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    SYSTEM FOR FREQUENCY CONVERSION, SEMICONDUCTING DEVICE AND METHOD FOR OPERATING AND MANUFACTURING THE SAME
    131.
    发明申请
    SYSTEM FOR FREQUENCY CONVERSION, SEMICONDUCTING DEVICE AND METHOD FOR OPERATING AND MANUFACTURING THE SAME 有权
    用于频率转换的系统，半导体器件及其操作和制造方法

    公开(公告)号：US20130270518A1

    公开(公告)日：2013-10-17

    申请号：US13859832

    申请日：2013-04-10

    Applicant: FORSCHUNGSVERBUND BERLIN E.V.

    Inventor： Markus WEYERS ,  Götz ERBERT

    IPC: H01L33/06

    CPC classification number: H01L33/06 ,  H01S3/094092 ,  H01S5/0287 ,  H01S5/041 ,  H01S5/1203

    Abstract: The document describes an edge-emitting semiconductor component comprising a semiconductor substrate layer and semiconductor layers that are epitaxially grown onto the semiconductor substrate layer. The semiconductor include an active zone and a waveguide layer. The semiconductor component according to the invention is characterized in that the active zone is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and to generate an optical radiation of a second wavelength that is shorter than the first wavelength.In addition, the document describes a system for frequency conversion with the semiconductor component and a pump laser diode, a method for operating a semiconductor component, and a method for manufacturing a semiconductor component.

    Abstract translation: 该文献描述了包括半导体衬底层和外延生长到半导体衬底层上的半导体层的边缘发射半导体部件。 半导体包括有源区和波导层。 根据本发明的半导体部件的特征在于，有源区被设计成通过多光子吸收来吸收第一波长的泵浦光辐射并且产生比第一波长短的第二波长的光辐射。 此外，该文献描述了一种用于使用半导体部件和泵激光二极管进行频率转换的系统，用于操作半导体部件的方法以及半导体部件的制造方法。

    SEMICONDUCTOR LAYER STRUCTURE
    132.
    发明申请
    SEMICONDUCTOR LAYER STRUCTURE 有权
    半导体层结构

    公开(公告)号：US20130241006A1

    公开(公告)日：2013-09-19

    申请号：US13888400

    申请日：2013-05-07

    Applicant: FORSCHUNGSVERBUND BERLIN E.V.

    Inventor： Oliver HILT ,  Rimma ZHYTNYTSKA ,  Hans-Joachim WÜRFL

    IPC: H01L29/78 ,  H01L29/06

    CPC classification number: H01L29/78 ,  H01L29/06 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/861

    Abstract: This invention relates to a semiconductor layer structure. The semiconductor layer structure described includes a substrate and a buffer layer deposited onto the substrate. The semiconductor layer structure is characterized in that a drain voltage threshold lower than the breakdown voltage threshold is determined by isolating ions that are selectively implanted in just one region of the substrate into the substrate, wherein charge can dissipate from the one contact through the buffer layer towards a substrate region without isolating ions, if the one potential deviates from the other at least by the drain voltage threshold, and wherein the substrate region without isolating ions is located underneath the one contact. The semiconductor layer structure described allows dissipation of currents induced by induction in blocking active structures without damaging the active structures.

    Abstract translation: 本发明涉及半导体层结构。 所述的半导体层结构包括衬底和沉积在衬底上的缓冲层。 半导体层结构的特征在于，通过将选择性地植入衬底的一个区域中的离子分离到衬底中来确定低于击穿电压阈值的漏极电压阈值，其中电荷可以通过缓冲层从一个触点消散 如果一个电位至少与漏极电压阈值相离，则衬底区域不隔离离子，并且其中不隔离离子的衬底区域位于一个触点下方。 所描述的半导体层结构允许在阻挡有源结构的情况下感应诱导的电流的耗散而不损坏有源结构。

    CRYSTAL GROWTH DEVICE AND METHOD FOR GROWING A SEMICONDUCTOR
    135.
    发明公开
    CRYSTAL GROWTH DEVICE AND METHOD FOR GROWING A SEMICONDUCTOR 审中-公开

    公开(公告)号：US20240044044A1

    公开(公告)日：2024-02-08

    申请号：US18363366

    申请日：2023-08-01

    Applicant: Forschungsverbund Berlin e.V.

    Inventor： Carsten HARTMANN ,  Thomas STRAUBINGER

    IPC: C30B29/36 ,  C30B29/40 ,  C30B23/00

    CPC classification number: C30B29/36 ,  C30B29/403 ,  C30B23/002

    Abstract: The invention relates to a crystal growth device for growing a semiconductor from a gas phase, the crystal growth device comprising, a crucible, a heater, and a holding plate. The crucible on a crucible vessel and a crucible lid supported on the crucible vessel, wherein the crucible vessel is configured to receive and hold a source material for the semiconductor during growth of the semiconductor. The heater is configured and arranged to heat the source material in the crucible vessel so that the source material at least partially changes to its gaseous phase and flows toward the crucible lid. The holding plate is configured to hold a seed crystal on a side of the holding plate facing the crucible lid, and to allow deposition of the source material that has changed into its gas phase on the seed crystal for growing the semiconductor. The holding plate is further configured to be spaced from a crucible bottom of the crucible vessel for growing the semiconductor, such that it is located between the source material and the crucible lid.

    Method and device for raman spectroscopy
    138.
    发明授权
    Method and device for raman spectroscopy 有权

    公开(公告)号：US10794766B2

    公开(公告)日：2020-10-06

    申请号：US16313668

    申请日：2017-06-23

    Applicant: FORSCHUNGSVERBUND BERLIN E.V.

    Inventor： Bernd Sumpf ,  Martin Maiwald

    IPC: G01J3/44 ,  G01J3/10 ,  G01N21/65

    Abstract: Raman spectroscopy methods and devices are disclosed.The method includes irradiation of excitation radiation onto a sample to be examined. The sample is irradiated with a first excitation radiation of a first excitation wavelength and a different second excitation radiation of a second excitation wavelength. The first excitation radiation scattered by the sample is wavelength-selective filtered by means of a passive filter element. A transmitted filter wavelength of the filter element differs from at least the first excitation wavelength and the second excitation wavelength. A first intensity is determined through a single-channel detector assigned to the filter wavelength from the first excitation radiation scattered and filtered by the sample. Additionally, the filter element wavelength-selective filters the second excitation radiation scattered by the sample. A second intensity is determined through the single-channel detector assigned to the filter wavelength from the second excitation radiation scattered and filtered by the sample.

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