公开(公告)号：EP1542368A1

公开(公告)日：2005-06-15

申请号：EP03293074.5

申请日：2003-12-09

Applicant: STMicroelectronics N.V.

Inventor： Wellig, Armin ,  Zory, Julien

IPC: H03M13/27

CPC classification number: H03M13/2778 ,  H03M13/2707 ,  H03M13/276 ,  H04L1/0071

Abstract: The invention relates to de-interleaving successive sequences of interleaved data samples extracted from a virtual memory having L0 columns and C0 rows, in particular for high-throughput applications. The method comprises the steps of:

receiving each sequence of said interleaved data samples and writing row by row said received sequences of interleaved data samples in a de-interleaving memory array (2) having L rows and C columns, L being superior or equal to L0 and C being superior or equal to C0, and
de-interleaving the data samples stored in said de-interleaving memory array (2) sub-array by sub-array, the used predetermined sub-array being a square cluster array having a predetermined number SQ of rows and columns, the number L of rows and the number C of columns of the de-interleaving memory array (2) being multiples of the number SQ of rows and columns. De-interleaving the de-interleaving memory array (2) sub-array by sub-array allows to avoid memory re-use bottleneck and allows to decrease memory access rate.

Abstract translation: 本发明涉及一种去交错从具有C0，特别是用于高通量应用L0的列和行的虚拟存储器中提取交织后的数据样本的连续序列。 该方法包括以下步骤：接收所述交错数据样本的每个序列，并通过行写入行所述交错数据样本的接收序列中的去交织存储器阵列，具有L行和C列（2），L是大于或等于 L0和C是大于或等于C0，和去交织由子阵列存储在所述去交织存储器阵列（2）子阵列的数据样本，所使用的预定的子阵列是具有预定的正方形簇阵列 SQ数量的行和列，行的数目L和（2）是行数和列数的倍数SQ C中的解交织存储器阵列的列数。 解交织的解交织的存储器阵列（2）子阵列由子阵列允许避免存储器的再利用和瓶颈允许以降低存储器存取速率。

公开(公告)号：EP1535340A1

公开(公告)日：2005-06-01

申请号：EP03763834.3

申请日：2003-07-14

Applicant: STMicroelectronics N.V.

Inventor： RIEVE, Peter ,  WALDER, Marcus ,  SEIBEL, Konstantin ,  PRIMA, Jens ,  MIRHAMED, Arash

IPC: H01L27/146 ,  H01L31/105

CPC classification number: H01L31/1055 ,  H01L27/14665

Abstract: The invention relates to a TFA image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent with an intermetal dielectric, on which, in the region of the pixel matrix, a lower barrier layer (metal 2) is situated and a conductive layer (metal 2) is situated on said barrier layer, and vias being provided for the contact connection to the ASIC, said vias in metal contacts on the ASIC.The invention is based on the object of providing a TFA image sensor having improved electrical properties. This is achieved in that an intrinsic absorption layer (i) is provided between the TCO layer and the barrier layer (metal 2) with a layer thickness of between 300 nm and 600 nm. Before the application of the photodiodes, the topmost, comparatively thick metal layer of the ASIC is removed and replaced by a matrix of thin metal electrodes which form the back electrodes of the photodiodes, said matrix being patterned in the pixel raster.

公开(公告)号：EP1306978B1

公开(公告)日：2005-05-25

申请号：EP01125321.8

申请日：2001-10-26

Applicant: STMicroelectronics N.V.

Inventor： Conti, Patrick

IPC: H04B1/30 ,  H04L25/06

CPC classification number: H04B1/30 ,  H04L25/062 ,  H04L27/22

公开(公告)号：EP1344393B1

公开(公告)日：2004-09-29

申请号：EP01991867.1

申请日：2001-12-18

Applicant: STMicroelectronics N.V.

Inventor： BENTHIEN, Stephan

IPC: H04N3/15

CPC classification number: H04N5/3591 ,  H04N5/374

Abstract: The invention relates to an image sensor device consisting of a substrate which is especially developed using CMOS technology, and has an integrated semiconductor structure (ASIC) and an optically active thin layer structure which is arranged on the same and consists respectively of at least one layer of doped and undoped amorphous silicon. In the horizontal plane, spatially adjacent image elements (pixels) are respectively formed, said image elements respectively comprising an optoelectronic converter for converting incident light into an electrical current which is proportional to the incident light quantity, in addition to a charge-coupled memory which is associated with the optoelectronic converter. The charge state of said charge-coupled memory can be varied according to the incident light on the associated optoelectronic converter. The aim of the invention is to avoid image distortion in an individual pixel due to a transition of the optoelectronic converter from a blocked state. To this end, first and second dividing means are associated with the charge-coupled memory in order to respectively define an upper and a lower charge limiting value.

