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121.
公开(公告)号:US20240119582A1
公开(公告)日:2024-04-11
申请号:US18276018
申请日:2022-01-31
Applicant: ASML NETHERLANDS B.V.
Inventor: Quan ZHANG , Been-Der CHEN , Wei-chun Fong , Zhangnan ZHU , Robert Elliott BOONE
CPC classification number: G06T7/001 , G03F1/36 , G06T2207/20081 , G06T2207/20212 , G06T2207/30148
Abstract: Described are embodiments for generating a post-optical proximity correction (OPC) result for a mask using a target pattern and reference layer patterns. Images of the target pattern and reference layers are provided as an input to a machine learning (ML) model to generate a post-OPC image. The images may be input separately or combined into a composite image (e.g., using a linear function) and input to the ML model. The images are rendered from pattern data. For example, a target pattern image is rendered from a target pattern to be printed on a substrate, and a reference layer image such as dummy pattern image is rendered from dummy pattern. The ML model is trained to generate the post-OPC image using multiple images associated with target patterns and reference layers, and using a reference post-OPC image of the target pattern. The post-OPC image may be used to generate a post-OPC mask.
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公开(公告)号:US20240119212A1
公开(公告)日:2024-04-11
申请号:US18277014
申请日:2022-02-25
Applicant: ASML NETHERLANDS B.V.
Inventor: Jung Hoon SER , Sungwoon PARK , Xin LEI , Jinwoong JEONG , Rongkuo ZHAO , Duan-Fu Stephen HSU , Xiaoyang LI
IPC: G06F30/392 , G06F30/398
CPC classification number: G06F30/392 , G06F30/398 , G06F2119/02
Abstract: Methods for configuring a patterning process based on results of another patterning process is described. The method includes obtaining a first set of contours by simulating a first patterning process using a design layout in a first orientation. The contours satisfy a design specification associated with the design layout and correspond to a first set of process window conditions. A second patterning process is configured based on a second orientation of the design layout, the first set of process window conditions and the first set of contours. The second patterning process is associated with one or more design variables (e.g., illumination, mask pattern) that affect a second set of contours. The configuring includes adjusting one or more design variables until the second set of contours are within a desired matching threshold with the first set of contours.
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123.
公开(公告)号:US20240111221A1
公开(公告)日:2024-04-04
申请号:US18275663
申请日:2022-01-12
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/00
CPC classification number: G03F7/706841 , G03F7/70633 , G03F7/706831
Abstract: A method of determining a measurement recipe for measurement of in-die targets located within one or more die areas of an exposure field. The method includes obtaining first measurement data relating to measurement of a plurality of reference targets and second measurement data relating to measurement of a plurality of in-die targets, the targets having respective different overlay biases and measured using a plurality of different acquisition settings for acquiring the measurement data. One or more machine learning models are trained using the first measurement data to obtain a plurality of candidate measurement recipes, wherein the candidate measurement recipes include a plurality of combinations of a trained machine learned model and a corresponding acquisition setting; and a preferred measurement recipe is determined from the candidate measurement recipes using the second measurement data.
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公开(公告)号:US20240111214A1
公开(公告)日:2024-04-04
申请号:US18274990
申请日:2021-12-20
Applicant: ASML Netherlands B.V.
IPC: G03F7/20
CPC classification number: G03F7/20
Abstract: A method for representing control parameter data for controlling a lithographic apparatus during a scanning exposure of an exposure field on a substrate, the method including: obtaining a set of periodic base functions, each base function out of the set of periodic base functions having a different frequency and a period smaller than a dimension associated with the exposure field across which the lithographic apparatus needs to be controlled; obtaining the control parameter data; and determining a representation of the control parameter data using the set of periodic base functions.
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公开(公告)号:US11947269B2
公开(公告)日:2024-04-02
申请号:US17497087
申请日:2021-10-08
Applicant: ASML NETHERLANDS B.V.
