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公开(公告)号：US06614149B2
公开(公告)日：2003-09-02
申请号：US10102467
申请日：2002-03-20
Applicant: Alexander Kastalsky , Sergey Shokhor , Frank J. DiSanto , Denis A. Krusos , Boris Gorfinkel , Nikolai Abanshin
Inventor： Alexander Kastalsky , Sergey Shokhor , Frank J. DiSanto , Denis A. Krusos , Boris Gorfinkel , Nikolai Abanshin
IPC: H01J100
CPC classification number: H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30423
Abstract: A Reflective Field Emission Display system, components and methods for fabricating the components. In the FED system, a plurality of reflective edge emission pixel elements are arranged in a matrix of N rows and M columns, the pixel elements contain an edge emitter that is operable to emit electrons and a reflector that is operable to extract and laterally reflect emitted electrons. A collector layer, laterally disposed from said reflector layer is operable to attract the reflected electrons. Deposited on the collector layer is a phosphor layer that emits a photon of a known wavelength when activated by an attracted electron. A transparent layer that is oppositely positioned with respect to the pixel elements is operable to attract reflected electrons and prevent reflected electrons from striking the phosphor layer. Color displays are further contemplated by incorporating individually controlled sub-pixel elements in each of the pixel elements. The phosphor layers emit photons having wavelengths in the red, green or blue color spectrum.
Abstract translation: 反射场发射显示系统，用于制造部件的部件和方法。 在FED系统中，多个反射边缘发射像素元件以N行和M列的矩阵排列，像素元件包含可操作以发射电子的边缘发射器和可操作以提取和横向反射发射的反射器 电子。 从所述反射器层横向设置的集电极层可操作以吸引反射的电子。 沉积在集电极层上的是当被吸引的电子激活时发射已知波长的光子的磷光体层。 相对于像素元件相对定位的透明层可操作以吸引反射的电子并防止反射的电子撞击荧光体层。 通过在每个像素元件中并入单独控制的子像素元件，进一步考虑了彩色显示器。 荧光体层发射具有红色，绿色或蓝色光谱波长的光子。
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公开(公告)号：US06538368B1
公开(公告)日：2003-03-25
申请号：US09513113
申请日：2000-02-25
Applicant: Neil Anthony Fox , Wang Nang Wang
Inventor： Neil Anthony Fox , Wang Nang Wang
IPC: H01J105
CPC classification number: H01J1/308 , H01J1/316 , H01J9/022 , H01J2201/30423 , H01J2329/00 , Y10S977/939
Abstract: An electron emitter, such as for a display, has a substrate and regions of n-type material and p-type material on the substrate arranged such that there is an interface junction between the regions exposed directly to vacuum for the liberation of electrons. The p-type region may be a thin layer on top of the n-type region or the two regions may be layers on adjacent parts of the substrate with adjacent edges forming the interface junction. Alternatively, there many be multiple interface junctions formed by p-type particles or by both p-type and n-type particles. The particles may be deposited on the substrate by an ink-jet printing technique. The p-type material is preferably diamond, which may be activated to exhibit negative electron affinity.
Abstract translation: 诸如用于显示器的电子发射器具有衬底，衬底上的n型材料和p型材料的区域被布置成使得在直接暴露于真空中的区域之间存在用于释放电子的区域之间的界面结。 p型区域可以是在n型区域的顶部上的薄层，或者两个区域可以是在衬底的相邻部分上的层，其中相邻边缘形成界面结。 或者，存在由p型颗粒或p型和n型颗粒形成的多个界面结。 可以通过喷墨打印技术将颗粒沉积在基底上。 p型材料优选为金刚石，其可被活化以显示出负电子亲和力。
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123.发明授权公开(公告)号：US06522053B1
公开(公告)日：2003-02-18
申请号：US09056937
申请日：1998-04-08
Applicant: Yuichi Iwase , Masami Okita
Inventor： Yuichi Iwase , Masami Okita
IPC: H01J130
CPC classification number: H01J9/025 , H01J3/022 , H01J2201/30423
Abstract: A field emission display having element including a first electrode, and a second electrode laminated to the first electrode through an insulating layer. The first electrode has an opening; the second electrode has a hole of a planar shape corresponding to that of the opening at a position matched with the opening; and the insulating layer has a through-hole continuous to the opening and the hole. An upper edge portion of the hole is formed into a cross-sectional shape having an edge angle in a range of 80 to 100°, and at least part of the upper edge portion of the hole is exposed in the through-hole. In this element, electrons are emitted from the second electrode through the upper edge portion of the hole exposed in the through-hole by applying a specific voltage between the first electrode and the second electrode. With this configuration, a distance between the gate electrode and a field emission portion of the cathode electrode can be accurately controlled with a simple structure. To enhance an emission efficiency of electrons, a second gate electrode may be provided on the lower side of the cathode electrode through an insulating layer.
