公开(公告)号：US20070284573A1

公开(公告)日：2007-12-13

申请号：US11642271

申请日：2006-12-20

Applicant: Tseung-Yuen Tseng ,  Chia-Ying Lee ,  Seu-Yi Li ,  Pang Lin

Inventor： Tseung-Yuen Tseng ,  Chia-Ying Lee ,  Seu-Yi Li ,  Pang Lin

IPC: H01L29/12 ,  H01L21/00

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30446

Abstract: This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.

Abstract translation: 本发明涉及一种用于制造低温下具有高纵横比的ZnO纳米线的方法，其与半导体制造工艺相关，并且获得了栅极控制的场致发射三极管。 该方法包括提供半导体衬底，分别在半导体衬底上沉积电介质层和导电层，限定电介质层和导电层上的发射极阵列的位置，将沉积超薄ZnO膜作为接种层 衬底，通过使用水热法生长ZnO纳米线作为发射极阵列，并蚀刻除发射极阵列之外的区域，然后获得栅极控制的场致发射三极管。

公开(公告)号：US07304423B2

公开(公告)日：2007-12-04

申请号：US10365944

申请日：2003-02-13

Applicant: Susumu Sasaki ,  Yoshiyuki Kaneko ,  Shigemi Hirasawa ,  Yuuichi Kijima ,  Kenji Miyata

Inventor： Susumu Sasaki ,  Yoshiyuki Kaneko ,  Shigemi Hirasawa ,  Yuuichi Kijima ,  Kenji Miyata

IPC: H01J1/14 ,  G09G3/10

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469

Abstract: To obtain a paste for electron sources which can enhance heat resistance of carbon nanotubes, which can suppress burn-out of the carbon nanotubes even during heating at a high temperature, and can exhibit a high electron emission performance, boron (B) is added to the paste formed of the carbon nanotubes and metal. Due to the addition of boron, the oxidation of the carbon nanotubes can be suppressed, and the degradation of the electron emission characteristics and the degradation of the uniformity of the emission of electrons during the heating process such as baking can be prevented.

Abstract translation: 为了获得能够提高碳纳米管的耐热性的电子源用糊料，即使在高温加热时也能够抑制碳纳米管的烧尽，并且能够发挥高的电子发射性能，可以向硼（B）中添加硼 该糊状物由碳纳米管和金属形成。 由于添加硼，可以抑制碳纳米管的氧化，并且可以防止在诸如烘烤的加热过程中电子发射特性的劣化和电子发射均匀性的劣化。

公开(公告)号：US20070252506A1

公开(公告)日：2007-11-01

申请号：US11734393

申请日：2007-04-12

Applicant: Joo-Young Kim

Inventor： Joo-Young Kim

IPC: H01J1/02

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/30446 ,  Y10T428/31663

Abstract: An electron emission source includes a carbon-based material and resultant material formed by curing and heat treating at least one silicon-based material represented by formula (1), (2), and/or (3) below: where R1 through R22 are each independently a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C1-C20 alkoxy group, a substituted or unsubstituted C1-C20 alkenyl group, a halogen atom, a hydroxyl group or a mercapto group, and m and n are each integers from 0 to 1,000. An electron emission device and an electron emission display device include the electron emission source. A composition for forming electron emission sources includes the carbon-based material and the silicon-based material. A method of forming the electron emission source includes applying the composition to a substrate; and heat treating the applied composition. The adhesion between the electron emission source including the cured and heat treated resultant material of the silicon-based material and a substrate is excellent, and thus the reliability of the electron emission device including the cured and heat treated resultant material of the silicon-based material can be enhanced.

Abstract translation: 电子发射源包括通过固化和热处理由式（1），（2）和/或（3）表示的至少一种硅基材料形成的碳基材料和所得材料：其中R“ 1个R 22各自独立地为取代或未取代的C 1 -C 20烷基，取代或未取代的C 1 -C 20烷氧基，取代或未取代的C 1 -C 20烯基，卤素 原子，羟基或巯基，m和n各自为0〜1000的整数。 电子发射装置和电子发射显示装置包括电子发射源。 用于形成电子发射源的组合物包括碳基材料和硅基材料。 形成电子发射源的方法包括将组合物施加到基底上; 并对所施加的组合物进行热处理。 包括硅基材料的固化和热处理的所得材料的电子发射源与基板之间的粘附性优异，因此包括硅基材料的固化和热处理的所得材料的电子发射装置的可靠性 可以加强。

公开(公告)号：US20070096619A1

公开(公告)日：2007-05-03

申请号：US11588351

申请日：2006-10-27

Applicant: Kwang-Seok Jeong

Inventor： Kwang-Seok Jeong

IPC: H01J1/62

CPC classification number: H01J1/3042 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/30446 ,  H01J2201/317

Abstract: An electron emission source includes a carbon-based material and a photoelectric element, an electron emission device and an electron emission display include the electron emission sources. The electron emission source is prepared by preparing a composition for forming an electron emission source that contains a carbon-based material, a photoelectric element, and a vehicle, applying the composition to a substrate, and heating the composition applied to the substrate. The electron emission source includes the photoelectric element in addition to the carbon material, and thus can have a high luminance.

