公开(公告)号：US5686791A

公开(公告)日：1997-11-11

申请号：US479480

申请日：1995-06-07

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J61/067 ,  H01J63/00 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J63/06 ,  H01J1/304 ,  H01J1/3042 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/00 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00 ,  H01J2329/8625 ,  Y10T428/292

Abstract: A field emission cathode for use in flat panel displays is disclosed comprising a layer of conductive material and a layer of amorphic diamond film, functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities. Use of the cathode to form a computer screen is also disclosed along with the use of the cathode to form a fluorescent light source.

公开(公告)号：US5612712A

公开(公告)日：1997-03-18

申请号：US479270

申请日：1995-06-07

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: G09G3/22 ,  G09G3/30 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J29/08 ,  H01J29/28 ,  H01J31/12 ,  H01J61/067 ,  H01J63/06

CPC classification number: H01J1/304 ,  G09G3/22 ,  H01J1/3042 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864

Abstract: A matrix-addressed diode flat panel display of field emission type is described, utilizing a diode (two terminal) pixel structure. The flat panel display comprises a cathode assembly having a plurality of cathodes, each cathode including a layer of cathode conductive material and a layer of a low effective work-function material deposited over the cathode conductive material and an anode assembly having a plurality of anodes, each anode including a layer of anode conductive material and a layer of cathodoluminescent material deposited over the anode conductive material, the anode assembly located proximate the cathode assembly to thereby receive charged particle emissions from the cathode assembly, the cathodoluminescent material emitting light in response to the charged particle emissions. The flat panel display further comprises means for selectively varying field emission between the plurality of corresponding light-emitting anodes and field-emission cathodes to thereby effect an addressable grey-scale operation of the flat panel display.

Abstract translation: 利用二极管（二端）像素结构描述场发射型矩阵寻址二极管平板显示器。 平板显示器包括具有多个阴极的阴极组件，每个阴极包括阴极导电材料层和沉积在阴极导电材料上的低有效功函数材料层和具有多个阳极的阳极组件， 每个阳极包括阳极导电材料层和沉积在阳极导电材料上的阴极发光材料层，阳极组件位于阴极组件附近，从而接收来自阴极组件的带电粒子发射，阴极发光材料响应于 带电粒子排放。 平板显示器还包括用于选择性地改变多个对应的发光阳极和场发射阴极之间的场发射的装置，从而实现平板显示器的可寻址的灰度级操作。

公开(公告)号：US5449970A

公开(公告)日：1995-09-12

申请号：US995846

申请日：1992-12-23

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: G09G3/22 ,  G09G3/30 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J29/08 ,  H01J29/28 ,  H01J31/12 ,  H01J61/067 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J1/304 ,  G09G3/22 ,  H01J1/3042 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864

Abstract: A matrix-addressed diode flat panel display of field emission type is described, utilizing a diode (two terminal) pixel structure. The flat panel display includes a cathode assembly having a plurality of cathodes, each cathode including a layer of cathode conductive material and a layer of a low effective work-function material deposited over the cathode conductive material and an anode assembly having a plurality of anodes, each anode including a layer of anode conductive material and a layer of cathodoluminescent material deposited over the anode conductive material, the anode assembly located proximate the cathode assembly to thereby receive charged particle emissions from the cathode assembly, the cathodoluminescent material emitting light in response to the charged particle emissions. The flat panel display further includes the capability for selectively varying field emission between the plurality of corresponding light-emitting anodes and field-emission cathodes to thereby effect an addressable grey-scale operation of the flat panel display.

Abstract translation: 利用二极管（二端）像素结构描述场发射型矩阵寻址二极管平板显示器。 平板显示器包括具有多个阴极的阴极组件，每个阴极包括阴极导电材料层和沉积在阴极导电材料上的低有效功函数材料层和具有多个阳极的阳极组件， 每个阳极包括阳极导电材料层和沉积在阳极导电材料上的阴极发光材料层，阳极组件位于阴极组件附近，从而接收来自阴极组件的带电粒子发射，阴极发光材料响应于 带电粒子排放。 平板显示器还包括用于选择性地改变多个对应的发光阳极和场致发射阴极之间的场发射的能力，从而实现平板显示器的可寻址的灰度级操作。