Abstract translation: 一种场致发射显示器，其具有包括第一电极的元件和通过绝缘层层叠到第一电极的第二电极。 第一电极具有开口; 所述第二电极具有与所述开口配合的位置处的所述开口对应的平面形状的孔; 并且所述绝缘层具有与所述开口和所述孔连续的通孔。 孔的上边缘部分形成为具有在80°至100°范围内的边缘角度的横截面形状，并且孔的上边缘部分的至少一部分暴露在通孔中。 在该元件中，通过在第一电极和第二电极之间施加特定电压，从第二电极通过暴露在通孔中的孔的上边缘部分发射电子。 利用这种结构，能够以简单的结构精确地控制栅极电极和阴极电极的场发射部分之间的距离。 为了提高电子的发射效率，可以通过绝缘层在阴极的下侧设置第二栅电极。
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公开(公告)号：US6135839A
公开(公告)日：2000-10-24
申请号：US430126
申请日：1999-10-29
Applicant: Yuichi Iwase , Masami Okita
Inventor： Yuichi Iwase , Masami Okita
CPC classification number: H01J9/025 , H01J3/022 , H01J2201/30423
Abstract: A field emission display having element including a first electrode, and a second electrode laminated to the first electrode through an insulating layer. The first electrode has an opening; the second electrode has a hole of a planar shape corresponding to that of the opening at a position matched with the opening; and the insulating layer has a through-hole continuous to the opening and the hole. An upper edge portion of the hole is formed into a cross-sectional shape having an edge angle in a range of 80 to 100.degree., and at least part of the upper edge portion of the hole is exposed in the through-hole. In this element, electrons are emitted from the second electrode through the upper edge portion of the hole exposed in the through-hole by applying a specific voltage between the first electrode and the second electrode. With this configuration, a distance between the gate electrode and a field emission portion of the cathode electrode can be accurately controlled with a simple structure. To enhance an emission efficiency of electrons, a second gate electrode may be provided on the lower side of the cathode electrode through an insulating layer.
Abstract translation: 一种场致发射显示器，其具有包括第一电极的元件和通过绝缘层层叠到第一电极的第二电极。 第一电极具有开口; 所述第二电极具有与所述开口配合的位置处的所述开口对应的平面形状的孔; 并且所述绝缘层具有与所述开口和所述孔连续的通孔。 孔的上边缘部分形成为具有80°至100°的边缘角度的横截面形状，并且孔的上边缘部分的至少一部分暴露在通孔中。 在该元件中，通过在第一电极和第二电极之间施加特定电压，从第二电极通过暴露在通孔中的孔的上边缘部分发射电子。 利用这种结构，能够以简单的结构精确地控制栅极电极和阴极电极的场发射部分之间的距离。 为了提高电子的发射效率，可以通过绝缘层在阴极的下侧设置第二栅电极。
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公开(公告)号：US6084245A
公开(公告)日：2000-07-04
申请号：US45853
申请日：1998-03-23
Applicant: David S. Y. Hsu , Henry F. Gray
Inventor： David S. Y. Hsu , Henry F. Gray
CPC classification number: H01J3/022 , H01J2201/30423 , H01J2201/30446
Abstract: A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.
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Patent Agency Ranking
公开(公告)号：US6005335A
公开(公告)日：1999-12-21
申请号：US990624
申请日：1997-12-15
Applicant: Michael D Potter
Inventor： Michael D Potter
CPC classification number: H01J29/94 , H01J2201/30423 , H01J2329/00
Abstract: A self-gettering electron field emitter has a first portion formed of a low-work-function material for emitting electrons, and it has an integral second portion that acts both as a low-resistance electrical conductor and as a gettering surface. The self-gettering emitter is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance gettering material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-gettering emitter is particularly suitable for use in lateral field emission devices. The preferred emitter structure has a tapered edge, with a salient portion of the low-work-function material extending a small distance beyond an edge of the gettering and low resistance material. A fabrication process specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices is also disclosed.
