公开(公告)号：EP0761831A1

公开(公告)日：1997-03-12

申请号：EP96304889.7

申请日：1996-07-02

Applicant: TANAKA DENSHI KOGYO KABUSHIKI KAISHA

Inventor： Itabashi, Ichimitsu, c/o Mitaka Fact. of ,  Mimura, Toshitaka, c/o Mitaka Fact. of

IPC: C22C5/02 ,  H01L23/49

CPC classification number: H01L24/745 ,  C22C5/02 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/435 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45164 ,  H01L2224/45565 ,  H01L2224/45644 ,  H01L2224/48624 ,  H01L2224/745 ,  H01L2924/00011 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/01004 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01006

Abstract: There are provided a thin gold alloy wire for semiconductor chip bonding which is extremely useful in reducing the size of a semiconductor device and attaining a higher density, as well as a method for manufacturing the same. The thin gold alloy wire essentially consists of the invention's predetermined amounts of elements selected from Pt, Pd, Be, Ge, Ca, La, Y and Eu and the balance being Au and incidental impurity and has an elongation of 3% to 8% and a Young's modulus of 6,800 to 9,000 kgf/mm 2 . Since the thin wire is high in strength in spite of a small diameter, the occurrence of wire breaking during wiring and use is diminished and the deterioration of bonding strength after standing at a high temperature is reduced, so it is possible to suppress the breaking of the wire under vibration. By cooling a molten gold alloy 1 of the composition according to the invention within a crucible from the lower end toward the upper end of the crucible it is made possible to obtain positively and relatively easily a thin gold alloy wire having the aforesaid alloy composition and having an elongation of 3% to 8% and a Young's modulus of 6,800 to 9,000 kgf/mm 2 .

公开(公告)号：EP0339871A3

公开(公告)日：1990-12-27

申请号：EP89303936.2

申请日：1989-04-20

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Hatcher, Owen W., Jr.

IPC: H01L23/48

CPC classification number: H01L24/05 ,  H01L23/53223 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/85201 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/00015 ,  H01L2924/01201

Abstract: A corrosion tolerant bonding pad for a semiconductor device includes an interconnect (12) formed on the substrate (10) of the semiconductor device, a passivating layer (16) provided on the interconnect, the passivating layer having an aperture for exposing an enlarged bonding region of the interconnect, a barrier layer (28) provided on the exposed enlarged bonding area of the interconnect (12) and on portions of the passivating layer (16) surrounding the bonding area, and a bonding layer (30) provided on the barrier layer (28). The barrier layer is a non-corrosive, conductive material, for example, a compound of titanium and tungsten (TiW -- known as ti-tungsten).

公开(公告)号：EP2993693B1

公开(公告)日：2018-06-06

申请号：EP15773517.6

申请日：2015-03-31

Applicant: Nippon Micrometal Corporation ,  Nippon Steel & Sumikin Materials Co., Ltd.

Inventor： YAMADA, Takashi ,  ODA, Daizo ,  OISHI, Ryo ,  HAIBARA, Teruo ,  UNO, Tomohiro

IPC: H01L21/60 ,  B21C1/00 ,  C22C5/06 ,  C22C5/08 ,  C22F1/00 ,  C22F1/14 ,  B23K35/30 ,  B23K35/02 ,  H01L23/00

CPC classification number: H01L24/45 ,  B21C1/00 ,  B21C1/003 ,  B23K35/0227 ,  B23K35/3006 ,  C22C5/06 ,  C22C5/08 ,  C22F1/00 ,  C22F1/14 ,  H01L24/43 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45012 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2924/00011 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/013 ,  H01L2924/10253 ,  H01L2924/201 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01049 ,  H01L2924/01045 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01016 ,  H01L2924/01017 ,  H01L2924/00015 ,  H01L2924/01201

Abstract: Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis "a" and a short axis "b" of 10 or more and with an area of 15 µm 2 or more ("fiber texture"), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%. During the drawing steep, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.

公开(公告)号：EP3007216A4

公开(公告)日：2017-03-08

申请号：EP15772826

申请日：2015-03-31

Applicant: NIPPON MICROMETAL CORP ,  NIPPON STEEL & SUMIKIN MAT CO

Inventor： YAMADA TAKASHI ,  ODA DAIZO ,  OISHI RYO ,  HAIBARA TERUO ,  UNO TOMOHIRO

IPC: C22C5/06 ,  B21C1/00 ,  C22C5/08 ,  C22F1/14 ,  H01L23/00

CPC classification number: H01L24/45 ,  B21C1/00 ,  B21C1/003 ,  C22C5/06 ,  C22C5/08 ,  C22F1/00 ,  C22F1/14 ,  H01L24/43 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45012 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2924/00011 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/201 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/00 ,  H01L2924/01201 ,  H01L2924/01016 ,  H01L2924/01017 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/12044 ,  H01L2924/00015 ,  H01L2224/45664 ,  H01L2924/01049 ,  H01L2924/01045 ,  H01L2924/01004 ,  H01L2924/01005

Abstract: Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis "a" and a short axis "b" of 10 or more and with an area of 15 µm 2 or more ("fiber texture"), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 10% to less than 50%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 70% or more. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.

