公开(公告)号：EP2497745A3

公开(公告)日：2012-11-07

申请号：EP12170755.8

申请日：2006-08-17

Applicant: Qualcomm Mems Technologies, Inc.

Inventor： Kogut, Lior ,  Zhong, Fan

IPC: B81B3/00 ,  G02B26/00 ,  G02B26/08 ,  B81C1/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.

公开(公告)号：EP2495212A2

公开(公告)日：2012-09-05

申请号：EP12170329.2

申请日：2006-07-20

Applicant: QUALCOMM MEMS Technologies, Inc.

Inventor： The designation of the inventor has not yet been filed

IPC: B81B3/00 ,  G02B26/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.

Abstract translation: MEMS器件的实施例包括通过间隙与导电固定层间隔开的导电可移动层，并由导电可移动层中的上凹部的刚性支撑结构或铆钉支撑，或者由导电可移动层中的凹陷下方的柱支撑。 在某些实施例中，铆钉结构的部分延伸穿过可移动层并接触下面的层。 在其他实施例中，用于形成刚性支撑结构的材料也可以用于钝化与MEMS器件电连接的另外暴露的电引线，从而保护电引线免受损坏或其他干扰。

公开(公告)号：EP2157047A3

公开(公告)日：2012-08-22

申请号：EP08153355.6

申请日：2007-05-16

Applicant: QUALCOMM MEMS Technologies, Inc.

Inventor： Tung, Ming-Hau ,  Kogut, Lior

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.

Abstract translation: 提供了用于控制光调制装置的两层之间的腔的深度的方法和设备。 一种制造光调制器件的方法包括：提供衬底;在衬底的至少一部分上形成牺牲层;在牺牲层的至少一部分上形成反射层;以及在衬底上形成一个或多个挠曲控制器 所述挠曲控制器被构造成可操作地支撑所述反射层并且在移除所述牺牲层时形成与所述牺牲层的厚度可测量地不同的深度的空腔，其中所述深度垂直于所述衬底测量。

公开(公告)号：EP2449670A2

公开(公告)日：2012-05-09

申请号：EP10757630.8

申请日：2010-06-15

Applicant: Freescale Semiconductor, Inc. ,  Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： PERRUCHOT, François ,  LIU, Lianjun ,  PACHECO, Sergio ,  DEFAY, Emmanuel ,  REY, Patrice

IPC: H02N1/00

CPC classification number: B81C1/00666 ,  B81B2203/0118 ,  B81C2201/0167 ,  B81C2201/0169

Abstract: A method of forming an electromechanical transducer device (200) comprises forming (500) on a fixed structure (210) a movable structure (203) and an actuating structure of the electromechanical transducer device, wherein the movable structure (203) is arranged in operation of the electromechanical transducer device (200) to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing (504) a stress trimming layer (216) on at least part of the movable structure (203), after providing the stress trimming layer (216), releasing (506) the movable structure (203) from the fixed structure (210) to provide a released electromechanical transducer device (200), and after releasing the movable structure (203), changing (508) stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure (203) is deflected a predetermined amount relative to the fixed structure (210) when the electromechanical transducer device (200) is in an off state.

公开(公告)号：EP2269201A1

公开(公告)日：2011-01-05

申请号：EP09732707.6

申请日：2009-04-17

Applicant: NXP B.V.

Inventor： FURUKAWA, Yukiko ,  REIMANN, Klaus ,  RENDERS, Christina, Adriana ,  STEENEKEN, Peter, Gerard ,  VAN PIETERSON, Liesbeth ,  LIU, Jin ,  JEDEMA, Friso, Jacobus

IPC: H01G5/18 ,  H01L21/00 ,  H01H59/00 ,  B81C1/00

CPC classification number: H01G5/18 ,  B81B3/0072 ,  B81B2201/0221 ,  B81B2203/0118 ,  B81C2201/0167 ,  H01H1/0094

Abstract: The present invention relates to a MEMS, being developed for e.g. a mobile communication application, such as switch, tunable capacitor, tunable filter, phase shifter, multiplexer, voltage controlled oscillator, and tunable matching network. The volume change of phase-change layer is used for a bi-stable actuation of the MEMS device. The MEMS device comprises at least a bendable cantilever, a phase change layer, and electrodes. A process to implement this device and a method for using is given.

公开(公告)号：EP2157047A2

公开(公告)日：2010-02-24

申请号：EP08153355.6

申请日：2007-05-16

Applicant: QUALCOMM MEMS Technologies, Inc.

Inventor： Tung, Ming-Hau ,  Kogut, Lior

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.

Abstract translation: 提供了用于控制光调制装置的两层之间的腔的深度的方法和装置。 一种制造光调制装置的方法包括提供衬底，在衬底的至少一部分上形成牺牲层，在牺牲层的至少一部分上形成反射层，以及在衬底上形成一个或多个弯曲控制器 所述弯曲控制器被配置为可操作地支撑所述反射层并且在去除所述牺牲层时形成可能与所述牺牲层的厚度可测量的深度的空腔，其中所述深度垂直于所述基板测量。

公开(公告)号：EP2157046A2

公开(公告)日：2010-02-24

申请号：EP08153354.9

申请日：2007-05-16

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC

Inventor： Tung, Ming-Hau ,  Kogut, Lior

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.

公开(公告)号：EP1846320B1

公开(公告)日：2008-06-25

申请号：EP06709238.7

申请日：2006-02-02

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： FLEURY, Gatien ,  CHARVET, Pierre-Louis

IPC: B81B3/00 ,  H01H50/00

CPC classification number: B81C1/00666 ,  B81B2201/016 ,  B81C2201/0167

Abstract: The invention relates to a micromechanical device comprising a mobile beam (1), said beam being attached by the two ends (2) thereof to a rigid frame (3) provided with two arms (4) each having two ends (5). The ends (5) of an arm (4) are respectively fixed to the two ends (2) of the mobile beam (1). Each arm (4) has a central part (6) arranged between the two ends (5) of the corresponding arm (4). A rear face of the central part (6) of each arm (4) is attached to a base support (10). The frame (3) comprises at least one stressed element (11) for adjusting the stressed state of the beam. The stressed element (11) can be centred between the front face and the rear face of the corresponding arm (4). The frame (3) can comprise pairs of front and rear stressed elements (11) which are respectively arranged on the front face and the rear face of the arms (4) in such a way that they face each other.

公开(公告)号：EP1915319A1

公开(公告)日：2008-04-30

申请号：EP06789884.1

申请日：2006-08-17

Applicant: Qualcomm Mems Technologies, Inc.

Inventor： KOGUT, Lior ,  ZHONG, Fan

IPC: B81B3/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.

公开(公告)号：EP1166352B1

公开(公告)日：2008-04-09

申请号：EP99902030.8

申请日：1999-02-04

Applicant: Institute of Microelectronics ,  TYCO Electronics Logistics AG

Inventor： UPPILI, Sridhar ,  VICTOR, D., Samper ,  FOO, Pang, Dow ,  WAGENAAR, Dirk ,  KAY, Krupka ,  SCHLAAK, Helmut

IPC: H01L23/00 ,  H01H59/00

CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  H01H59/0009 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A microstructure relay comprising an s-shaped support member is provided. The s-shape support member creates over-travel in the relay in order to produce high contact force and low contact resistance over the lifetime of the relay. Compressive and tensile stress-inducing layers on appropriate parts of the support member induce it to bend as desired.