公开(公告)号：EP1455498A1

公开(公告)日：2004-09-08

申请号：EP03290537.4

申请日：2003-03-06

Applicant: STMicroelectronics N.V.

Inventor： Smaini, Lydi ,  Helal, Didier

IPC: H04L25/49 ,  H04B1/69

CPC classification number: H04B1/7174 ,  H04L25/4902

Abstract: On délivre à une fréquence de délivrance Fe supérieure à une fréquence PRF prédéterminée, des groupes successifs de N bits, l'un au moins de ces groupes comportant au moins un sous-groupe d'au moins un bit définissant au moins une information numérique de position et de forme d'au moins une impulsion de base située à l'intérieur d'une fenêtre de longueur 1/PRF, on convertit (MCV) cette information numérique en ladite impulsion de base, et on filtre (FLT) ladite impulsion de base dans un filtre au moins passe-haut adapté de façon à délivrer une impulsion filtrée du type à bande ultra large positionnée à l'intérieur de ladite fenêtre avec une précision temporelle égale à 1/N.Fe.

Abstract translation: 该方法涉及以高于预定频率（PRF）的传输频率发送连续的N位组，其中组具有定义位于长度为1 / PRF的窗口内的基本脉冲的位置和形状的位的子组。 信息被转换成在自适应高通滤波器中滤波的基本脉冲，以超宽带传输脉冲。 还包括以下独立权利要求：（a）用于发送具有超宽带类型的脉冲信号的脉冲发生装置（b）无线传输系统终端。

公开(公告)号：EP1438750A1

公开(公告)日：2004-07-21

申请号：EP02782737.7

申请日：2002-10-21

Applicant: STMicroelectronics N.V.

Inventor： SCHOLZ, Markus ,  RIEVE, Peter ,  WAGNER, Michael ,  LULE, Tarek ,  SEIBEL, Konstantin ,  PRIMA, Jens ,  BENTHIEN, Stephan ,  SOMMER, Michael

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/0376

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L31/02162 ,  H01L31/0376 ,  Y02E10/50

Abstract: The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix (6) is arranged on an ASIC switching circuit (12) provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit (12). The aim of the inventive method is to enable conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. To this end, the CMOS passivation layer (1) in the photoactive region and then the upper CMOS metallisation (2) are removed and replaced by a metallic layer (4) which is structured in the pixel raster, for the formation of back electrodes (5). The photo diode matrix (6) is then applied and structured, said photo diode matrix (6) being embodied as a pixel matrix, on which a passivating protective layer (10) and/or a colour filter layer (8) having a passivating action can be applied.

公开(公告)号：EP1414158A1

公开(公告)日：2004-04-28

申请号：EP02023841.6

申请日：2002-10-24

Applicant: STMicroelectronics N.V.

Inventor： Berens, Friedbert ,  Messina, Ettore ,  Kirsch, Miguel

IPC: H03M13/29 ,  H04Q7/38

CPC classification number: H03M13/3911 ,  H03M13/2957 ,  H03M13/612 ,  H04L1/005 ,  H04L1/0055 ,  H04L1/0066

Abstract: The method comprises a step of dynamically determining a quality information representative of the conditions of the channel state estimation, and a step of dynamically comparing said quality information with a predetermined criteria for defining a binary result corresponding to good or bad estimation conditions. The turbo-code decoding step comprises dynamically selecting (SC) a Maximum a Posteriori algorithm in the logarithmic domain, called LogMAP algorithm in presence of good conditions, or an approximation of said Maximum a Posteriori algorithm in the logarithmic domain, called MaxLogMAP algorithm, in presence of bad conditions.

Abstract translation: 表示信道状态估计的条件的质量信息，是确定的开采和用于定义一个二进制结果对应于好坏估计条件预定标准进行比较。 叫日志MAP或称为最大日志MAP MAP算法的近似最大后验（MAP）算法动态选择gemäß到的好或坏条件的存在。 因此独立claimsoft包括用于接收器。

公开(公告)号：EP1383110A1

公开(公告)日：2004-01-21

申请号：EP02015920.8

申请日：2002-07-17

Applicant: STMicroelectronics N.V.