Abstract translation: 接合线的半导体装置中使用，其中两个倾斜故障和弹簧故障是由抑制（1）中的横截面容纳线中心，并平行于线长度方向（丝中心横截面）时，不存在晶粒与 长轴的“a”和短轴的10或更多个“b”的比率A / b，并与15微米2以上（“纤维织构”）区域，（2）当测量在导线的晶体方向 在导线中心的横截面长度方向，晶体方向<100>与以下中的角度差相对于比为15°或更小是导线长度方向，由面积比，10％至小于50％，和（ 3）当在金属丝表面测量在所述导线长度方向的晶体方向，晶体方向<100>与以下中的角度差相对于15°或更小的金属丝长度方向的比率是，由面积比，70％或 更多。 在拉伸步骤期间，具有降低的15.5％或更多的面积的比率的图手术被执行至少一次。 最终的热处理温度和所述半成品热处理温度由预定范围。

公开(公告)号：EP2656701A1

公开(公告)日：2013-10-30

申请号：EP11799425.1

申请日：2011-12-16

Applicant: Atotech Deutschland GmbH

Inventor： ÖZKÖK, Mustafa ,  RAMOS, Gustavo ,  KILIAN, Arnd

IPC: H05K3/24 ,  H01L23/498

CPC classification number: H05K13/04 ,  H01B1/02 ,  H01L23/49811 ,  H01L23/49866 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/03464 ,  H01L2224/04042 ,  H01L2224/05147 ,  H01L2224/05464 ,  H01L2224/05664 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/48664 ,  H01L2224/48864 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85205 ,  H01L2224/85464 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/20105 ,  H01L2924/3025 ,  H01L2924/351 ,  H05K1/09 ,  H05K3/244 ,  H05K2203/049 ,  H05K2203/072 ,  H05K2203/095 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01005 ,  H01L2924/20752 ,  H01L2924/01007 ,  H01L2924/01001

Abstract: The present invention relates to a method of bonding a copper wire to a substrate, particularly a printed circuit board and an IC-substrate, possessing a layer assembly comprising a copper bonding portion and a palladium or palladium alloy layer and a substrate having a copper wire bonded to aforementioned layer assembly.

公开(公告)号：EP1811555A4

公开(公告)日：2012-06-20

申请号：EP05787491

申请日：2005-09-28

Applicant: TANAKA ELECTRONICS IND

Inventor： MURAI HIROSHI ,  CHIBA JUN ,  TESHIMA SATOSHI

IPC: H01L23/49 ,  B23K35/30 ,  C22C5/02 ,  H01L21/60

CPC classification number: C22C5/02 ,  B23K35/3013 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/01105 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01205 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/01046 ,  H01L2924/01014 ,  H01L2924/01063 ,  H01L2924/01004 ,  H01L2924/01058 ,  H01L2924/01064 ,  H01L2924/01012 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01201 ,  H01L2924/00014 ,  H01L2924/0102 ,  H01L2924/01066 ,  H01L2924/0103 ,  H01L2924/0105 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01404 ,  H01L2924/01006

公开(公告)号：EP2208801B1

公开(公告)日：2012-04-04

申请号：EP08846565.3

申请日：2008-09-11

Applicant: Tanaka Denshi Kogyo K.K.

Inventor： MURAI, Hiroshi ,  CHIBA, Jun ,  AMADA, Fujio

IPC: C22C5/02 ,  B23K35/30 ,  H01L23/00 ,  H01L21/60

CPC classification number: C22C5/02 ,  B23K35/3013 ,  H01L24/02 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45164 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/78306 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/0106 ,  H01L2924/0107 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/01071 ,  H01L2924/00014 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/20752 ,  H01L2924/00013 ,  H01L2924/01006

Abstract: [Issues to be solved] Second bonding failures caused attached oxide of additive elements on high purity Au bonding wire are to be dissolved. [Solution means] Au alloy bonding wires comprising: 5 - 100 wt ppm Mg, 5 - 20 wt ppm In, 5 - 20 wt ppm Al, 5 - 20 wt ppm Yb, and Au residual is more than 99.995 wt % purity, and adding 5 - 20 wt ppm Ca, and for these alloys adding at least more than one element among 5 - 20 wt ppm La, 5 - 20 wt ppm Lu, 5 - 100 wt ppm Sn, 5 - 100 wt ppm Sr to the alloy, and/or, more over, adding 0.01 - 1.2 wt % Pd to these alloys. Bonding wire, which contains these trace additive elements .do not cause of disturbance by accumulated contamination, because of contamination, which formed at ball formation by micro discharge and at the first bonding to attached on tip of capillary, transferring to the wire at second bonding.

