公开(公告)号：US5591986A

公开(公告)日：1997-01-07

申请号：US299664

申请日：1994-09-02

Applicant: Minoru Niigaki ,  Toru Hirohata ,  Tuneo Ihara ,  Masami Yamada

Inventor： Minoru Niigaki ,  Toru Hirohata ,  Tuneo Ihara ,  Masami Yamada

IPC: H01J1/34 ,  H01L27/14 ,  H01J31/00 ,  H01L29/49

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.

Abstract translation: 本发明提供了一种光电转换量子效率优异的使用它的高灵敏度电子管和高灵敏度光电检测装置的光电发射装置。 本发明的发光装置被配置为具有用于吸收入射光子以激发光电子的光子吸收层，层叠在光子吸收层的一个表面上的绝缘体层，层叠在绝缘体层上的引线电极和形成在 光子吸收层的另一个表面，以在引线电极和光子吸收层的另一个表面之间施加预定的极性电压，由此进入光子吸收层并朝向一侧移动的入射光子激发的光电子被制成 由形成在引线电极和一个表面之间的电场发射预定的极性电压。

公开(公告)号：US5523572A

公开(公告)日：1996-06-04

申请号：US410760

申请日：1995-03-27

Applicant: Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

Inventor： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J3/02 ,  H01J37/00

CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

Abstract translation: 一种生产高自旋极化电子束的方法，包括以下步骤：向包括具有第一晶格常数的第一化合物半导体层和具有不同于第一晶格常数的第二晶格常数的第二化合物半导体层的半导体器件施加光能 晶格常数，所述第二半导体层与所述第一半导体层接触接触以提供应变的半导体异质结构，所述第一和第二晶格常数之间的失配量的大小限定了所述第一和第二晶格常数之间的重孔带和所述光孔带之间的能量分裂 第二半导体层，使得能量分裂大于使用中的第二半导体层中的热噪声能量; 以及在接收到光能时从第二半导体层提取高自旋极化的电子束。 一种半导体器件，用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的并具有第一晶格常数的第一化合物半导体层的高度自旋极化的电子束; 以及设置在所述第一半导体层上的第二化合物半导体层，所述第二半导体层具有与所述第一晶格常数不同的第二晶格常数和小于所述第一半导体层的厚度的厚度t。

公开(公告)号：US5404026A

公开(公告)日：1995-04-04

申请号：US004766

申请日：1993-01-14

Applicant: Raymond P. Mariella, Jr. ,  Gregory A. Cooper

Inventor： Raymond P. Mariella, Jr. ,  Gregory A. Cooper

IPC: H01J1/34 ,  H01L29/161 ,  H01L29/205

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A single-crystal, multi-layer device incorporating an IR absorbing layer that is compositionally different from the Ga.sub.x Al.sub.1-x Sb layer which acts as the electron emitter. Many different IR absorbing layers can be envisioned for use in this embodiment, limited only by the ability to grow quality material on a chosen substrate. A non-exclusive list of possible IR absorbing layers would include GaSb, InAs and InAs/Ga.sub.w In.sub.y Al.sub.1-y-w Sb superlattices. The absorption of the IR photon excites an electron into the conduction band of the IR absorber. An externally applied electric field then transports electrons from the conduction band of the absorber into the conduction band of the Ga.sub.x Al.sub.1-x Sb, from which they are ejected into vacuum. Because the band alignments of Ga.sub.x Al.sub.1-x Sb can be made the same as that of GaAs, emitting efficiencies comparable to GaAs photocathodes are obtainable. The present invention provides a photocathode that is responsive to wavelengths within the range of 0.9 .mu.m to at least 10 .mu.m.

Abstract translation: 结合了IR吸收层的单晶多层器件，该吸收层在组成上不同于充当电子发射体的GaxAl1-xSb层。 可以设想许多不同的IR吸收层用于该实施方案中，这仅限于在所选择的基底上生长优质材料的能力。 可能的IR吸收层的非排他性列表将包括GaSb，InAs和InAs / GawInyAl1-y-wSb超晶格。 IR光子的吸收激发电子进入IR吸收体的导带。 外部施加的电场然后将电子从吸收器的导带传输到GaxAl1-xSb的导带，从它们被喷射到真空中。 因为GaxAl1-xSb的带对准可以与GaAs相同，所以可获得与GaAs光电阴极相当的发射效率。 本发明提供一种响应波长在0.9μm至至少10μm之间的光电阴极。

公开(公告)号：US5136212A

公开(公告)日：1992-08-04

申请号：US804517

申请日：1991-12-10

Applicant: Ken Eguchi ,  Haruki Kawada ,  Kunihiro Sakai ,  Hiroshi Matsuda ,  Kiyoshi Takimoto ,  Hisaaki Kawade ,  Yuko Morikawa ,  Yoshihiro Yanagisawa