Abstract translation: 电子发射源包括碳基材料和光电元件，电子发射器件和电子发射显示器包括电子发射源。 电子发射源通过制备用于形成含有碳基材料，光电元件和载体的电子发射源的组合物来制备，将组合物施加到基底上，并加热施加到基底上的组合物。 电子发射源除了碳材料之外还包括光电元件，因此可以具有高亮度。

公开(公告)号：US07187112B2

公开(公告)日：2007-03-06

申请号：US11223972

申请日：2005-09-13

Applicant: Masayuki Nakamoto

Inventor： Masayuki Nakamoto

IPC: H01J1/304

CPC classification number: H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469 ,  H01J2329/00 ,  Y10S977/939

Abstract: A field emission cold cathode device of a lateral type includes a cathode electrode and gate electrode disposed on a major surface of a support substrate laterally side by side. The cathode electrode and gate electrode have side surfaces which oppose each other, and an emitter is disposed on the opposite side surface of the cathode electrode. The emitter includes a metal plating layer formed on the cathode electrode, and a plurality of granular or rod-shaped micro-bodies. The micro-bodies are consisting essentially of a material selected from the group consisting of fullerenes, carbon nanotubes, graphite, a material with a low work function, a material with a negative electron affinity, and a metal material, and are supported in the metal plating layer in a dispersed state.

Abstract translation: 横向型的场致发射冷阴极器件包括侧向并排设置在支撑基板的主表面上的阴极电极和栅极电极。 阴极电极和栅电极具有彼此相对的侧表面，并且发射极设置在阴极的相对侧表面上。 发射极包括在阴极上形成的金属镀层，以及多个粒状或棒状的微型体。 微体基本上由选自富勒烯，碳纳米管，石墨，低功函数的材料，具有负电子亲和性的材料和金属材料组成的组合物组成，并且被支撑在金属中 电镀层处于分散状态。

公开(公告)号：US07147529B2

公开(公告)日：2006-12-12

申请号：US11102852

申请日：2005-04-11

Applicant: Akira Taomoto ,  Masahiro Deguchi ,  Mitsuru Hashimoto ,  Toyokazu Ozaki ,  Motoshi Shibata

Inventor： Akira Taomoto ,  Masahiro Deguchi ,  Mitsuru Hashimoto ,  Toyokazu Ozaki ,  Motoshi Shibata

IPC: H01J1/62 ,  H01J63/04

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30446 ,  Y02E60/324

Abstract: The present invention provides an electron emission material that is excellent in electron emission characteristics, a method of manufacturing the same, as well as an electron emission element. The method is a method of manufacturing an electron emission material including a carbon material obtained by baking a polymer film. In the method, a polyamic acid solution is prepared in which at least one metallic compound selected from a metal oxide and a metal carbonate is dispersed; the polyamic acid solution thus prepared is formed into a film and then is imidized to form a polyimide film including the metallic compound; and then the polyimide film thus formed is baked to form the carbon material. The electron emission material is formed so that it includes a carbon material, a protrusion having a concavity in its surface is formed at the surface of the carbon material, and the protrusion includes a metallic element.

Abstract translation: 本发明提供电子发射特性优异的电子发射材料，其制造方法以及电子发射元件。 该方法是制造包含通过烘焙聚合物膜获得的碳材料的电子发射材料的方法。 在该方法中，制备分散至少一种选自金属氧化物和金属碳酸盐的金属化合物的聚酰胺酸溶液; 将如此制备的聚酰胺酸溶液形成膜，然后被酰亚胺化以形成包含金属化合物的聚酰亚胺膜; 然后将由此形成的聚酰亚胺膜烘烤以形成碳材料。 电子发射材料形成为包括碳材料，在碳材料的表面上形成有表面凹陷的突起，突起包括金属元素。

公开(公告)号：US20060231825A1

公开(公告)日：2006-10-19

申请号：US10522740

申请日：2003-07-23

Applicant: Vincenc Nemanic ,  Marko Zumer ,  Ales Mrzel ,  Maja Remskar ,  Dragan Mihailovic

Inventor： Vincenc Nemanic ,  Marko Zumer ,  Ales Mrzel ,  Maja Remskar ,  Dragan Mihailovic