公开(公告)号：EP2146372A2

公开(公告)日：2010-01-20

申请号：EP09008708.1

申请日：2009-07-03

Applicant: Semikron Elektronik GmbH & Co. KG Patentabteilung

Inventor： Scheuermann, Uwe

IPC: H01L21/60 ,  H01L23/498

CPC classification number: H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/0612 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/48839 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/8384 ,  H01L2224/85439 ,  H01L2224/8584 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/2076 ,  H01L2224/45644 ,  H01L2924/01201 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00015

Abstract: Die Erfindung beschreibt eine leistungselektronische Verbindungseinrichtung mit einer ersten (120) und einer zweiten (220) voneinander elektrisch isolierten Kontaktfläche, mit jeweils mindestens einem einer Edelmetalloberfläche (160,260) aufweisenden Kontaktbereich (16,26) auf diesen Kontaktflächen, je einer auf den Kontaktbereichen angeordneten Sintermetallschicht (18,28) und einem flexiblen Verbindungselement (4). Hierbei weist dieses Verbindungselement eigene dritte (40) und vierte (42) Kontaktbereiche mit jeweils einer Edelmetalloberfläche auf. Ebenso sind diese dritten und vierten Kontaktbereiche mit den Sintermetallschichten der ersten und zweiten Kontaktflächen elektrisch leitend verbunden. Die erste Kontaktfläche (120) kann auf einer Metallisierung (14) eines Substrats angeordnet sein une die zweite Kontaktfläche (220) kann auf einem Leistungshalbleiterbauelement (1) angeordnet sein.

Abstract translation: 该装置具有彼此电绝缘的一对接触表面（120,220），以及包括接触表面上的贵金属表面（160,260）的一对接触区域（16,26）。 烧结金属层（18,28）和柔性连接元件（4）布置在接触区域上。 连接元件具有包括贵金属表面的另一对接触区域（40,42）。 后一对接触区域以导电方式与接触表面的烧结金属层连接。 电力电子连接装置的制造方法也包含独立权利要求。

公开(公告)号：WO2016175040A1

公开(公告)日：2016-11-03

申请号：PCT/JP2016/062041

申请日：2016-04-14

Applicant: 日鉄住金マイクロメタル株式会社 ,  新日鉄住金マテリアルズ株式会社

Inventor： 荒木　典俊 ,  山田　隆 ,  榛原　照男 ,  大石　良 ,  宇野　智裕

IPC: H01L21/60

CPC classification number: H01L24/85 ,  B23K20/007 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/745 ,  H01L24/78 ,  H01L2224/43125 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48463 ,  H01L2224/745 ,  H01L2224/781 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85054 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01201 ,  H01L2224/05599

Abstract: Ｃｕを主成分とする芯材と、前記芯材の表面にＰｄを主成分とする被覆層とを有するボンディングワイヤ（１）の先端にボール部を形成するボール形成方法において、常温、常圧で気体である炭化水素を含む非酸化雰囲気ガス（５）中で前記ボール部を形成することを特徴とする、Ｐｄ被覆Ｃｕボンディングワイヤの先端にボールを形成する際にボール表面のＰｄ被覆率を向上することができるボール形成方法を提供する。

Abstract translation: 提供一种用于在具有Cu作为主要成分的芯材的接合线（1）的末端处形成球部的球形成法，以及在芯材表面上的涂层， 具有Pd作为主要成分，其中，球形成方法的特征在于，在室温和大气压下含有烃并且为气体的非氧化性气体气体（5）中形成球部。 球形成方法使得可以在Pd涂覆的Cu键合线的尖端处形成球时提高球表面的Pd涂层比。

公开(公告)号：WO2016022068A1

公开(公告)日：2016-02-11

申请号：PCT/SG2015/000134

申请日：2015-07-28

Applicant: HERAEUS DEUTSCHLAND GMBH & CO. KG ,  HERAEUS MATERIALS SINGAPORE PTE., LTD.

Inventor： SARANGAPANI, Murali ,  ZHANG, Xi ,  YEUNG, Ping Ha ,  MILKE, Eugen

IPC: H01L23/49

CPC classification number: H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/85207 ,  H01L2924/00011 ,  H01L2924/14 ,  H01L2924/00015 ,  H01L2924/01201 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/01046 ,  H01L2924/01204 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01078 ,  H01L2924/00013 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/01005

Abstract: A ball-bond arrangement comprising an aluminum bond pad of a semiconductor device and a wire ball-bonded to the aluminum bond pad, wherein the wire has a diameter of 10 to 80 pm and comprises a core consisting of a copper alloy consisting of 0.05 to 3 wt.-% of palladium and/or platinum with copper as the remainder to make up 100 wt.-%.

Abstract translation: 一种球形接合装置，包括半导体器件的铝接合焊盘和与所述铝接合焊盘接合的线材，其中所述电线具有10至80μm的直径，并且包括由铜合金构成的芯体，所述铜合金由0.05至 3重量％的钯和/或铂，其余为铜，以构成100重量％。