Inventor： Ken Eguchi ,  Haruki Kawada ,  Kunihiro Sakai ,  Hiroshi Matsuda ,  Kiyoshi Takimoto ,  Hisaaki Kawade ,  Yuko Morikawa ,  Yoshihiro Yanagisawa

IPC: H01J1/30 ,  H01J1/34

CPC classification number: H01J1/34 ,  H01J1/30 ,  H01J2201/3423

Abstract: An electron emitting device, comprising: a first electrode provided on a substrate; a first layer provided on said electrode and capable of undergoing transition from an electrically high resistance state to a low resistance state when irradiated by a radiant ray; and a conductive layer, an insulating layer and a second electrode, laminated on said first layer. An electron generator includes the electron emitting device as well as an applicator for applying an electric field to said device, and an irradiator for irradiating a radiant ray on the device. A method for driving the electron emitting device is also provided.

Abstract translation: 一种电子发射器件，包括：设置在衬底上的第一电极; 第一层，设置在所述电极上，并且当由辐射线照射时能够从电阻高的状态转变为低电阻状态; 以及层压在所述第一层上的导电层，绝缘层和第二电极。 电子发生器包括电子发射器件以及用于向所述器件施加电场的施加器，以及用于在器件上照射辐射线的辐照器。 还提供了一种用于驱动电子发射器件的方法。

公开(公告)号：US5047821A

公开(公告)日：1991-09-10

申请号：US494044

申请日：1990-03-15

Applicant: Kenneth A. Costello ,  William E. Spicer ,  Verle W. Aebi

Inventor： Kenneth A. Costello ,  William E. Spicer ,  Verle W. Aebi

IPC: H01J1/34 ,  H01L31/108

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: An improved transferred electron III-V semiconductor photocathode comprising an aluminum contact pad and an aluminum grid structure that improves quantum efficiency by removing a major obstacle to electrons escaping into the vacuum and controls dark spot blooming caused by overly bright photon emission sources.

Abstract translation: 一种改进的转移电子III-V半导体光电阴极，其包括铝接触焊盘和铝格栅结构，其通过去除逃逸到真空中的电子的主要障碍并控制由过亮的光子发射源引起的暗斑开花，从而提高量子效率。

公开(公告)号：US4749903A

公开(公告)日：1988-06-07

申请号：US934481

申请日：1986-11-24

Applicant: Bernard Munier ,  Paul de Groot ,  Claude Weibuch ,  Yves Henry

Inventor： Bernard Munier ,  Paul de Groot ,  Claude Weibuch ,  Yves Henry

IPC: H01J1/34 ,  H01J31/10 ,  H01J31/26

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: In one example of construction, a high-performance photocathode has the following structure:a transparent layer formed of P.sup.+ type semiconductor material having a forbidden band of sufficient width to ensure that this layer is transparent to the photons of the light to be detected;an absorption layer constituted by ten first sublayers formed of P.sup.+ type semiconductor material with a forbidden band of sufficiently small width to have two-dimensional electronic properties in order to achieve efficient conversion of the photons into electron-hole pairs and by ten second sublayers interposed between the first and formed of the same material as the transparent layer, the second sublayers being sufficiently thin to permit passage of electrons by tunnel effect and the thickness of the first sublayers being sufficient to permit absorption of the photons of all wavelengths of the light to be detected;a transport layer formed of the same material as the first sublayers;a layer of Cs+O for reducing the energy-gap potential so as to permit emission of electrons into vacuum.

Abstract translation: 在一个结构实例中，高性能光电阴极具有以下结构：由具有足够宽度的禁带的P +型半导体材料形成的透明层，以确保该层对待检测光的光子是透明的; 吸收层由由具有足够小宽度的禁带的P +型半导体材料形成的10个第一子层构成，以具有二维电子特性，以便实现光子有效转换成电子 - 空穴对，以及十分之二的子层，介于 第一层并且由与透明层相同的材料形成，第二子层足够薄以允许通过隧道效应使电子通过，并且第一子层的厚度足以允许所有波长的光的光子吸收为 检测到 由与第一子层相同的材料形成的输送层; 一层用于降低能隙电位的Cs + O，以允许电子发射成真空。

公开(公告)号：US4722852A

公开(公告)日：1988-02-02

申请号：US52294

申请日：1987-05-21

Applicant: Arthur M. E. Hoeberechts ,  Henricus A. M. van Hal ,  Harm Tolner ,  Gerardus G. P. van Gorkom

Inventor： Arthur M. E. Hoeberechts ,  Henricus A. M. van Hal ,  Harm Tolner ,  Gerardus G. P. van Gorkom

IPC: H01J1/30 ,  H01J1/13 ,  H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J9/02 ,  H01J9/04 ,  H01J9/12 ,  C23C14/00

CPC classification number: H01J1/32 ,  H01J1/13 ,  H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: An electron-emitting surface is provided with a material reducing the electron work function, which is obtained from a suitable reaction. The reaction mixture or the product to be decomposed, for example CsN.sub.3, is present in a surface depression of a semiconductor body, while one or more pn junctions act as a heating diode. Upon heating, cesium is released and deposited on the electron-emitting surface.

