中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

587 records (took 0.023 seconds)

    135.
    发明专利
    未知

    公开(公告)号：DE10035867A1

    公开(公告)日：2002-01-31

    申请号：DE10035867

    申请日：2000-07-14

    Applicant: FORSCHUNGSVERBUND BERLIN EV

    Inventor： VINKEMEIER UWE

    IPC: C07K14/47 ,  C07K7/08

    Abstract: The invention relates to novel nucleus export signal peptides, to fusion proteins containing the same, and to the use thereof. The inventive signal peptides modify the transport of biological structures between the nucleus and cytoplasm.

    Semiconductor laser component has inner boundary layers made of two different mixed crystal systems whose band distances are smaller than those of the outer boundary layers
    137.
    发明专利
    Semiconductor laser component has inner boundary layers made of two different mixed crystal systems whose band distances are smaller than those of the outer boundary layers 未知

    公开(公告)号：DE19927008A1

    公开(公告)日：2000-12-21

    申请号：DE19927008

    申请日：1999-06-07

    Applicant: FORSCHUNGSVERBUND BERLIN EV

    Inventor： BUGGE FRANK ,  ERBERT GOETZ ,  WENZEL HANS

    IPC: H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

    Abstract: Semiconductor laser component has inner boundary layers (5, 7) made of two different mixed crystal systems whose band distances (Ei1, Ei2) are smaller than those of the outer boundary layers (4, 8). Semiconductor laser component has inner boundary layers (5, 7) made of two different mixed crystal systems whose band distances (Ei1, Ei2) are smaller than those of the outer boundary layers (4, 8). The energetic layers of the conducting and valence band edges of the systems are arranged in such a way that the valence band edges of the n-conducting inner boundary layer (5) lies energetically lower than the valence band edge of the p-conducting inner boundary layer (7). The conducting band edges of the p-conducting inner boundary layer lies energetically higher than the conducting band edge than the conducting band edges of the n-conducting inner boundary layer. The conducting band edge of the n-conducting inner boundary layer lies energetically lower than the conducting band edge of the n-conducting outer boundary layer (4). The valence band edge of the p-conducting inner boundary layer lies energetically higher than the valence band edge of the p-conducting outer boundary layer (8).

    138.
    发明专利
    未知

    公开(公告)号：DE19954109A1

    公开(公告)日：2000-10-05

    申请号：DE19954109

    申请日：1999-11-02

    Applicant: FORSCHUNGSVERBUND BERLIN EV

    Inventor： GLAS PETER ,  LEITNER MARTIN

    IPC: G02F1/35 ,  H01S3/098 ,  H01S3/108 ,  H01S3/113

    Abstract: Conventional devices for producing very short laser pulses in which an optical medium as the laser source is arranged between two reflectors are provided with a reflector that is provided with semiconductor layers that absorb the incident laser beam depending on the intensity thereof. The aim of the invention is to provide such a device that is easy to produce and does not require a complicated adjustment. To this end, the optical non-linear reflector (2) consists of a refraction-controlled semiconductor layer (7) that has an intensity-depending refractive index and a highly refractive layer (8). A diaphragm (4) and a lens system that consists of at least two lenses (5, 6) is arranged in the beam path between the laser source (3) and the non-linear reflector (2). The distance (a) between the lens (6) and the refraction-controlled layer (7) of the non-linear refractor (2) is adjusted in such a manner that the resulting diameter (12) of the intensity distribution is larger for small intensities than the diameter of the diaphragm (4). The inventive device is easy to produce, can be integrated and easily adapted to different lasers. The inventive device can be used to compensate refractive effects since the refractive index increments for the refraction-controlled semiconductor layer (7) and the optical media (3, 5, 6) have opposite algebraic signs.

Patent Agency Ranking