公开(公告)号：US20130270518A1

公开(公告)日：2013-10-17

申请号：US13859832

申请日：2013-04-10

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Markus WEYERS ,  Götz ERBERT

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01S3/094092 ,  H01S5/0287 ,  H01S5/041 ,  H01S5/1203

Abstract: The document describes an edge-emitting semiconductor component comprising a semiconductor substrate layer and semiconductor layers that are epitaxially grown onto the semiconductor substrate layer. The semiconductor include an active zone and a waveguide layer. The semiconductor component according to the invention is characterized in that the active zone is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and to generate an optical radiation of a second wavelength that is shorter than the first wavelength.In addition, the document describes a system for frequency conversion with the semiconductor component and a pump laser diode, a method for operating a semiconductor component, and a method for manufacturing a semiconductor component.

Abstract translation: 该文献描述了包括半导体衬底层和外延生长到半导体衬底层上的半导体层的边缘发射半导体部件。 半导体包括有源区和波导层。 根据本发明的半导体部件的特征在于，有源区被设计成通过多光子吸收来吸收第一波长的泵浦光辐射并且产生比第一波长短的第二波长的光辐射。 此外，该文献描述了一种用于使用半导体部件和泵激光二极管进行频率转换的系统，用于操作半导体部件的方法以及半导体部件的制造方法。