中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

52 records (took 0.027 seconds)

    1.
    发明专利
    未知

    公开(公告)号：DE602004023457D1

    公开(公告)日：2009-11-19

    申请号：DE602004023457

    申请日：2004-06-29

    Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： ROBERT PHILIPPE ,  ANCEY PASCAL ,  CARUYER GREGORY

    IPC: H03H3/04 ,  H03H9/17

    Abstract: The resonator has a piezoelectric layer (3) placed between two electrodes (1, 2). An electrical heating resistor (9) is placed in thermal contact with the electrode (1). The temporary heating of the electrode (1) permits to partially evaporate a material constituting the electrode (1) to make the electrode (1) thinner for adjusting resonance frequency. An independent claim is also included for a method of producing a thin film bulk acoustic resonator or a solidly mounted resonator.

    2.
    发明专利
    未知

    公开(公告)号：DE602005001245D1

    公开(公告)日：2007-07-12

    申请号：DE602005001245

    申请日：2005-09-15

    Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： ANCEY PASCAL ,  ABELE NICOLAS ,  CASSET FABRICE

    IPC: B81B7/02 ,  B81B3/00 ,  B81C1/00

    Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate (10), comprises : (A) some source and drain zones (11, 12) separated by a channel zone (13) extending in a first direction from the source to the drain and in a second direction perpendicular to the first direction; (B) a conducting gate beam (16) placed at least above the channel zone extending in the second direction between some support points placed on the substrate at each side of the channel zone. The surface of the channel zone is hollow and has a form similar to that of the gate beam when it is in maximum deflection towards the channel zone. Independent claims are also included for : (A) a circuit oscillator incorporating this transistor; (B) the fabrication of this transistor with a deformable gate.

    5.
    发明专利
    未知

    公开(公告)号：FR2857785A1

    公开(公告)日：2005-01-21

    申请号：FR0308715

    申请日：2003-07-17

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  ST MICROELECTRONICS SA

    Inventor： ROBERT PHILIPPE ,  ANCEY PASCAL ,  CARUYER GREGORY

    IPC: H03H3/04 ,  H03H9/17 ,  H01L41/047

    Abstract: The resonator has a piezoelectric layer (3) placed between two electrodes (1, 2). An electrical heating resistor (9) is placed in thermal contact with the electrode (1). The temporary heating of the electrode (1) permits to partially evaporate a material constituting the electrode (1) to make the electrode (1) thinner for adjusting resonance frequency. An independent claim is also included for a method of producing a thin film bulk acoustic resonator or a solidly mounted resonator.

    7.
    发明专利
    未知

    公开(公告)号：DE602005001245T2

    公开(公告)日：2008-01-24

    申请号：DE602005001245

    申请日：2005-09-15

    Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： ANCEY PASCAL ,  ABELE NICOLAS ,  CASSET FABRICE

    IPC: B81B7/02 ,  B81B3/00 ,  B81C1/00

    Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate (10), comprises : (A) some source and drain zones (11, 12) separated by a channel zone (13) extending in a first direction from the source to the drain and in a second direction perpendicular to the first direction; (B) a conducting gate beam (16) placed at least above the channel zone extending in the second direction between some support points placed on the substrate at each side of the channel zone. The surface of the channel zone is hollow and has a form similar to that of the gate beam when it is in maximum deflection towards the channel zone. Independent claims are also included for : (A) a circuit oscillator incorporating this transistor; (B) the fabrication of this transistor with a deformable gate.

    9.
    发明专利
    未知

    公开(公告)号：FR2875339B1

    公开(公告)日：2006-12-08

    申请号：FR0452070

    申请日：2004-09-16

    Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： ANCEY PASCAL ,  ABELE NICOLAS ,  CASSET FABRICE

    IPC: H01L29/94 ,  B81B3/00 ,  B81B7/02 ,  B81C1/00 ,  H01L29/84

    Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate (10), comprises : (A) some source and drain zones (11, 12) separated by a channel zone (13) extending in a first direction from the source to the drain and in a second direction perpendicular to the first direction; (B) a conducting gate beam (16) placed at least above the channel zone extending in the second direction between some support points placed on the substrate at each side of the channel zone. The surface of the channel zone is hollow and has a form similar to that of the gate beam when it is in maximum deflection towards the channel zone. Independent claims are also included for : (A) a circuit oscillator incorporating this transistor; (B) the fabrication of this transistor with a deformable gate.

    10.
    发明专利
    未知

    公开(公告)号：DE602005016501D1

    公开(公告)日：2009-10-22

    申请号：DE602005016501

    申请日：2005-07-25

    Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： BOUCHE GUILLAUME ,  ANCEY PASCAL ,  VIALA BERNARD ,  COUDERC SANDRINE

    IPC: H01F41/30 ,  H01F10/00 ,  H01F10/13 ,  H01F10/14 ,  H01F10/32 ,  H01F17/00 ,  H01F41/18 ,  H01L23/552

    Abstract: The method involves nitriding ferromagnetic nanograins rich in iron immersed in an amorphous substrate (SB), and selectively oxidizing the substrate. The nitriding is effectuated by reactive cathodic or ionic sputtering under magnetic field in the presence of nitrogen. The oxidation is effectuated by reactive sputtering in the presence of oxygen. The oxidation and nitriding are carried out simultaneously. Independent claims are also included for the following: (A) a thin soft magnetic film having high magnetization and insulation; and (B) an integrated circuit comprising a component utilizing a membrane incorporating a film.

Patent Agency Ranking