Abstract:
The invention concerns a gas analyzer comprising: a measuring volume (2), a radiation source (1) for providing a beam to pass said measuring volume; a heat sink (16) for said radiation source; at least one thermal detector (3) having a hot junction within a support structure and receiving the radiation and a cold junction for reference within the same support structure and protected from said radiation; at least one optical bandpass filter (9) between said hot junction and said radiation source; and a thermal mass (11), which is formed of a material having high thermal conductance. The thermal mass has a cavity with a bottom step (34) and a rim (32), and a first length therebetween. The support structure has a frontal edge (35) and a base plate lip (33), and a second length therebetween. There is a radial gap between the thermal mass and the support structure. Press means urge said support structure in the cavity, whereupon a more efficient thermal contact is either between said frontal edge and said bottom step, or between said base plate lip and said rim. A first thermal barrier (17) is between the heat sink and the thermal mass, and a second thermal barrier (22) surrounds the thermal mass. A shield (19) formed of a material having high thermal conductance covers said second thermal barrier and is in thermal contact with said heat sink.
Abstract:
A method for improving the measurement of semiconductor wafers is disclosed. In the past, the repeatability of measurements was adversely affected due to the unpredictable growth of a layer of contamination over the intentionally deposited dielectric layers. Repeatability can be enhanced by removing this contamination layer prior to measurement. This contamination layer can be effectively removed in a non-destructive fashion by subjecting the wafer to a cleaning step. In one embodiment, the cleaning is performed by exposing the wafer to microwave radiation. Alternatively, the wafer can be cleaned with a radiant heat source. These two cleaning modalities can be used alone or in combination with each other or in combination with other cleaning modalities. The cleaning step may be carried out in air, an inert atmosphere or a vacuum. Once the cleaning has been performed, the wafer can be measured using any number of known optical measurement systems.
Abstract:
A method for improving the measurement of semiconductor wafers is disclosed. In the past, the repeatability of measurements was adversely affected due to the unpredictable growth of a layer of contamination over the intentionally deposited dielectric layers. Repeatability can be enhanced by removing this contamination layer prior to measurement. This contamination layer can be effectively removed in a non-destructive fashion by subjecting the wafer to a cleaning step. In one embodiment, the cleaning is performed by exposing the wafer to microwave radiation. Alternatively, the wafer can be cleaned with a radiant heat source. These two cleaning modalities can be used alone or in combination with each other or in combination with other cleaning modalities. The cleaning step may be carried out in air, an inert atmosphere or a vacuum. Once the cleaning has been performed, the wafer can be measured using any number of known optical measurement systems.
Abstract:
The invention relates to a measurement apparatus for measuring the concentration of a gaseous substance. The apparatus comprises a light source, a light sensor, and a housing comprising at least one first housing member having a low thermal conductivity. A light path is formed from said light source to said light sensor, wherein the light path passes through a measurement region within said housing. The light source is configured to emit light with a spectral distribution such that said light is absorbed by said gaseous substance. Said light sensor is configured to receive the light emitted by the light source after it has passed through the measurement region. The first housing member comprises a thermal shielding region facing said measurement region on its one side and said light sensor on its other side, and is configured to permit the passage of light.
Abstract:
The invention relates to an inspection and repair module for an internal side wall of a vertically erected structure, with the module including a carrier for supporting at least one data recording mechanism and being securable to a hoist, and for an inspection and repair module for an internal wall of a conduit with the module including propulsion means comprising a set of driven tracked wheels controllable by a controller carried by the carrier and configured to provide, within a conduit, longitudinal forward and reverse motion.
Abstract:
The present invention relates to an interferometer arrangement and a method for the operation thereof. The interferometer arrangement comprises an interferometer having an interferometer light source, the emitted radiation of which may be divided into a measurement arm and a reference arm, wherein a measured object is disposed in the measurement arm and the interferometer provides interferometer signals as a function of the position of the measured object. Detection means are further provided for detecting fluctuations in the refractive index of the air in the measurement and/or reference arm. The detection means comprise a spectrometer unit; the spectrometer unit comprises at least one spectrometer light source and at least one spectrometer detector unit. The ray bundles emitted by the spectrometer light source are overlaid with the ray bundles of the interferometer light source, wherein the spectrometer light source emits radiation with a wavelength in the range of an absorption line of at least one certain air component. The spectrometer detector unit serves to generate spectrometer signals that characterize the absorption of the air component with regard to the spectrometer light source wavelength in the measurement and/or reference arm.
Abstract:
The present invention discloses a method for measuring an amount of an objective component to bemeasured in a sample, which comprises; preventing an electric charge in an atmosphere in a photometry chamber from transferring to the surface of a solution which generates light due to an energy variation of a substance induced by the objective component in the sample, measuring value of the light, and determining an amount of the objective component in the sample on the basis of the measured value thus obtained, and an instrument used for the method. According to the present invention, in measurement of an objective component in a sample using a spectrophotometer, problems such as between-day variation of signal values or increase of background value, etc. can be solved, and a trace component can be measured in high accuracy and high sensitivity.
Abstract:
The invention concerns a gas analyzer comprising: a measuring volume (2), a radiation source (1) for providing a beam to pass said measuring volume; a heat sink (16) for said radiation source; at least one thermal detector (3) having a hot junction within a support structure and receiving the radiation and a cold junction for reference within the same support structure and protected from said radiation; at least one optical bandpass filter (9) between said hot junction and said radiation source; and a thermal mass (11), which is formed of a material having high thermal conductance. The thermal mass has a cavity with a bottom step (34) and a rim (32), and a first length therebetween. The support structure has a frontal edge (35) and a base plate lip (33), and a second length therebetween. There is a radial gap between the thermal mass and the support structure. Press means urge said support structure in the cavity, whereupon a more efficient thermal contact is either between said frontal edge and said bottom step, or between said base plate lip and said rim. A first thermal barrier (17) is between the heat sink and the thermal mass, and a second thermal barrier (22) surrounds the thermal mass. A shield (19) formed of a material having high thermal conductance covers said second thermal barrier and is in thermal contact with said heat sink.