公开(公告)号：US20040263050A1

公开(公告)日：2004-12-30

申请号：US10815718

申请日：2004-04-02

Applicant: THALES

Inventor： Andre Gabioud ,  Michel Langlois

IPC: H01J001/00 ,  H01J029/46

CPC classification number: H01J25/04 ,  H01J1/46 ,  H01J3/027 ,  H01J23/07 ,  H01J37/065

Abstract: In a control grid for an electron tube, the grid has first bars that are evenly spaced out on a skewed surface and extend substantially as circle pseudo-involutes about a central hub.

公开(公告)号：US20040245905A1

公开(公告)日：2004-12-09

申请号：US10886641

申请日：2004-07-09

Applicant: CANNON KABUSHIKI KAISHA

Inventor： Toshiaki Aiba ,  Masato Yamanobe ,  Taiko Motoi ,  Rie Ueno ,  Kumi Nakamura ,  Masaaki Shibata

IPC: H01J001/14 ,  H01J001/00

CPC classification number: H01J1/316

Abstract: An electron-emitting device includes a substrate, first and second carbon films disposed so as to have a first gap between the first and second carbon films on a surface of the substrate, and first and second electrodes electrically connected with the first and the second carbon films respectively, wherein the carbon film has a region showing orientation, and a direction of the orientation is in an approximately parallel direction along the substrate surface. Thereby, it is possible to improve thermal and chemical stability of a carbon film and stabilize good electron emission characteristics over a long period.

Abstract translation: 一种电子发射器件，包括：衬底，第一和第二碳膜，其被设置为在衬底的表面上在第一和第二碳膜之间具有第一间隙，以及与第一和第二碳电连接的第一和第二电极 其中所述碳膜具有显示取向的区域，并且所述取向的方向沿着所述基板表面大致平行。 因此，可以提高碳膜的热稳定性和化学稳定性，并且能够长时间稳定良好的电子发射特性。

公开(公告)号：US20040085010A1

公开(公告)日：2004-05-06

申请号：US10405897

申请日：2003-04-02

Applicant: NGK Insulators, Ltd.

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Nobuyuki Kokune

IPC: H01J001/00

CPC classification number: G09G3/22 ,  G09G3/2011 ,  G09G2300/0439 ,  G09G2310/06 ,  G09G2320/043 ,  G09G2330/04 ,  H01J1/304 ,  H01J1/316 ,  H01J2329/00

Abstract: An electron emitter has an electric field receiving member formed on a substrate, a drive electrode formed on one surface of the electric field receiving member, and a common electrode formed on the one surface of the electric field receiving member, with a slit defined between the drive electrode and the common electrode. The drive electrode is supplied with a drive signal from a pulse generation source, and the common electrode is connected to a common potential generation source (GND in the illustrated embodiment). The slit has a width d in the range from 0.1 nullm to 50 nullm.

Abstract translation: 电子发射器具有形成在基板上的电场接收部件，形成在电场接收部件的一个表面上的驱动电极和形成在电场接收部件的一个表面上的公共电极， 驱动电极和公共电极。 向驱动电极提供来自脉冲发生源的驱动信号，并且公共电极连接到公共电位产生源（在所示实施例中为GND）。 狭缝的宽度d在0.1μm至50μm的范围内。

公开(公告)号：US20030197457A1

公开(公告)日：2003-10-23

申请号：US10438070

申请日：2003-05-15

Applicant: MATSUSHITA ELECTRIC WORKS, LTD.

Inventor： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Nobuyoshi Koshida

IPC: H01J001/00

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/025 ,  H01J2201/3125 ,  Y10S977/939

Abstract: There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region 161.