公开(公告)号：US5412285A

公开(公告)日：1995-05-02

申请号：US73149

申请日：1993-06-03

Applicant: Hiroshi Komatsu

Inventor： Hiroshi Komatsu

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J21/10 ,  H01L23/544 ,  H03F3/00 ,  H05B37/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J21/105 ,  H01J3/022 ,  H01J9/025 ,  H01L23/544 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226 ,  H01L2223/54473 ,  H01L2924/0002

Abstract: One embodiment of the present invention is a linear amplifier based on a field emission device that is driven at its input in current-mode. The ratio (gamma) of the separation distance between the anode and cathode (d.sub.ak) to the separation distance between the cathode and gate (d.sub.gk) is in the range of 20 to 200. The amplifier betas that result from these gammas range from a low of 30 to a high of 1000. The linear amplifier is combined with an active matrix to form a vacuum flat-panel display with good gray-scale performance.

Abstract translation: 本发明的一个实施例是基于在电流模式下在其输入端被驱动的场发射器件的线性放大器。 阳极和阴极之间的间隔距离（dak）与阴极和栅极之间的间隔距离（dgk）的比值（γ）在20至200的范围内。由这些伽马值产生的放大器β的范围从低 30到高达1000.线性放大器与有源矩阵组合，形成具有良好灰度性能的真空平板显示器。

公开(公告)号：US5378182A

公开(公告)日：1995-01-03

申请号：US94691

申请日：1993-07-22

Applicant: David Nan-Chou Liu

Inventor： David Nan-Chou Liu

IPC: H01J9/02 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J2201/30426

Abstract: A method of forming a self-aligned gated field emitter with substantial manufacturing advantages is described. There is provided a substrate having at its surface a conductive layer. A first dielectric layer is deposited over the substrate. A conducting layer is deposited over the dielectric layer. Lithography and etching are used to form an opening through the conducting layer and the dielectric layer down to the surface of the substrate wherein there is formed an overhang of the conducting layer over the etched dielectric layer in the opening. Material is vertically deposited through the opening and over the conducting layer until the field emitter is formed and the opening is closed by build up of the depositing material over the conducting layer. At least a portion of the build up of the depositing material over the conducting layer is oxidized down to the desired opening size to form an oxide layer of the material. The oxide layer is removed by etching to expose the desired opening, thereby completing formation of the self-aligned gated field emitter.

Abstract translation: 描述了一种形成具有显着制造优点的自对准门控场发射器的方法。 提供了一种在其表面具有导电层的衬底。 在衬底上沉积第一介电层。 在电介质层上沉积导电层。 使用光刻和蚀刻来形成穿过导电层和电介质层的开口，直到衬底的表面，其中在开口中在蚀刻的电介质层上形成导电层的突出端。 材料通过开口和导电层上方垂直沉积，直到形成场发射体，并且通过在导电层上形成沉积材料来封闭开口。 在导电层上沉积材料的堆积的至少一部分被氧化到所需的开口尺寸以形成材料的氧化物层。 通过蚀刻去除氧化物层以暴露所需的开口，从而完成自对准门控场致发射体的形成。

公开(公告)号：US5374868A

公开(公告)日：1994-12-20

申请号：US943966

申请日：1992-09-11

Applicant: Kevin Tjaden ,  J. Brett Rolfson

Inventor： Kevin Tjaden ,  J. Brett Rolfson

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30426 ,  H01J2329/8625

Abstract: A field emitter structure is formed, having trench accessible cold cathode tips is fabricated by forming trenches in a substrate. The trenches are subsequently filled with a conformal insulating layer, a highly conductive layer, and a polysilicon layer. The layers are etched to form emitter tips which are disposed contiguous with the trenches. Electrical signals are propagated through the trenches permitting increased performance of the emitter structure.

