公开(公告)号：KR1019940001374A

公开(公告)日：1994-01-20

申请号：KR1019920009980

申请日：1992-06-09

Applicant: 한국전자통신연구원 ,  주식회사 케이티

Inventor： 모승기 ,  이대우 ,  윤용선 ,  김보우

IPC: H01L21/28 ,  H01L21/3205

公开(公告)号：KR1019930014798A

公开(公告)日：1993-07-23

申请号：KR1019910024252

申请日：1991-12-24

Applicant: 한국전자통신연구원 ,  주식회사 케이티

Inventor： 윤용선 ,  모승기 ,  이대우 ,  김보우

IPC: H01L21/28

Abstract: 내용 없음

公开(公告)号：KR100062411B1

公开(公告)日：1993-06-03

申请号：KR1019900007228

申请日：1990-05-21

Applicant: 한국전자통신연구원

Inventor： 김윤태 ,  전치훈 ,  이영수 ,  김보우

IPC: H01L21/263

公开(公告)号：KR100058718B1

公开(公告)日：1993-01-25

申请号：KR1019900007229

申请日：1990-05-21

Applicant: 한국전자통신연구원

Inventor： 이영수 ,  김윤태 ,  전치훈 ,  김보우 ,  권오균

IPC: H01L21/205

公开(公告)号：KR1019920010696B1

公开(公告)日：1992-12-12

申请号：KR1019890011950

申请日：1989-08-22

Applicant: 한국전자통신연구원

Inventor： 장원익 ,  김상호 ,  김보우

IPC: H01L21/20

Abstract: The device is used for cooling hot exhaust gas in low- pressure CVD coating device, which is necessary for depositing silicon insulating film in manufacturing semiconductor elements. The device comprises main body (1) having inlet/outlet flanges (1a)(1b) for absorbing or discharging exhaust gas; sealed liquid nitrogen container (3) having inlet (3a) and outlet (3b) and fixed at upper panel (2) on the main body; copper-made spiral coil tube (4) for flowing cooling water; o-ring (6) inserted between the upper panel (2) and lower panel (5).

Abstract translation: 该装置用于冷却在制造半导体元件中沉积硅绝缘膜所需的低压CVD涂覆装置中的热废气。 该装置包括具有用于吸收或排出废气的入口/出口凸缘（1a）（1b）的主体（1） 密封的液氮容器（3），其具有入口（3a）和出口（3b）并固定在主体上的上板（2） 用于流动冷却水的铜制螺旋盘管（4） O形环（6）插入在上面板（2）和下面板（5）之间。

公开(公告)号：KR200068253Y1

公开(公告)日：1992-11-06

申请号：KR2019880022172

申请日：1988-12-30

Applicant: 한국전자통신연구원 ,  주식회사 케이티

Inventor： 김호영 ,  김윤태 ,  이영수 ,  김보우

IPC: H01L21/00

公开(公告)号：KR100056112B1

公开(公告)日：1992-11-06

申请号：KR1019880017986

申请日：1988-12-30

Applicant: 한국전자통신연구원 ,  주식회사 케이티

Inventor： 박성호 ,  강봉구 ,  이영수 ,  김보우 ,  김진섭

IPC: H01L21/00

公开(公告)号：KR2019920008010Y1

公开(公告)日：1992-10-22

申请号：KR2019880022176

申请日：1988-12-30

Applicant: 한국전자통신연구원

Inventor： 김윤태 ,  강봉구 ,  김보우 ,  이영수 ,  전치훈

IPC: H01L21/205

Abstract: 내용 없음.

公开(公告)号：KR1019920004959B1

公开(公告)日：1992-06-22

申请号：KR1019880017973

申请日：1988-12-30

Applicant: 한국전자통신연구원 ,  주식회사 케이티

Inventor： 정기로 ,  장원익 ,  김보우

IPC: H01L21/00

Abstract: The apparatus includes a plurality of pressure sensors (PS1- PS5) for detecting the pressures of the respective reactors to convert them into voltage signals. A power supplying and reading circuit supplies power to the pressure sensors (PS1-PS5), and vacuum valves (V1-V5) are connected to the respective reaction chambers. A throttle valve adjusts the pressure of the reaction chambers, and a vacuum pump produces vacuum within discharge tubes, while an interface board transmits and receives analogue signals representing the pressures of the chambers, to transmit the signals between the power supplying and reading circuit and a throttle valve controller.

Abstract translation: 该装置包括多个压力传感器（PS1-PS5），用于检测各个电抗器的压力以将它们转换为电压信号。 供电和读取电路为压力传感器（PS1-PS5）供电，真空阀（V1-V5）连接到各个反应室。 节流阀调节反应室的压力，真空泵在放电管内产生真空，而接口板传输和接收表示室的压力的模拟信号，以在供电和读取电路之间传输信号和 节流阀控制器。

公开(公告)号：KR1019910007807B1

公开(公告)日：1991-10-02

申请号：KR1019880017978

申请日：1988-12-30

Applicant: 한국전자통신연구원 ,  주식회사 케이티

Inventor： 이종현 ,  장원익 ,  김보우 ,  유형준 ,  배남진

IPC: H01J37/12 ,  H01J37/26

Abstract: The lens used for producing the semiconductor element, enables it to change the lens factors such as clearance, thickness, radius of the electrode, and to improve the focusing characteristics of lens without rebuilding of the whole electrode structure. The equipotential electrostatic lens composed of three electrodes, has the first electrode (100) with insert electrode (110), second electrode (200) with the insert electrode (210), and third electrode (300) with the insert electrode (310). An insert electrode is composed of the plate type electrode (7) laminated with two more plies. The lens suppresses increasing of the excessive voltage according to increasing of ion-beam energy, reduces the danger from electric discharge, and stabilizes the lenses.

Abstract translation: 用于制造半导体元件的透镜使得能够改变诸如间隙，厚度，电极的半径的透镜因子，并且可以改善透镜的聚焦特性，而不会重建整个电极结构。 由三个电极构成的等电位静电透镜具有带有插入电极（110）的第一电极（100），具有插入电极（210）的第二电极（200）和具有插入电极（310）的第三电极（300）。 插入电极由层叠有两层的板状电极（7）组成。 透镜根据离子束能量的增加抑制过大电压的增加，减少放电的危险，并稳定透镜。