Abstract translation: 以低成本提供了以高稳定性和高效率发射电子的场致发射电子源及其制造方法。 在场发射电子源中，在其主表面上的n型硅衬底上形成强电场漂移部分106，并且在强电场漂移部分106上形成由金薄膜制成的表面电极107。 并且欧姆电极2形成在n型硅衬底101的背面上。在该场发射电子源110中，当表面电极107设置在真空中并且向表面电极107施加直流电压时 相对于n型硅衬底101（欧姆电极2）具有正极性，从n型硅衬底101注入的电子在强电场漂移部106中漂移，并通过表面电极107发射。 强电场漂移部106包括漂移区域161，该漂移区域161在与n型硅衬底1的厚度方向成直角的网状结构中具有横截面， 以及散热区域162，其被填充在网孔的空隙中，并且具有比漂移区域161高的导热性。

公开(公告)号：US20030151343A1

公开(公告)日：2003-08-14

申请号：US10305294

申请日：2002-11-26

Inventor： Balu Jeganathan ,  John Albert Montagnat

IPC: H01J001/00

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: A method of producing a lamp is disclosed. The method provides for mounting light emitting junctions on a support structure such that the junctions adopt a three-dimensional array.

Abstract translation: 公开了一种制造灯的方法。 该方法提供将发光结安装在支撑结构上，使得接点采用三维阵列。

公开(公告)号：US20030076023A1

公开(公告)日：2003-04-24

申请号：US10252800

申请日：2002-09-24

Applicant: Matsushita Electric Works, Ltd.

Inventor： Takuya Komoda ,  Yoshiyuki Takegawa ,  Koichi Aizawa ,  Takashi Hatai ,  Tsutomu Ichihara ,  Yoshiaki Honda ,  Yoshifumi Watabe ,  Toru Baba

IPC: H01J001/00

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J9/022 ,  H01J2201/30446 ,  H01J2201/3125

Abstract: A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2), An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).

Abstract translation: 在由诸如玻璃或陶瓷基板的绝缘基板构成的基板（1）的一个主表面侧上形成下层电极（2）和由层状导电碳化物层构成的表面电极（7）。 在下电极（2）上形成非掺杂多晶硅层（3），在多晶硅层（3）上形成由氧化多孔多晶硅构成的电子迁移层（6）。 电子转移层（6）由包括多晶硅的复合纳米晶体层和与多晶硅的晶界相邻的许多纳米晶体硅构成。 当在下电极（2）和表面电极（7）之间施加电压使得表面电极（7）具有较高电位时，电子从下电极（2）向表面电极（7）注入，并且 通过电子转移层（6）通过表面电极（7）发射。

公开(公告)号：US20020093278A1

公开(公告)日：2002-07-18

申请号：US10071440

申请日：2002-02-08

Applicant: Micron Technology, Inc.

Inventor： David H. Wells ,  Ji Ung Lee ,  Aaron R. Wilson

IPC: H01J001/02 ,  H01J001/00 ,  H01L021/00 ,  H01J009/12 ,  H01J009/14 ,  H01J009/04

CPC classification number: H01J29/467 ,  H01J9/025 ,  H01J2329/00

Abstract: A method of forming an extraction grid for field emitter tip structures is described. A conductive layer is deposited over an insulative layer formed over the field emitter tip structures. The conductive layer is milled using ion milling. Owing to topographical differences along an exposed surface of the conductive layer, ions strike the exposed surface at various angles of incidence. As etch rate from ion milling is dependent at least in part upon angle of incidence, a selectivity based on varying topography of the exposed surface (nulltopographic selectivitynull) results in non-uniform removal of material thereof. In particular, portions of the conductive layer in near proximity to the field emitter tip structures are removed faster than portions of the conductive layer between emitter tip structures. Thus, portions of the insulative layer in near proximity to the field emitter tip structures may be exposed while leaving intervening portions of the conductive layer for forming the extraction grid. Accordingly, such formation of the extraction grid is self-aligned to its associated emitter tip structures.

