公开(公告)号：WO2010103474A1

公开(公告)日：2010-09-16

申请号：PCT/IB2010/051036

申请日：2010-03-10

Applicant: NXP B.V. ,  REIMANN, Klaus ,  ROEST, Aarnoud, Laurens ,  LIU, Jin

Inventor： REIMANN, Klaus ,  ROEST, Aarnoud, Laurens ,  LIU, Jin

IPC: B81B3/00 ,  H01G5/16 ,  H01H1/00 ,  H01G5/011

CPC classification number: H01G5/0136 ,  H01G5/011 ,  H01G5/16

Abstract: A MEMS electrostatic actuator comprises first and second opposing electrode arrangements, wherein at least one of the electrode arrangements is movable. A dielectric material (24) is adjacent the one of the electrode arrangements (22). The second electrode arrangement is patterned such that it includes electrode areas (26) and spaces adjacent the electrode areas, wherein the dielectric material (24) extends at least partially in or over the spaces. The invention uses a multitude of electrode portions as one plate. The electric field lines thus form clusters between the individual electrode portions and the opposing electrode. This arrangement provides an extended range of continuous actuation and tunability.

Abstract translation: MEMS静电致动器包括第一和第二相对电极装置，其中电极装置中的至少一个是可移动的。 电介质材料（24）与电极装置（22）中的一个相邻。 第二电极布置被图案化，使得其包括电极区域（26）和邻近电极区域的空间，其中电介质材料（24）至少部分地延伸到空间中或上方。 本发明使用多个电极部分作为一个板。 因此，电场线在单个电极部分和相对电极之间形成簇。 这种布置提供了连续致动和可调性的扩展范围。

公开(公告)号：WO2009144662A1

公开(公告)日：2009-12-03

申请号：PCT/IB2009/052201

申请日：2009-05-26

Applicant: NXP B.V. ,  LIU, Jin ,  ROEST, Aarnoud ,  ROOZEBOOM, Freddy ,  SHABRO, Vahid

Inventor： LIU, Jin ,  ROEST, Aarnoud ,  ROOZEBOOM, Freddy ,  SHABRO, Vahid

IPC: H01L21/02 ,  H01L21/316

CPC classification number: H01G4/33 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1254 ,  H01L21/31691 ,  H01L28/55

Abstract: A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high- permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance whilst being efficient in utilisation of semiconductor real estate.

Abstract translation: 公开了一种制造沟槽电容器的方法，以及由此制造的沟槽电容器。 该方法涉及使用用于溶胶 - 凝胶膜的真空浸渍方法，以促进高介电常数材料在半导体衬底的沟槽内的有效沉积，以提供具有高电容的沟槽电容器，同时有效地利用半导体 房地产。

公开(公告)号：WO2009128048A1

公开(公告)日：2009-10-22

申请号：PCT/IB2009/051606

申请日：2009-04-17

Applicant: NXP B.V. ,  FURUKAWA, Yukiko ,  REIMANN, Klaus ,  RENDERS, Christina, Adriana ,  STEENEKEN, Peter, Gerard ,  VAN PIETERSON, Liesbeth ,  LIU, Jin ,  JEDEMA, Friso, Jacobus

Inventor： FURUKAWA, Yukiko ,  REIMANN, Klaus ,  RENDERS, Christina, Adriana ,  STEENEKEN, Peter, Gerard ,  VAN PIETERSON, Liesbeth ,  LIU, Jin ,  JEDEMA, Friso, Jacobus

IPC: H01G5/18 ,  H01L21/00 ,  H01H59/00 ,  B81C1/00

CPC classification number: H01G5/18 ,  B81B3/0072 ,  B81B2201/0221 ,  B81B2203/0118 ,  B81C2201/0167 ,  H01H1/0094

Abstract: The present invention relates to a MEMS, being developed for e.g. a mobile communication application, such as switch, tunable capacitor, tunable filter, phase shifter, multiplexer, voltage controlled oscillator, and tunable matching network. The volume change of phase-change layer is used for a bi-stable actuation of the MEMS device. The MEMS device comprises at least a bendable cantilever, a phase change layer, and electrodes. A process to implement this device and a method for using is given.

