Abstract:
In various embodiment, the present invention relates to method of fabricating a three-dimensional part by a process comprising the steps of: providing a wire comprising arc-melted refractory metallic material; translating a tip of the wire relative to a platform; while the tip of the wire is being translated, melting the tip of the wire with an energy source to form a molten bead, whereby the bead cools to form at least a portion of a layer of a three-dimensional part; and repeating steps (b) and (c) one or more times to produce the three dimensional part.
Abstract:
Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.
Abstract:
In various embodiments, a microreactor features a corrosion-resistant microchannel network encased within a thermally conductive matrix material that may define therewithin one or more hollow heat-exchange conduits.
Abstract:
In various embodiments, etchants featuring (i) mixtures of hydrochloric acid, methanesulfonic acid, and nitric acid, or (ii) mixtures of phosphoric acid, methanesulfonic acid, and nitric acid, are utilized to etch metallic bilayers while minimizing resulting etch discontinuities between the layers of the bilayer.
Abstract:
A refractory metal plate is provided. The plate has a center, a thickness, an edge, a top surface and a bottom surface, and has a crystallographic texture (as characterized by through thickness gradient, banding severity; and variation across the plate, for each of the texture components 100 / / ND and 111 / / ND, which is substantially uniform throughout the plate.
Abstract:
The present invention is directed to a composition consisting essentially of: a) from about 80 to about 99 moie% of TiO2, and b) from about 1 to about 20 mole % of one or more materials selected from the group consisting of i) WO2, ii) Ta2O5, iii) Nb2O5, iv) MoO2, v) Mo, vi) Ta, vii) Nb, viii) W and ix) mixtures thereof, wherein the mole %s are based on the total product and wherein the sum of components a) and b) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.
Abstract translation:本发明涉及一种基本上由以下组成的组合物:a)约80-约99摩尔%的TiO 2,和b)约1至约20摩尔%的一种或多种选自i)WO 2 ,ii)Ta 2 O 5,iii)Nb 2 O 5,iv)MoO 2,v)Mo,vi)Ta,vii)Nb,viii)W和ix)其混合物,其中摩尔%基于总产物, 组分a)和b)为100.本发明还涉及这种组合物的烧结产品,由烧结产品制成的溅射靶和由该组合物制成的透明导电膜。
Abstract:
A method of making an alloy of niobium that includes: A) forming a blend comprising niobium powder and a powder of a metal selected from the group consisting of yttrium, aluminum, hafnium, titanium, zirconium, thorium, lanthanum and cerium and pressing the blend to form pressed blend; B) attaching the pressed blend to an electrode comprising niobium; C) melting the electrode and pressed blend under vacuum arc remelting conditions, such that the blend mixes with the melted electrode; D) cooling the melted electrode to form an alloy ingot; and E) applying thermo-mechanical processing steps to the alloy ingot to form a wrought product. The method provides a fully recrystallized niobium wrought product with a grain size finer that ASTM 5, that can be used to make deep drawn cups and sputtering targets.
Abstract:
A substrate for semiconductor and integrated circuit components including: a core plate containing a Group VIB metal from the periodic table of the elements and/or an anisotropic material, having a first major surface and a second major surface and a plurality of openings extending, at least partially, from the first major surface to the second major surface; and a Group IB metal from the periodic table of the elements or other high thermally conductive material filling at least a portion of the space encompassed by at least some of the openings; and optionally, a layer containing a Group IB metal from the periodic table or other high thermally conductive material disposed over at least a portion of the first major surface and at least a portion of the second major surface.
Abstract:
A method of producing a refractory metal powder that includes providing a metal powder containing magnesium tantalate or magnesium niobate; and heating the powder in an inert atmosphere in the presence of magnesium, calcium and/or aluminum to a temperature sufficient to remove magnesium tantalate or magnesium niobate from the powder and/or heating the powder under vacuum to a temperature sufficient to remove magnesium tantalate or magnesium niobate from the powder, the heating steps being performed in any order. The metal powder can be formed into pellets at an appropriate sintering temperature, which can be formed into electrolytic capacitors.
Abstract:
The present invention is a plasma jet generating apparatus that includes a cathode module having a cathode, an anode module having a first passage therethrough and an intermediate module positioned between the cathode and the anode module. The intermediate module includes at least one insert electrically isolated from the anode and cathode modules and defining a second passage in fluid communication between the cathode and the first passage. The first passage can initially converge and then, optionally, diverge in a direction away from the intermediate module. Also or alternatively, the second passage can optionally diverge in a direction toward the anode module. A pilot insert can be positioned between the anode module and the interelectrode insert for the purpose of initiating an electrical arc. A feeding module can be positioned to feed material adjacent the end of the anode module opposite the intermediate module for treatment by the plasma jet.