Inventor： La désignation de l'inventeur n'a pas encore été déposée

IPC: G10L19/12

CPC classification number: G10L19/12

Abstract: On échantillonne la parole de façon à obtenir des trames vocales successives comportant chacune un nombre prédéterminé d'échantillons, et à chaque trame vocale on détermine des paramètres d'un modèle de prédiction linéaire à excitation par code, ces paramètres comportant un mot numérique d'excitation à long terme (v i ) extrait d'un répertoire codé adaptatif (DLT) et un gain à long terme associé (Ga), ainsi qu'un mot d'excitation à court terme (cj) extrait d'un répertoire codé algébrique (DCT) en utilisant un filtrage numérique de prédiction linéaire (FP), et un gain à court terme associé (Gc). On met à jour le répertoire codé adaptatif à partir du mot d'excitation à long terme extrait et du mot d'excitation à court terme extrait, et on met à jour l'état du filtre de prédiction linéaire (FP) avec le mot d'excitation à court terme filtré par un filtre (FLT1) d'ordre supérieur ou égal à 1 dont les coefficients dépendent de la valeur du gain à long terme, de façon à affaiblir la contribution de l'excitation à court terme lorsque le gain de l'excitation à long terme est supérieur à un seuil prédéterminé.

Abstract translation: 线性预测滤波器（FP）的使用已经使用具有大于或等于1（FLT1）的顺序的过滤器过滤的短期激励字的系数依赖于长期增益的值（Ga）的更新 所以做了短期激励贡献将降低，直到长期激励增益大于阈值。 语音以获得语音帧的连续，每一个包括该样品的预定数量的采样。 对于基于激励代码线性预测模型的参数是确定性的开采对于每个语音帧和合成参数包括长期激励数据字（ⅵ）从提取到自适应编码指数（DLT）和相关联的长期增益，以及一个短 从在使用线性预测滤波器代数编码指数（DCT）和相关联的短期增益（GC）提取出的术语激励数据字（CJ）。 的自适应编码索引使用所提取的长期和短期激励数据字更新。 因此独立权利要求中包括了以下内容：（1）语音编码用于执行该方法的装置（CD）; 和（2）无线通信终端设置有编码装置。

公开(公告)号：EP1376884A1

公开(公告)日：2004-01-02

申请号：EP02014220.4

申请日：2002-06-26

Applicant: STMicroelectronics N.V.

Inventor： Conti, Patrick

IPC: H04B1/44 ,  H04B1/48

CPC classification number: H04B1/006 ,  H04B1/005 ,  H04B1/406 ,  H04B1/48

Abstract: Le dispositif de commutation radiofréquence comporte au moins une première voie radiofréquence et une deuxième voie radiofréquence connectées ensemble à une borne d'entrée/sortie, et des moyens de commutation commandables aptes à sélectionner l'une des voies radiofréquences en réponse à un signal de commande de commutation. Les moyens de commutation comportent un module de commande connecté sur chaque voie radiofréquence. Chaque module de commande comporte une diode PIN DPNi dont la cathode est connectée à la borne d'entrée/sortie ANT, et un transistor de commande Qi dont la base est reliée à une entrée de commande Eci destinée à recevoir le signal de commande de commutation, et dont le collecteur est relié à l'anode de la diode PIN. Le collecteur du transistor de commande Qi est vu comme formant le noeud commun entre des anodes de jonctions PN.

Abstract translation: 移动电话射频交换系统使用连接到输入/输出端子的PIN二极管（DPNi）的集成电路在不同服务（GSM，DCS，PCS）和频带的发射（TX）和接收（RX）信道之间进行选择，以及 横向PNP控制晶体管（Qi），其基极连接到控制输入（Eci）并且集电极连接到二极管阳极。

公开(公告)号：EP1364413A1

公开(公告)日：2003-11-26

申请号：EP02719924.9

申请日：2002-02-26

Applicant: STMicroelectronics N.V.

Inventor： RIEVE, Peter ,  PRIMA, Jens ,  SEIBEL, Konstantin ,  MARCUS, Walder

IPC: H01L31/108 ,  H01L31/105 ,  H01L31/20 ,  H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/14676 ,  H01L27/14603 ,  H01L31/028 ,  H01L31/1055 ,  H01L31/108 ,  H01L31/115 ,  Y02E10/547

Abstract: The invention relates to an opto-electronic component for converting electromagnetic radiation into an intensity-dependent photocurrent, comprising a substrate (1) with a microelectronic circuit whose surface is provided with a first layer (7) which is electrically contacted thereto and made of amorphous silicon a-Si:H or alloys thereof, and at least one other optically active layer (8) is disposed upstream from said first layer in the direction of incident light thereof (7). The invention also relates to the production thereof. The aim of the invention is to improve upon an opto-electronic component of the above-mentioned variety in order to obtain high spectral sensitivity within the visible light range and, correspondingly, significantly reduce sensitivity to radiation in the infrared range without incurring any additional construction costs. The invention is characterized in that a component is produced using a material in the intrinsic absorption layer (7) which is modified by an additional hydrocarbon content corresponding to alloy conditions, whereupon photons whose energy is less than the energy gap between two bands are absorbed only in reverse contact of the component which is sealed off from the substrate, as opposed to being absorbed in the first layer.