Abstract translation: 形成场致发射结构，通过在衬底中形成沟槽来制造具有沟槽可访问的冷阴极尖端。 随后用保形绝缘层，高导电层和多晶硅层填充沟槽。 蚀刻这些层以形成与沟槽邻接设置的发射极尖端。 电信号通过沟槽传播，允许发射器结构的性能提高。

公开(公告)号：US5188977A

公开(公告)日：1993-02-23

申请号：US802811

申请日：1991-12-06

Applicant: Reinhard Stengl ,  Hans-Willi Meul ,  Wolfgang Hoenlein

Inventor： Reinhard Stengl ,  Hans-Willi Meul ,  Wolfgang Hoenlein

IPC: H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01L21/20 ,  H01L21/306 ,  H01L45/00

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01J2201/30426 ,  Y10S148/05

Abstract: For manufacturing an electrically conductive tip composed of a doped semiconductor material, a mask layer is produced on a substrate composed of the semiconductor material. This mask layer contains a material at least at its surface and directly on the substrate whereon the semiconductor material does not grow in a selective epitaxy. An opening wherein the surface of the substrate lies exposed is produced in the mask layer. The electrically conductive tip is produced by a selective epitaxy on the exposed surface of the substrate such that the layer growth in the direction parallel to the surface of the substrate is lower than in the direction perpendicular to the surface of the substrate.

Abstract translation: 为了制造由掺杂半导体材料构成的导电尖端，在由半导体材料构成的基板上制造掩模层。 该掩模层至少在其表面包含材料，并且直接在衬底上，半导体材料不会在选择性外延生长中。 在掩模层中产生其中裸露表面露出的开口。 通过在衬底的暴露表面上的选择性外延产生导电尖端，使得沿与衬底表面平行的方向上的层生长低于垂直于衬底表面的方向。

公开(公告)号：US11935720B1

公开(公告)日：2024-03-19

申请号：US18491725

申请日：2023-10-20

Applicant: Dazhi Chen ,  Zhongwei Chen

Inventor： Dazhi Chen ,  Zhongwei Chen

IPC: H01J1/304

CPC classification number: H01J1/3044 ,  H01J2201/30415 ,  H01J2201/30426 ,  H01J2201/30496

Abstract: A field-emission type electron source includes (i) a single-crystal tungsten rod having a sharpened terminus and (ii) a mass of ZrO formed only on a portion of the surface, or the entire surface, of the sharpened terminus. In preferred design, the single-crystal tungsten rod is placed in a gaseous medium that consists of oxygen and a non-oxygen gas. The molar ratio between oxygen and the non-oxygen gas is greater than 1:1.

公开(公告)号：US08217565B2

公开(公告)日：2012-07-10

申请号：US12987338

申请日：2011-01-10

Applicant: Theodore Carl Tessner, II ,  Gregory A. Schwind ,  Lynwood W. Swanson

Inventor： Theodore Carl Tessner, II ,  Gregory A. Schwind ,  Lynwood W. Swanson

IPC: H01J19/24 ,  H01J17/38 ,  H01J1/304

CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J37/073 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2237/06316 ,  H01J2237/06341

Abstract: A stable cold field electron emitter is produced by forming a coating on an emitter base material. The coating protects the emitter from the adsorption of residual gases and from the impact of ions, so that the cold field emitter exhibits short term and long term stability at relatively high pressures and reasonable angular electron emission.

Abstract translation: 通过在发射极基材上形成涂层来制造稳定的冷场电子发射体。 涂层保护发射体免受残留气体的吸附和离子的冲击，使得冷场发射体在相当高的压力和合理的角度电子发射下表现出短期和长期的稳定性。

公开(公告)号：US20100053126A1

公开(公告)日：2010-03-04

申请号：US12549456

申请日：2009-08-28

Applicant: Tamaki Kobayashi ,  Shoji Nishida ,  Takuto Moriguchi ,  Takeo Tsukamoto

Inventor： Tamaki Kobayashi ,  Shoji Nishida ,  Takuto Moriguchi ,  Takeo Tsukamoto

IPC: G09G5/00 ,  H01J1/02 ,  H01J1/62

CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30492 ,  H01J2201/3165 ,  H01J2329/0426 ,  H01J2329/0471 ,  H01J2329/0489

Abstract: An electron emission device includes a polycrystalline film of lanthanum boride, and a size of a crystallite which composes the polycrystalline film is equal to or more than 2.5 nm and equal to or less than 100 nm, preferably the film thickness of the polycrystalline film is equal to or less than 100 nm.

Abstract translation: 电子发射装置包括硼化镧多晶膜，构成多晶膜的微晶尺寸等于或大于2.5nm且等于或小于100nm，优选多晶膜的膜厚度相等 至或小于100nm。