Abstract:
A memory 200 including an array 201 of rows and columns of memory cells. Row decoder circuitry 211 is provided for selecting in response to a row address a row in array 201 for access. Column decoder circuitry 205 is provided for selecting at least one location within a first group of columns along the selected row in array 201 in response to a column address. At least one shift register 207 is provided for allowing serial access to one of the cells within a second group of columns along the selected row.
Abstract:
A memory (200) is provided which includes a plurality of self-contained memory units (201) for storing data. A plurality of shift registers (211) are provided, each including a first parallel port coupled to a data port of a corresponding one of the self-contained memory units (201). Interconnection circuitry (212) is coupled to a parallel data port of each of the shift registers. Control circuitry (208, 213) is provided which is operable to control the exchange of data between a selected one of the memory units and the interconnection circuitry (212) via the shift register (211) coupled to the selected memory unit (201).
Abstract:
A semiconductor memory circuit includes a memory cell array for storing data, and a bit structure selection circuit for performing a data transfer between the memory cell array and an external device by constructing the data in units of one bit or in units of two bits. The bit structure selection circuit includes a selector for selectively modifying a phase of a first clock signal and a second clock signal in response to a mode signal, and shift register for modifying a shift width of a memory selection signal in response to the first clock signal and the second clock signal supplied through the selector.
Abstract:
A shift register unit, a gate line driving device includes multiple stages of the shift register units, and a driving method for being applied to the shift register unit; the shift register unit includes: an input module (200) connected between an input terminal (INPUT) and a pull-up node (PU), and configured to charge the pull-up node (PU); an output module (205) connected between the pull-up node (PU), a first clock signal terminal (CK) and an output terminal (OUTPUT), and configured to output to the output terminal (OUTPUT) a first clock signal received at the first clock signal terminal (CK); a pull-up node reset module (215) connected between a reset terminal (RESET-IN), a pull-down node (PD) and the pull-up node (PU), and configured to reset the pull-up node (PU); and an output reset module (220) connected between a second clock signal terminal (CKB), the pull-down node (PD) and the output terminal (OUTPUT), and configured to reset the output terminal (OUTPUT). The shift register unit, a gate line driving device and a driving method can downsize an overall structure of the GOA, reduce power consumption, decrease signal delay, improve signal waveform, and also enhance reliability of the GOA circuit in entirety.
Abstract:
Time-constrained data copying between storage media is disclosed. When an electronic device is engaged in real-time operations, multiple data blocks may need to be copied from one storage medium to another storage medium within certain time constraints. In this regard, a data port is operatively controlled by a plurality of registers of a first register bank. The plurality of registers is copied from the first register bank to a second register bank within a temporal limit and while the data port remains under control of the plurality of registers being copied. By copying the plurality of registers within the temporal limit, it is possible to prevent operational interruption in the data port and reduce bandwidth overhead associated with the register copying operation.
Abstract:
A processor includes N-bit registers and a decode unit to receive a multiple register memory access instruction. The multiple register memory access instruction is to indicate a memory location and a register. The processor includes a memory access unit coupled with the decode unit and with the N-bit registers. The memory access unit is to perform a multiple register memory access operation in response to the multiple register memory access instruction. The operation is to involve N-bit data, in each of the N-bit registers comprising the indicated register. The operation is also to involve different corresponding N-bit portions of an M×N-bit line of memory corresponding to the indicated memory location. A total number of bits of the N-bit data in the N-bit registers to be involved in the multiple register memory access operation is to amount to at least half of the M×N-bits of the line of memory.
Abstract:
A memory access scheme employing one or more sets of shift registers interconnected in series to which data may be loaded from or written into one or more memory devices. That is, data from the memory devices may be parallel loaded into the sets of shift registers and then serially shifted through the shift registers until it is output from the sets of shift registers and transferred to its destination. Additionally, the data may be read from and loaded into the memory devices to/from the sets of shift registers such that the shifting of the shift registers is uninterrupted during the reading and/or loading of data. Additionally, data from the memory devices may be loaded into two or more parallel chains of shift registers and then serially shifted through the shift register chains.