Inventor: Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Thomas Theeuwes , Maria Isabel De La Fuente Valentin , Mir Homayoun Shahrjerdy , Arie Jeffrey Den Boef , Shu-jin Wang
CPC classification number: G03F7/70633 , G03F7/70625 , G03F7/70683 , G06T7/0006 , G03F7/20 , G06T2207/30148
Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
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公开(公告)号:US11942304B2
公开(公告)日:2024-03-26
申请号:US17856848
申请日:2022-07-01
Applicant: ASML NETHERLANDS B.V.
Inventor: Yongxin Wang , Zhonghua Dong , Rui-Ling Lai
IPC: H01J37/244 , H01L27/146
CPC classification number: H01J37/244 , H01L27/14603 , H01L27/14609 , H01J2237/2446
Abstract: Systems and methods for implementing a detector array are disclosed. According to certain embodiments, a substrate comprises a plurality of sensing elements including a first element and a second element, and a switching region therebetween configured to connect the first element and the second element. The switching region may be controlled based on signals generated in response to the sensing elements receiving electrons with a predetermined amount of energy.
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127.
公开(公告)号:US11940740B2
公开(公告)日:2024-03-26
申请号:US17836099
申请日:2022-06-09
Applicant: ASML Netherlands B.V.
Inventor: Alexander Ypma , Jasper Menger , David Deckers , David Han , Adrianus Cornelis Matheus Koopman , Irina Lyulina , Scott Anderson Middlebrooks , Richard Johannes Franciscus Van Haren , Jochem Sebastiaan Wildenberg
CPC classification number: G03F7/706837 , G03F7/70525 , G03F7/70616 , G03F9/7092 , G06F16/26
Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.
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公开(公告)号:US11940739B2
公开(公告)日:2024-03-26
申请号:US17562446
申请日:2021-12-27
Applicant: ASML Netherlands B.V.
Inventor: Nitesh Pandey , Arie Jeffrey Den Boef , Duygu Akbulut , Marinus Johannes Maria Van Dam , Hans Butler , Hugo Augustinus Joseph Cramer , Engelbertus Antonius Fransiscus Van Der Pasch , Ferry Zijp , Jeroen Arnoldus Leonardus Johannes Raaymakers , Marinus Petrus Reijnders
IPC: G03F7/20 , G01N21/956 , G03F7/00
CPC classification number: G03F7/70625 , G01N21/956 , G03F7/7015 , G03F7/70633
Abstract: A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.
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公开(公告)号:US20240096589A1
公开(公告)日:2024-03-21
申请号:US18038206
申请日:2021-10-26
Applicant: ASML Netherlands B.V.
Inventor: Stoyan NIHTIANOV , Kenichi KANAI , Padmakumar RAMACHANDRA RAO
IPC: H01J37/244
CPC classification number: H01J37/244 , H01J2237/2441 , H01J2237/2446 , H01J2237/24495
Abstract: A detector may be provided for a charged particle apparatus comprising:
a sensing element including a diode; and
a circuit configured to detect an electron event caused by an electron impacting the sensing element,
wherein the circuit comprises a voltage monitoring device and a reset device,
wherein the reset device is configured to regularly reset the diode by setting a voltage across the diode to a predetermined value,
and wherein the voltage monitoring device is connected to the diode to monitor a voltage across the diode in between resets.-
公开(公告)号:US20240087835A1
公开(公告)日:2024-03-14
申请号:US18517642
申请日:2023-11-22
Applicant: ASML Netherlands B.V.
Inventor: Albertus Victor Gerardus MANGNUS
CPC classification number: H01J37/05 , H01J37/12 , H01J37/21 , H01J2237/036 , H01J2237/04756 , H01J2237/151 , H01J2237/216
Abstract: The present disclosure provides a charged particle optical device for a charged particle system. The device projects an array of charged particle beams towards a sample. The device comprises a control lens array to control a parameter of the array of beams; and an objective lens array to project the array of beams onto the sample, the objective lens array being down beam of the control lens. The objective lens array comprises: an upper electrode; and a lower electrode arrangement that comprises an up-beam electrode and a down-beam electrode. The device is configured to apply an upper potential to the upper electrode, an up-beam potential to the up-beam electrode and a down-beam potential to the down-beam electrode. The potentials are controlled to control the landing energy of the beams on the sample and. to maintain focus of the beams on the sample at the landing energies.
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