Abstract translation: 描述了一种形成场发射器尖端结构的提取栅格的方法。 导电层沉积在形成在场致发射极尖端结构之上的绝缘层上。 使用离子铣削铣削导电层。 由于沿着导电层的暴露表面的形貌差异，离子以不同的入射角度撞击暴露的表面。 由于来自离子研磨的蚀刻速率至少部分地取决于入射角，基于暴露表面的变化的形貌的选择性（“地形选择性”）导致其材料的非均匀去除。 特别地，与发射极尖端结构之间的导电层的部分相比，导电层在场发射极尖端结构附近的部分被去除得更快。 因此，靠近场发射极尖端结构的绝缘层的部分可以暴露，同时留下用于形成提取栅格的导电层的中间部分。 因此，提取栅格的这种形成与其相关联的发射极尖端结构自对准。

公开(公告)号：US20020053864A1

公开(公告)日：2002-05-09

申请号：US09871976

申请日：2001-06-04

Inventor： Akihiko Hosono ,  Shuhei Nakata ,  Masaaki Hiraki

IPC: H01J001/00

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469

Abstract: Obtained are a carbon thin body having a structure making it possible to produce a planar electron source in a simple manner; a process for producing the carbon thin body; and an electric field emission type electron source using the carbon thin body. A carbon thin body that has a given thickness and is in the form of a thin layer having a front surface and a back surface, wherein at least in the front surface portion a curved wall is continuous, as is viewed in plan, to form an approximately netlike structure.

Abstract translation: 获得的碳薄体具有能够以简单的方式制造平面电子源的结构; 碳薄体的制造方法; 以及使用碳薄体的电场发射型电子源。 具有给定厚度并且具有前表面和后表面的薄层形式的碳薄体，其中至少在前表面部分中弯曲壁是连续的，如在平面图中所示，以形成 大致网状结构。

公开(公告)号：US20020033322A1

公开(公告)日：2002-03-21

申请号：US09948699

申请日：2001-09-10

Inventor： Haruyuki Nakano ,  Yasuhiro Okamoto ,  Ryuichi Yoshida

IPC: H01J001/00

CPC classification number: H02N2/067 ,  H02N2/025

Abstract: A smooth impact drive mechanism utilizing an electromechanical conversion element, in which a preheating voltage to preheat the electromechanical conversion element is impressed thereto before the impression of a drive voltage to the electromechanical conversion element, in order to realize stable drive characteristics by reducing fluctuation in the speed of the moving unit. In addition, drive parameters are changed in accordance with the temperature of the electromechanical conversion element. Furthermore, drive parameters are changed in accordance with the moving speed of the moving unit.

Abstract translation: 一种利用机电转换元件的平滑冲击驱动机构，其中在机电转换元件的驱动电压的压印之前，将机电转换元件预热的预热电压施加到机电转换元件，以便通过减小机电转换元件的波动来实现稳定的驱动特性 移动单元的速度。 此外，驱动参数根据机电转换元件的温度而改变。 此外，驱动参数根据移动单元的移动速度而改变。

公开(公告)号：US20020008453A1

公开(公告)日：2002-01-24

申请号：US09755121

申请日：2001-01-08

Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA

Inventor： Takuya Ohira ,  Hiroyuki Teramoto ,  Keiji Fukuyama ,  Kiyoshi Saitou

IPC: H01J001/00 ,  H01J001/05

CPC classification number: H01J1/26 ,  H01J1/142

Abstract: A cathode for an electron tube provided with a base containing at least one kind of reducing agent, a metal layer whose main component is tungsten formed on the base, and an electron emission material layer whose main component is an alkaline-earth metal oxide including barium formed thereon, deformation of the base in operation is controlled by composing the metal layer with a porous metal layer and limiting the thickness and the porosity of the metal layer. As a result, it is possible to achieve a cathode for an electron tube applicable to a cathode-ray tube for a display in which the cutoff voltage is liable to change.

Abstract translation: 一种电子管的阴极，其具有包含至少一种还原剂的基底，在基底上形成主要成分为钨的金属层，以及主要成分是包含钡的碱土金属氧化物的电子发射材料层 通过在多孔金属层上构成金属层，限制金属层的厚度和孔隙率，可以控制基体在工作中的变形。 结果，可以实现适用于其中截止电压易于改变的显示器的阴极射线管的电子管阴极。