Abstract translation: 自吸电子场发射器具有由用于发射电子的低功函数材料形成的第一部分，并且其具有作为低电阻电导体和吸气表面的整体第二部分。 自吸收发射体通过将低功函数材料的薄膜平行于衬底设置并且将低电阻吸气材料的薄膜平行于衬底设置并与薄膜接触而形成 低功能材料。 自吸式发射器特别适用于横向场发射装置。 优选的发射极结构具有锥形边缘，低功函数材料的显着部分在吸气和低电阻材料的边缘之外延伸一小段距离。 还公开了专门用于在制造微电子场发射器件的同时形成自吸电子场发射体的制造工艺。
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公开(公告)号：US5818166A
公开(公告)日：1998-10-06
申请号：US678433
申请日：1996-07-03
CPC classification number: H01J1/3042 , H01J2201/30423
Abstract: Thin-film edge emission devices and methods for forming are provided. The emitters are formed to have extended edges. They are formed by oblique deposition on a surface of material which extends from a substrate. The material is substantially removed to leave the thin-film emitter. A gate may then be formed around the emitter. Arrays of such thin-film emitters may be used in a variety of electronic devices.
Abstract translation: 提供薄膜边缘发射装置和形成方法。 发射器形成为具有延伸的边缘。 它们通过在从衬底延伸的材料的表面上的倾斜沉积形成。 基本上去除了材料以离开薄膜发射器。 然后可以围绕发射器形成栅极。 这种薄膜发射体的阵列可以用于各种电子装置。
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公开(公告)号：US5769679A
公开(公告)日：1998-06-23
申请号：US710528
申请日：1996-09-18
Applicant: Jong-Moon Park , Yeong-Cheol Hyeon , Kee-Soo Nam
Inventor： Jong-Moon Park , Yeong-Cheol Hyeon , Kee-Soo Nam
CPC classification number: H01J9/025 , H01J2201/30423
Abstract: In a method, a film for a gate electrode, exposed through the sidewall of a trench, is thermally treated to grow a thermal oxide film which is, then, removed at the lateral side of the gate electrode, to spatially separate the gate electrode from the gate insulating film in space. This method precisely controls the thermal oxide film formed at the lateral side of the gate electrode, so that the distance between the gate electrode and the electron emission cathode can be accurately adjusted. The electron emission cathodes are homogeneous in shape. Also, the reliability of the display can be improved since a silicide metal is formed on the electron emission cathodes.
Abstract translation: 在一种方法中，通过沟槽的侧壁暴露的用于栅电极的膜被热处理以生长热氧化膜，然后在栅电极的横向侧被去除，以将栅电极与空穴分离 栅极绝缘膜在空间。 该方法精确地控制在栅电极的侧面形成的热氧化膜，从而可以精确地调节栅电极和电子发射阴极之间的距离。 电子发射阴极的形状是均匀的。 此外，由于在电子发射阴极上形成硅化物金属，所以可以提高显示器的可靠性。
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公开(公告)号：US5742121A
公开(公告)日：1998-04-21
申请号：US658296
申请日：1996-06-05
Applicant: David S. Y. Hsu , Henry F. Gray
Inventor： David S. Y. Hsu , Henry F. Gray
CPC classification number: H01J9/025 , H01J1/3042 , H01J2201/30423 , H01J2201/319
Abstract: A thin-film edge field emitter device includes a substrate having a first rtion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.
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公开(公告)号：US5618216A
公开(公告)日：1997-04-08
申请号：US459033
申请日：1995-06-02
Applicant: Michael D. Potter
Inventor： Michael D. Potter
CPC classification number: H01J9/025 , H01J3/022 , H01J2201/30423 , H01J2209/385
Abstract: A field emission device (10) is made with a lateral emitter (100) substantially parallel to a substrate (20) and with a simplified anode stucture (70). The lateral-emitter field-emission device has a thin-film emitter cathode (100) which has a thickness not exceeding several hundred angstroms and has an emitting blade edge or tip (110) having a small radius of curvature. The anode's top surface is precisely spaced apart from and below the plane of the lateral emitter and receives electrons emitted by field emission from the blade edge or tip of the lateral-emitter cathode, when a suitable bias voltage is applied. A fabrication process is disclosed using process steps (S1-S18) similar to those of semiconductor integrated circuit fabrication to produce the novel devices and their arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates (20) and allow fabrication of devices having various functions and complexity. The anode (70) is simply fabricated, without the use of prior-art processes which formed a spacer made by a conformal coating. In a preferred fabrication process for the simplified anode device, the following steps are performed: an anode film (70) is deposited; an insulator film (90) is deposited over the anode film; an ultra-thin conductive emitter film (100) is deposited over the insulator and patterned; a trench opening (160) is etched through the emitter and insulator, stopping at the anode film, thus forming and automatically aligning an emitting edge of the emitter; and means are provided for applying an electrical bias to the emitter and anode, sufficient to cause field emission of electrons from the emitting edge of the emitter to the anode. The anode film may comprise a phosphor (75) for a device specially adapted for use in a field emission display. The fabrication process may also include steps to deposit additional insulator films (130) and to deposit additional conductive films for control electrodes (140), which are automatically aligned with the emitter blade edge or tip (110).
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