Abstract translation: 电子发射表面设置有从合适的反应获得的降低电子功函数的材料。 反应混合物或待分解的产物（例如CsN 3）存在于半导体本体的表面凹陷中，而一个或多个pn结用作加热二极管。 加热时，铯释放并沉积在电子发射表面上。

公开(公告)号：US4683399A

公开(公告)日：1987-07-28

申请号：US278528

申请日：1981-06-29

Applicant: Sidney I. Soclof

Inventor： Sidney I. Soclof

IPC: H01J40/02 ,  H01J1/308 ,  H01J1/34 ,  H01J47/00 ,  H01L29/90 ,  H01J40/16

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: A vacuum electron device including a semiconductor device in a hermetically sealed container enclosing a vacuum. The device includes an electron emissive source for emitting electrons into the vacuum, and a collector for collecting electrons emitted from the electron emissive source and tranported through the vacuum. The device is subjected to a high internal electric field such that electrons in the emissive source are excited to energies greater than the electron affinity of the semiconductor body.

Abstract translation: 一种真空电子器件，其包括封闭真空的密封容器中的半导体器件。 该装置包括用于将电子发射到真空中的电子发射源，以及用于收集从电子发射源发射并传送通过真空的电子的收集器。 该器件受到高内部电场，使得发射源中的电子被激发到大于半导体本体的电子亲和力的能量。

公开(公告)号：US4644221A

公开(公告)日：1987-02-17

申请号：US260959

申请日：1981-05-06

Applicant: William A. Gutierrez ,  Herbert L. Wilson

Inventor： William A. Gutierrez ,  Herbert L. Wilson

IPC: H01J1/34 ,  H01J9/12 ,  H01L31/18 ,  H01J31/00 ,  H01J31/26

CPC classification number: H01L31/18 ,  H01J1/34 ,  H01J9/12 ,  H01J2201/3423

Abstract: A method of forming a variable sensitivity transmission mode negative eleon affinity (NEA) photocathode in which the sensitivity of the photocathode to white or monochromatic light can be varied by varying the backsurface recombination velocity of the photoemitting material with an electric field. The basic structure of the photocathode is comprised of a Group III-V element photoemitter on a larger bandgap Group III-V element window substrate.

Abstract translation: 形成可变灵敏度透射模式负电子亲合力（NEA）光电阴极的方法，其中光电阴极对白色或单色光的灵敏度可以通过用电场改变光发射材料的背表面复合速度来改变。 光电阴极的基本结构由III-V族III族元素光电发射器组成。

公开(公告)号：US4107564A

公开(公告)日：1978-08-15

申请号：US579227

申请日：1975-05-20

Applicant: Alexandr Ivanovich Klimin ,  Alexandr Alexeevich Mostovsky ,  Rafail Lvovich Nemchenok

Inventor： Alexandr Ivanovich Klimin ,  Alexandr Alexeevich Mostovsky ,  Rafail Lvovich Nemchenok

IPC: H01J9/233 ,  H01J1/34 ,  H01J9/12 ,  H01J40/06 ,  H01L31/00 ,  H01J39/00 ,  H01J39/06

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photoemitter sensitive in the optical range of wavelengths comprises, according to the invention, a substrate made from p-type semiconductor materials of a group of chemical compounds A.sup.II B.sup.IV C.sub.2.sup.V, where A.sup.II are elements belonging to the second subgroup of group II: zinc and cadmium, B.sup.IV are elements belonging to the second subgroup of group IV: germanium, silicon and tin, C.sub.2.sup.V are elements belonging to the second subgroup of group V: phosphorus and arsenic, and a coating of cesium and oxygen. Homogeneity of the bulk and surface properties of the emitter substrate provides high sensitivity in the near-threshold region of photosensitivity corresponding to the width of the forbidden band of the photoemitter substrate.

Abstract translation: 根据本发明，在波长的光学范围内敏感的光电探测器包括由一组化合物AIIBIVC2V的p型半导体材料制成的衬底，其中AII是属于第二组的第二亚组的元素：锌和镉， BIV是属于第IV组第二亚组的元素：锗，硅和锡，C2V是属于第V族第二亚组的元素：磷和砷，以及铯和氧的涂层。 发射极衬底的体积和表面性质的均匀性在对应于光发射器衬底的禁带的宽度的光敏性的近阈值区域中提供高灵敏度。