Abstract translation: 本发明涉及一种开发用于例如MEMS的MEMS。 移动通信应用，如开关，可调电容器，可调滤波器，移相器，多路复用器，压控振荡器和可调匹配网络。 相变层的体积变化用于MEMS器件的双稳态驱动。 MEMS器件至少包括可弯曲悬臂，相变层和电极。 给出了实现该设备的过程和使用方法。

公开(公告)号：EP2406172A1

公开(公告)日：2012-01-18

申请号：EP10710672.6

申请日：2010-03-10

Applicant: NXP B.V.

Inventor： REIMANN, Klaus ,  ROEST, Aarnoud, Laurens ,  LIU, Jin

IPC: B81B3/00 ,  H01G5/16 ,  H01H1/00 ,  H01G5/011

CPC classification number: H01G5/0136 ,  H01G5/011 ,  H01G5/16

Abstract: A MEMS electrostatic actuator comprises first and second opposing electrode arrangements, wherein at least one of the electrode arrangements is movable. A dielectric material (24) is adjacent the one of the electrode arrangements (22). The second electrode arrangement is patterned such that it includes electrode areas (26) and spaces adjacent the electrode areas, wherein the dielectric material (24) extends at least partially in or over the spaces. The invention uses a multitude of electrode portions as one plate. The electric field lines thus form clusters between the individual electrode portions and the opposing electrode. This arrangement provides an extended range of continuous actuation and tunability.

Abstract translation: MEMS静电致动器包括第一和第二相对电极布置，其中至少一个电极布置是可移动的。 电介质材料（24）与电极装置（22）中的一个相邻。 第二电极布置被图案化，使得其包括电极区域（26）和邻近电极区域的空间，其中电介质材料（24）至少部分地延伸到空间中或上方。 本发明使用多个电极部分作为一个板。 因此，电场线在各个电极部分和相对电极之间形成簇。 这种布置提供了连续致动和可调性的延伸范围。

公开(公告)号：EP2269201A1

公开(公告)日：2011-01-05

申请号：EP09732707.6

申请日：2009-04-17

Applicant: NXP B.V.

Inventor： FURUKAWA, Yukiko ,  REIMANN, Klaus ,  RENDERS, Christina, Adriana ,  STEENEKEN, Peter, Gerard ,  VAN PIETERSON, Liesbeth ,  LIU, Jin ,  JEDEMA, Friso, Jacobus

IPC: H01G5/18 ,  H01L21/00 ,  H01H59/00 ,  B81C1/00

CPC classification number: H01G5/18 ,  B81B3/0072 ,  B81B2201/0221 ,  B81B2203/0118 ,  B81C2201/0167 ,  H01H1/0094

Abstract: The present invention relates to a MEMS, being developed for e.g. a mobile communication application, such as switch, tunable capacitor, tunable filter, phase shifter, multiplexer, voltage controlled oscillator, and tunable matching network. The volume change of phase-change layer is used for a bi-stable actuation of the MEMS device. The MEMS device comprises at least a bendable cantilever, a phase change layer, and electrodes. A process to implement this device and a method for using is given.

公开(公告)号：EP2297774A1

公开(公告)日：2011-03-23

申请号：EP09754288.0

申请日：2009-05-26

Applicant: NXP B.V.

Inventor： LIU, Jin ,  ROEST, Aarnoud ,  ROOZEBOOM, Freddy ,  SHABRO, Vahid

IPC: H01L21/02 ,  H01L21/316

CPC classification number: H01G4/33 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1254 ,  H01L21/31691 ,  H01L28/55

Abstract: A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high- permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance whilst being efficient in utilisation of semiconductor real estate.