具有锥形边缘，低功函数材料的显着部分在吸气和低电阻材料的边缘之外延伸一小段距离。 还公开了专门用于在制造微电子场发射器件的同时形成自吸电子场发射体的制造工艺。

公开(公告)号：US5982081A

公开(公告)日：1999-11-09

申请号：US759678

申请日：1996-12-06

Applicant: Johnny Kin On Sin ,  Bao Ping Wang

Inventor： Johnny Kin On Sin ,  Bao Ping Wang

IPC: H01J3/02 ,  H01J1/46 ,  H01J19/14 ,  H01J21/10

CPC classification number: H01J29/467 ,  H01J3/022 ,  H01J31/127 ,  H01J2201/30423

Abstract: Field emitter structures are described for use in arrays forming field emission displays. The field emitter structures may be either single or perferably double-gate structures. To enhance the field emission current density the emitters are formed so as to be elongate so as to form a race-track shape. The emitter layer may also be provided with sharply defined edges in order to improve electron emission.

Abstract translation: 描述场发射器结构用于形成场发射显示器的阵列。 场发射器结构可以是单栅极或优选的双栅极结构。 为了增强场发射电流密度，发射体形成为细长的，以形成赛道形状。 为了改善电子发射，发射极层也可以设置有锐利的边缘。

公开(公告)号：US5874808A

公开(公告)日：1999-02-23

申请号：US916370

申请日：1997-08-21

Applicant: Heinz H. Busta ,  Jay E. Pogemiller

Inventor： Heinz H. Busta ,  Jay E. Pogemiller

IPC: H01J3/02 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J2201/30423

Abstract: A low turn-on voltage volcano-shaped field emitter, a method of fabrication, and integration into an addressable array suitable for applications in field emitter displays and other electron generating applications are disclosed. In one embodiment, the device is fabricated using a stepped insulator in which the distance between the gate and the emitter near the emission surface is significantly reduced with respect to the thickness of the insulator and separates the gate from the emitter. By keeping the large gate-to-emitter distance, the device capacitance is reduced and fabrication yield is increased, since pinholes in the insulator are significantly reduced. In another embodiment of the present invention, the integration of the device into an addressable array suitable for electron emission is described. The array incorporates a network of resistors which assures uniform emission.

Abstract translation: 公开了一种低导通电压火山形场发射器，制造方法以及集成到适用于场致发射显示器和其它电子发生应用中的可寻址阵列。 在一个实施例中，使用阶梯式绝缘体制造器件，其中相对于绝缘体的厚度，在发射表面附近的栅极和发射极之间的距离显着减小，并且将栅极与发射极分离。 通过保持大的栅 - 发射极距离，由于绝缘体中的针孔显着减小，器件电容减小并且制造成品率增加。 在本发明的另一实施例中，描述了将器件集成到适用于电子发射的寻址阵列中。 该阵列包含一个确保均匀发射的电阻网络。

公开(公告)号：US5848925A

公开(公告)日：1998-12-15

申请号：US773121

申请日：1996-12-26

Applicant: Emmett Howard ,  Curtis D. Moyer ,  James E. Jaskie

Inventor： Emmett Howard ,  Curtis D. Moyer ,  James E. Jaskie

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A method for fabricating an array (300) of edge electron emitters (530) includes the steps of: forming first and second grooves (310, 320) in first and second opposing planar surfaces (101, 102), respectively, of a supporting substrate (110) to form an array of openings (330) therethrough; forming a dielectric layer (122) on the first planar surface (101) and an emission structure (120) on the dielectric layer (122); forming a plurality of cathodes (132) on the emission structure (120); forming gates (515) on a portion of the surfaces defining the first grooves (310); forming a masking film (710) on the cathodes (132)/emission structure (120); removing an outer, radial portion (726) of the masking film (710); etching the emission structure (120), the retracted masking film (710) forming a mask, thereby providing a predetermined configuration of the edge electron emitters (530) with respect to the gates (515) and cathodes (132).

Abstract translation: 一种用于制造边缘电子发射器（530）的阵列（300）的方法包括以下步骤：分别在支撑衬底的第一和第二相对的平坦表面（101,102）中形成第一和第二凹槽（310,320） （110）以形成穿过其中的开口阵列（330）; 在所述第一平坦表面（101）上形成介电层（122）和所述电介质层（122）上的发射结构（120）; 在所述发射结构（120）上形成多个阴极（132）; 在限定第一凹槽（310）的表面的一部分上形成浇口（515）; 在阴极（132）/发射结构（120）上形成掩模膜（710）; 去除所述掩蔽膜（710）的外径向部分（726）; 蚀刻发射结构（120），缩回的掩模膜（710）形成掩模，从而相对于栅极（515）和阴极（132）提供边缘电子发射器（530）的预定配置。

公开(公告)号：US5616061A

公开(公告)日：1997-04-01

申请号：US498507

申请日：1995-07-05

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J9/02 ,  H01J31/12 ,  H01J1/53

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A lateral-emitter electron field-emission display device structure incorporates a thin-film emitter having an emitting edge and extending into in direct contact with a non-conducting or very high resistivity phosphor, thereby eliminating the gap between the emitter and the phosphor. Such a gap has been a part of all field-emission display devices in the prior art. The ultra-thin-film lateral emitter of the new structure is deposited in a plane parallel to the device's substrate and has an inherently small radius of curvature at its emitting edge. A fabrication process specially adapted to make the new structure includes a directional trench etch, which both defines the emitting edge and provides an opening to receive a non-conducting phosphor. This phosphor covers an anode and is automatically aligned in contact with the emitter edge. When an electrical bias voltage is applied between the emitter and anode, electrons are injected directly into the phosphor material from the emitter edge, exciting cathodoluminescence in the phosphor to emit light which is visible in a wide range of viewing angles. With minor variations in the fabrication process, a lateral-emitter electron field emission display device may be made with an extremely small emitter-phosphor gap, having a width less than 100 times the thickness of the ultra-thin emitter. Embodiments in which the gap width is zero are characterized as edge-contact light-emitting diodes (or triodes or tetrodes if they include control electrodes).

Abstract translation: 横向发射极电子场发射显示器件结构包括具有发射边缘并延伸成与非导电或非常高电阻率的磷光体直接接触的薄膜发射器，从而消除了发射极和磷光体之间的间隙。 这样的间隙已经是现有技术中的所有场致发射显示装置的一部分。 新结构的超薄膜横向发射体沉积在平行于器件的衬底的平面中，并且在其发射边缘处具有固有的小的曲率半径。 专门用于制造新结构的制造工艺包括定向沟槽蚀刻，其定义了发射边缘并且提供用于接收非导电磷光体的开口。 该荧光体覆盖阳极并自动对准与发射极边缘接触。 当在发射极和阳极之间施加电偏压时，电子从发射极边缘直接注入到荧光体材料中，激发荧光体中的阴极发光，发射在宽视角范围内可见的光。 在制造工艺中有微小变化的情况下，横向发射极电子场发射显示装置可以制造成具有极小的发射 - 磷光体间隙，其宽度小于超薄发射极的厚度的100倍。 间隙宽度为零的实施例的特征在于边缘接触式发光二极管（或三极管或四极管，如果它们包括控制电极）。