公开(公告)号：WO2016115026A9

公开(公告)日：2016-07-21

申请号：PCT/US2016/012824

申请日：2016-01-11

Applicant: H.C. STARCK INC.

Inventor： SUN, Shuwei ,  ROZAK, Gary Alan ,  ZHANG, Qi ,  COX, Barbara ,  LEE, Yen-Te

IPC: C23C14/08 ,  C23C14/14 ,  C23C14/34 ,  C22C27/04 ,  G06F3/00

Abstract: Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.

Abstract translation: 发现包括钼，铌和钽的溅射靶可用于电子器件的溅射膜。 具有约88重量百分比至约97重量百分比的钼的溅射靶具有改进的性能，尤其是对于蚀刻，例如同时蚀刻包括Mo，Nb和Ta的合金层以及金属层（例如铝层）时的性能。 目标对制造触摸屏设备特别有用。