公开(公告)号：US20180145481A1

公开(公告)日：2018-05-24

申请号：US15736631

申请日：2016-03-09

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Jörg FRICKE ,  Götz ERBERT ,  Paul CRUMP ,  Jonathan DECKER

IPC: H01S5/12 ,  H01S5/026 ,  H01S5/20

CPC classification number: H01S5/1225 ,  H01S5/026 ,  H01S5/1221 ,  H01S5/1231 ,  H01S5/2086

Abstract: Laser diode comprises an active layer; a waveguiding region at least partially surrounding the active layer; a rear facet; a front facet designed for decoupling laser radiation, wherein the active layer extends at least partially along a first axis (X) between the rear facet and the front facet; and a grid operatively connected to the waveguiding region, wherein the grid comprises a plurality of webs and trenches designed such that an average increase of a coupling parameter P for the plurality of trenches along the grid is non-zero, wherein the coupling parameter P of a trench is defined by the formula, wherein dres is a distance of the trench to the active layer, w is a width of the trench and Δn is the refractive index difference between a refractive index of the trench and a refractive index of a material surrounding the trench.

公开(公告)号：US20130270518A1

公开(公告)日：2013-10-17

申请号：US13859832

申请日：2013-04-10

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Markus WEYERS ,  Götz ERBERT

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01S3/094092 ,  H01S5/0287 ,  H01S5/041 ,  H01S5/1203

Abstract: The document describes an edge-emitting semiconductor component comprising a semiconductor substrate layer and semiconductor layers that are epitaxially grown onto the semiconductor substrate layer. The semiconductor include an active zone and a waveguide layer. The semiconductor component according to the invention is characterized in that the active zone is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and to generate an optical radiation of a second wavelength that is shorter than the first wavelength.In addition, the document describes a system for frequency conversion with the semiconductor component and a pump laser diode, a method for operating a semiconductor component, and a method for manufacturing a semiconductor component.

Abstract translation: 该文献描述了包括半导体衬底层和外延生长到半导体衬底层上的半导体层的边缘发射半导体部件。 半导体包括有源区和波导层。 根据本发明的半导体部件的特征在于，有源区被设计成通过多光子吸收来吸收第一波长的泵浦光辐射并且产生比第一波长短的第二波长的光辐射。 此外，该文献描述了一种用于使用半导体部件和泵激光二极管进行频率转换的系统，用于操作半导体部件的方法以及半导体部件的制造方法。

公开(公告)号：US20200052465A1

公开(公告)日：2020-02-13

申请号：US16478558

申请日：2018-01-25

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Thorben KAUL ,  Götz ERBERT ,  Paul CRUMP

IPC: H01S5/20 ,  H01S5/343

Abstract: A diode laser comprises an n-type first cladding layer, an n-type first waveguide layer arranged on the first cladding layer, an active layer suitable for radiation generation and arranged on the first waveguide layer, a p-type second waveguide layer arranged on the active layer, a p-type second cladding layer which is arranged on the second waveguide layer, an n-type first intermediate layer being formed as a transition region between the first waveguide layer and the active layer, and a p-type second intermediate layer being formed as a transition region between the second waveguide layer and the active layer. The diode laser according to the invention is characterized in that the asymmetry ratio of the thickness of the first intermediate layer to the sum of the thickness of the first intermediate layer and the thickness of the second intermediate layer is less than or greater than 0.5.

公开(公告)号：US20190273359A1

公开(公告)日：2019-09-05

申请号：US16327419

申请日：2017-08-21

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Götz ERBERT ,  Jörg FRICKE ,  Andre MÜLLER ,  Hans WENZEL ,  Bernd SUMPF ,  Katrin PASCHKE

IPC: H01S5/10 ,  H01S5/125 ,  G02B6/122 ,  G02B6/124

Abstract: The inventive waveguide structure comprises a first waveguide region having a constant first width adapted to guide electromagnetic waves mode sustainably along its longitudinal axis; a second waveguide region adapted to guide electromagnetic waves mode sustainably along its longitudinal axis, wherein the longitudinal axis of the first waveguide region and the longitudinal axis of the second waveguide region form a common longitudinal axis of the waveguide structure, wherein a first end face of the first waveguide region and a first end face of the second waveguide region are aligned with each other, the width of the first end face of the second waveguide region corresponding to the first width, and the width of the second waveguide region along its longitudinal axis widens from the first end face to a second end face to a second width greater than the first width.