公开(公告)号：KR1020010073964A

公开(公告)日：2001-08-03

申请号：KR1020000003184

申请日：2000-01-24

Applicant: 한국전자통신연구원

Inventor： 박성호 ,  이태우 ,  박문평 ,  민병규 ,  이경호

IPC: H01L29/737

Abstract: PURPOSE: A heterojunction compound semiconductor device and a manufacturing method thereof are provided to improve high speed characteristic of an HBT device by decreasing effective capacity between a base and a collector and drastically improving contact capacity between the base and the collector. CONSTITUTION: A buffer layer, a sub collector layer, a collector layer, a base layer, and an emitter layer are consecutively stacked on a semiconductor substrate to manufacture an HBT epitaxial substrate. An emitter electrode and a base electrode are formed on the base layer of the HBT epitaxial substrate and an undoped silicon nitride film is formed on the emitter electrode and the base electrode. The second silicon nitride film doped with Zn is deposited on a front surface of the substrate of the resultant and annealed to diffuse the Zn to the base layer and the collector layer. The Zn-diffused collector layer is etched in a reverse sloping shape and a collector electrode is deposited on the sub collector layer. A nitride insulating film is deposited on the resultant and a metal interconnection(19) is formed. A base surface is exposed through an emitter mesa etching on the HBT epitaxial substrate. A heat resistant meal is deposited on a front surface of the substrate, and selectively removed to form the emitter electrode and the base electrode.

Abstract translation: 目的：提供一种异质结化合物半导体器件及其制造方法，通过降低基极与集电极之间的有效容量，显着提高基极与集电极之间的接触容量，提高HBT器件的高速特性。 构成：缓冲层，副集电极层，集电极层，基极层和发射极层连续堆叠在半导体衬底上以制造HBT外延衬底。 在HBT外延基板的基极层上形成发射电极和基极，在发射电极和基极上形成未掺杂的氮化硅膜。 掺杂有Zn的第二氮化硅膜沉积在所得衬底的前表面上并退火以将Zn扩散到基底层和集电体层。 Zn扩散集电体层以相反的倾斜形状被蚀刻，集电极沉积在副集电极层上。 在所得物上沉积氮化物绝缘膜，形成金属互连（19）。 通过在HBT外延衬底上的发射极台面蚀刻暴露基底表面。 耐热餐具沉积在基板的前表面上，并且选择性地去除以形成发射电极和基极。