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    114.
    发明专利
    未知

    公开(公告)号：AT473199T

    公开(公告)日：2010-07-15

    申请号：AT08172514

    申请日：2008-12-22

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： ROBERT PHILIPPE ,  NGUYEN VALERIE

    IPC: B81C1/00

    Abstract: The method involves forming an upper protection layer (9) on a silicon layer (7), and etching a lower protection layer (5) and the layers (9, 7) between anchoring zones (4) until to attain a single crystal silicon substrate (1), and establishing access path (10) at the substrate. A protection layer (11) is formed on walls formed by etching defined pattern of a mechanical component in the epitactic silicon layer. The component is released from the access path by isotropic etching of the substrate, where the isotropic etching is not attacking the layers (5, 9, 11).

    115.
    发明专利
    未知

    公开(公告)号：DE602007005036D1

    公开(公告)日：2010-04-15

    申请号：DE602007005036

    申请日：2007-03-09

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： ROBERT PHILIPPE ,  HENTZ SEBASTIEN

    IPC: G01P15/125 ,  G01P15/18

    Abstract: The structure has a substrate (10), and a thin deformable elastic membrane (12) suspended above the substrate and integrated to the substrate at its periphery. A seismic mass (M) is suspended above the membrane and is connected to the membrane by a central pin. Capacitive interdigited combs are distributed around the mass and comprise movable armatures (AF1, AF3) integrated to the mass and fixed armatures (AM1, AM3) integrated the substrate.

    119.
    发明专利
    未知

    公开(公告)号：DE602004023457D1

    公开(公告)日：2009-11-19

    申请号：DE602004023457

    申请日：2004-06-29

    Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： ROBERT PHILIPPE ,  ANCEY PASCAL ,  CARUYER GREGORY

    IPC: H03H3/04 ,  H03H9/17

    Abstract: The resonator has a piezoelectric layer (3) placed between two electrodes (1, 2). An electrical heating resistor (9) is placed in thermal contact with the electrode (1). The temporary heating of the electrode (1) permits to partially evaporate a material constituting the electrode (1) to make the electrode (1) thinner for adjusting resonance frequency. An independent claim is also included for a method of producing a thin film bulk acoustic resonator or a solidly mounted resonator.

    120.
    发明专利
    未知

    公开(公告)号：FR2906038B1

    公开(公告)日：2008-11-28

    申请号：FR0608186

    申请日：2006-09-19

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： HENTZ SEBASTIEN ,  NGUYEN VALERIE ,  ROBERT PHILIPPE

    IPC: G01P15/02

    Abstract: The invention relates to a micromachined accelerometer using a movable seismic mass suspended in relation to the substrate by elastic connections only allowing translation in its own plane along a sensitive axis (Oy). The mass acts on at least one elongate resonator by means of a force amplification structure associated with this resonator. The amplification structure comprises a rigid lever arm, a first end of which is connected to the seismic mass by a connection having, in the plane of the mass, a high stiffness in the direction of the sensitive axis (Oy) and a low stiffness in the perpendicular direction, and a second end is connected to an anchor point on the substrate. The second end of the lever arm is a rigid head piece surrounding the anchor point and connected to this anchor point by a rotational connection about a center of rotation. The resonator has one end fixed to the rigid head piece at a point such that the longitudinal axis of the resonator passes a distance h, small in relation to the length L of the lever arm but nonzero, from the center of rotation of the rotational connection.

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