CONFIGURATION OF PATTERNING PROCESS
    122.
    发明公开

    公开(公告)号:US20240119212A1

    公开(公告)日:2024-04-11

    申请号:US18277014

    申请日:2022-02-25

    CPC classification number: G06F30/392 G06F30/398 G06F2119/02

    Abstract: Methods for configuring a patterning process based on results of another patterning process is described. The method includes obtaining a first set of contours by simulating a first patterning process using a design layout in a first orientation. The contours satisfy a design specification associated with the design layout and correspond to a first set of process window conditions. A second patterning process is configured based on a second orientation of the design layout, the first set of process window conditions and the first set of contours. The second patterning process is associated with one or more design variables (e.g., illumination, mask pattern) that affect a second set of contours. The configuring includes adjusting one or more design variables until the second set of contours are within a desired matching threshold with the first set of contours.

    A METHOD OF DETERMINING A MEASUREMENT RECIPE AND ASSOCIATED METROLOGY METHODS AND APPARATUSES

    公开(公告)号:US20240111221A1

    公开(公告)日:2024-04-04

    申请号:US18275663

    申请日:2022-01-12

    CPC classification number: G03F7/706841 G03F7/70633 G03F7/706831

    Abstract: A method of determining a measurement recipe for measurement of in-die targets located within one or more die areas of an exposure field. The method includes obtaining first measurement data relating to measurement of a plurality of reference targets and second measurement data relating to measurement of a plurality of in-die targets, the targets having respective different overlay biases and measured using a plurality of different acquisition settings for acquiring the measurement data. One or more machine learning models are trained using the first measurement data to obtain a plurality of candidate measurement recipes, wherein the candidate measurement recipes include a plurality of combinations of a trained machine learned model and a corresponding acquisition setting; and a preferred measurement recipe is determined from the candidate measurement recipes using the second measurement data.

    NOVEL INTERFACE DEFINITION FOR LITHOGRAPHIC APPARATUS

    公开(公告)号:US20240111214A1

    公开(公告)日:2024-04-04

    申请号:US18274990

    申请日:2021-12-20

    CPC classification number: G03F7/20

    Abstract: A method for representing control parameter data for controlling a lithographic apparatus during a scanning exposure of an exposure field on a substrate, the method including: obtaining a set of periodic base functions, each base function out of the set of periodic base functions having a different frequency and a period smaller than a dimension associated with the exposure field across which the lithographic apparatus needs to be controlled; obtaining the control parameter data; and determining a representation of the control parameter data using the set of periodic base functions.

    CHARGED PARTICLE DEVICE AND METHOD
    130.
    发明公开

    公开(公告)号:US20240087835A1

    公开(公告)日:2024-03-14

    申请号:US18517642

    申请日:2023-11-22

    Abstract: The present disclosure provides a charged particle optical device for a charged particle system. The device projects an array of charged particle beams towards a sample. The device comprises a control lens array to control a parameter of the array of beams; and an objective lens array to project the array of beams onto the sample, the objective lens array being down beam of the control lens. The objective lens array comprises: an upper electrode; and a lower electrode arrangement that comprises an up-beam electrode and a down-beam electrode. The device is configured to apply an upper potential to the upper electrode, an up-beam potential to the up-beam electrode and a down-beam potential to the down-beam electrode. The potentials are controlled to control the landing energy of the beams on the sample and. to maintain focus of the beams on the sample at the landing energies.

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