IPC: H01L29/06 ,  H01L29/12

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J2201/30446 ,  H01J2201/30469

Abstract: The present invention pertains to the use of quasi-one-dimensional transition metal ternary compounds MxHyHaz (where M is a transition metal Mo, W, Ta, Nb; H is sulfur (S), selenium (Se), tellurium (Te); Ha is iodine (I)) and of doped quasi-one-dimensional transition metal ternary compounds MxHyHaz, (where M=Ta, Ti, Nb; H is sulfur (S), selenium (Se), tellurium (Te); Ha is iodine (I)) with elements of group 1b (silver) (Ag), gold (Au), or copper (Cu)) as electron emitters under the influence of an external electric field. The percentage of quasi-one-dimensional transition metal ternary compounds doped with elements of group 1b in the active material ranges from 0.01 to 99.9 the rest consisting of additives in the form of conducting, non-conducting or semi-conducting compounds or composites. Electron emission takes place at a pressure below 1 mbar.

Abstract translation: 本发明涉及准一维过渡金属三元化合物的用途，其中M是过渡金属 金属Mo，W，Ta，Nb; H是硫（S），硒（Se），碲（Te）; Ha是碘（I））和掺杂的准一维过渡金属三元化合物M x （其中M = Ta，Ti，Nb; H是硫（S），硒（Se），碲（Te）; 在外部电场的影响下，作为电子发射体，具有1b族（银）（Ag），金（Au）或铜（Cu）的元素的卤素为碘（I））。 在活性材料中掺杂1b族元素的准一维过渡金属三元化合物的百分比范围为0.01至99.9，其余由导电，非导电或半导体化合物或复合材料形式的添加剂组成。 电子发射发生在低于1毫巴的压力下。

公开(公告)号：US20060197052A1

公开(公告)日：2006-09-07

申请号：US11370396

申请日：2006-03-06

Applicant: Diane Pugel

Inventor： Diane Pugel

IPC: H01F1/04

CPC classification number: H01F1/44 ,  G01Q60/56 ,  H01F1/009 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/306

Abstract: A method of forming an array of pointed structures comprises depositing a ferrofluid on a substrate, applying a magnetic field to the ferrofluid to generate an array of surface protrusions, and solidifying the surface protrusions to form the array of pointed structures. The pointed structures may have a tip radius ranging from approximately 10 nm to approximately 25 μm. Solidifying the surface protrusions may be carried out at a temperature ranging from approximately 10 degrees C. to approximately 30 degrees C.

Abstract translation: 形成尖锐结构阵列的方法包括将铁磁流体沉积在基底上，向铁磁流体施加磁场以产生阵列的表面突起，并固化表面突起以形成尖锐结构的阵列。 尖的结构可以具有从大约10nm到大约25μm的范围的尖端半径。 表面突起的固化可以在约10摄氏度至约30摄氏度的温度下进行。

公开(公告)号：US07102277B2

公开(公告)日：2006-09-05

申请号：US10799876

申请日：2004-03-15

Applicant: Masayuki Nakamoto

Inventor： Masayuki Nakamoto

IPC: H01J1/304

CPC classification number: H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469 ,  H01J2329/00 ,  Y10S977/939

Abstract: A field emission cold cathode device of a lateral type includes a cathode electrode and gate electrode disposed on a major surface of a support substrate laterally side by side. The cathode electrode and gate electrode have side surfaces which oppose each other, and an emitter is disposed on the opposite side surface of the cathode electrode. The emitter includes a metal plating layer formed on the cathode electrode, and a plurality of granular or rod-shaped micro-bodies. The micro-bodies are consisting essentially of a material selected from the group consisting of fullerenes, carbon nanotubes, graphite, a material with a low work function, a material with a negative electron affinity, and a metal material, and are supported in the metal plating layer in a dispersed state.

公开(公告)号：US20060061257A1

公开(公告)日：2006-03-23

申请号：US11223972

申请日：2005-09-13

Applicant: Masayuki Nakamoto

Inventor： Masayuki Nakamoto

IPC: H01J63/04 ,  H01J1/62

CPC classification number: H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469 ,  H01J2329/00 ,  Y10S977/939

Abstract: A field emission cold cathode device of a lateral type includes a cathode electrode and gate electrode disposed on a major surface of a support substrate laterally side by side. The cathode electrode and gate electrode have side surfaces which oppose each other, and an emitter is disposed on the opposite side surface of the cathode electrode. The emitter includes a metal plating layer formed on the cathode electrode, and a plurality of granular or rod-shaped micro-bodies. The micro-bodies are consisting essentially of a material selected from the group consisting of fullerenes, carbon nanotubes, graphite, a material with a low work function, a material with a negative electron affinity, and a metal material, and are supported in the metal plating layer in a dispersed state.