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    REFRACTORY METAL-DOPED SPUTTERING TARGETS
    4.
    发明申请
    REFRACTORY METAL-DOPED SPUTTERING TARGETS 审中-公开
    耐火金属喷涂目标

    公开(公告)号：WO2009055678A1

    公开(公告)日：2009-04-30

    申请号：PCT/US2008/081126

    申请日：2008-10-24

    Applicant: H.C. STARCK INC. ,  SUN, Shuwei ,  GAYDOS, Mark ,  WU, Richard ,  KUMAR, Prabhat

    Inventor： SUN, Shuwei ,  GAYDOS, Mark ,  WU, Richard ,  KUMAR, Prabhat

    IPC: C23C14/00 ,  G11B5/127

    CPC classification number: C23C14/3414 ,  C22C1/002 ,  C22C1/0425 ,  C22F1/08 ,  C23C14/14 ,  H01B1/02 ,  H01B1/026 ,  Y10T428/31678

    Abstract: Metallic materials consisting essentially of a conductive metal matrix, preferably copper, and a refractory dopant component selected from the group consisting of tantalum, chromium, rhodium, ruthenium, iridium, osmium, platinum, rhenium, niobium, hafnium and mixtures thereof, preferably in an amount of about 0.1 to 6 % by weight based on the metallic material, alloys of such materials, sputtering targets containing the same, methods of making such targets, their use in forming thin films and electronic components containing such thin films.

    Abstract translation: 金属材料基本上由导电金属基体，优选铜和选自钽，铬，铑，钌，铱，锇，铂，铼，铌，铪及其混合物的耐火材料掺杂剂组分组成，优选在 相对于金属材料为约0.1〜6重量％，这些材料的合金，含有该溅射靶的溅射靶，制造这些靶的方法，用于形成薄膜以及含有这种薄膜的电子部件。

    SPUTTERING TARGETS AND DEVICES INCLUDING Mo, Nb, AND Ta, AND METHODS
    5.
    发明申请
    SPUTTERING TARGETS AND DEVICES INCLUDING Mo, Nb, AND Ta, AND METHODS 审中-公开
    溅射目标和装置，包括钼，铌和钽，和方法

    公开(公告)号：WO2016115026A9

    公开(公告)日：2016-07-21

    申请号：PCT/US2016/012824

    申请日：2016-01-11

    Applicant: H.C. STARCK INC.

    Inventor： SUN, Shuwei ,  ROZAK, Gary Alan ,  ZHANG, Qi ,  COX, Barbara ,  LEE, Yen-Te

    IPC: C23C14/08 ,  C23C14/14 ,  C23C14/34 ,  C22C27/04 ,  G06F3/00

    Abstract: Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.

    Abstract translation: 发现包括钼，铌和钽的溅射靶可用于电子器件的溅射膜。 具有约88重量百分比至约97重量百分比的钼的溅射靶具有改进的性能，尤其是对于蚀刻，例如同时蚀刻包括Mo，Nb和Ta的合金层以及金属层（例如铝层）时的性能。 目标对制造触摸屏设备特别有用。

    Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made there from
    7.
    发明公开
    Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made there from 审中-公开
    细粒度，而不是条纹具有均匀随机晶体取向基于薄膜器件及其产品耐火金属溅射靶，制造这种层的方法，和

    公开(公告)号：EP2706129A1

    公开(公告)日：2014-03-12

    申请号：EP13184639.6

    申请日：2008-05-02

    Applicant: H.C. STARCK, Inc. ,  H.C. Starck GmbH

    Inventor： MILLER, Steven ,  KUMAR, Prabhat ,  WU, Richard ,  SUN, Shuwei ,  ZIMMERMANN, Stefan ,  SCHMIDT-PARK, Olaf

    IPC: C23C14/34 ,  H01J35/08 ,  B22F7/00

    CPC classification number: C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

    Abstract: The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction ("EBSD") and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion ("CTE") value between the CTE of the backing plate and the CTE of the layer of sputtering material.; The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.

    Abstract translation: 本发明涉及通过电子背散射衍射（“EBSD”）作为测量并做不显示粒度条带或织构条带在整个主体，其具有小于44微米，不优选的纹理方向精细均匀的等轴晶粒结构的溅射靶 的目标。 本发明涉及具有透镜状的或扁平的晶粒结构，无优选纹理方向的溅射靶通过EBSD作为测量并做不显示晶粒尺寸或织构条带在整个靶的主体，并且其中所述目标具有层状结构包含的一个层 背板的CTE和溅射材料的层的CTE之间的背板接口溅射材料和至少一种另外的层，所述层具有的热膨胀系数（“CTE”）值。 因此，本发明涉及薄膜和它们的使用的溅射靶和其它应用中，颜色的：如涂料，太阳能器件，半导体器件等。本发明进一步涉及一工艺，以修复或重振的溅射靶。

    FINE GRAINED, NON BANDED, REFRACTORY METAL SPUTTERING TARGETS WITH A UNIFORMLY RANDOM CRYSTALLOGRAPHIC ORIENTATION, METHOD FOR MAKING SUCH FILM, AND THIN FILM BASED DEVICES AND PRODUCTS MADE THERE FROM
    8.
    发明公开
    FINE GRAINED, NON BANDED, REFRACTORY METAL SPUTTERING TARGETS WITH A UNIFORMLY RANDOM CRYSTALLOGRAPHIC ORIENTATION, METHOD FOR MAKING SUCH FILM, AND THIN FILM BASED DEVICES AND PRODUCTS MADE THERE FROM 审中-公开
    细晶NICHTZEILIGE难熔金属终端与均匀随机晶体取向，用于生产制作了等薄膜的薄膜和制品基于设备和产品PUTTER

    公开(公告)号：EP2155419A2

    公开(公告)日：2010-02-24

    申请号：EP08755010.9

    申请日：2008-05-02

    Applicant: H.C. Starck Inc. ,  H.C. Starck GmbH

    Inventor： MILLER, Steven, A. ,  KUMAR, Prabhat ,  WU, Richard ,  SUN, Shuwei ,  ZIMMERMANN, Stefan ,  SCHMIDT-PARK, Olaf

    IPC: B22F1/00 ,  C22C1/04 ,  C23C4/12 ,  C23C14/34

    CPC classification number: C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

    Abstract: The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction ("EBSD") and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion ("CTE") value between the CTE of the backing plate and the CTE of the layer of sputtering material.; The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.

    Abstract translation: 本发明涉及通过电子背散射衍射（“EBSD”）作为测量并做不显示粒度条带或织构条带在整个主体，其具有小于44微米，不优选的纹理方向精细均匀的等轴晶粒结构的溅射靶 的目标。 本发明涉及具有透镜状的或扁平的晶粒结构，无优选纹理方向的溅射靶通过EBSD作为测量并做不显示晶粒尺寸或织构条带在整个靶的主体，并且其中所述目标具有层状结构包含的一个层 背板的CTE和溅射材料的层的CTE之间的背板接口溅射材料和至少一种另外的层，所述层具有的热膨胀系数（“CTE”）值。 因此，本发明涉及薄膜和它们的使用的溅射靶和其它应用中，颜色的：如涂料，太阳能器件，半导体器件等。本发明进一步涉及一工艺，以修复或重振的溅射靶。

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