2.
    发明专利
    未知

    公开(公告)号:DE102005020072A1

    公开(公告)日:2006-11-02

    申请号:DE102005020072

    申请日:2005-04-22

    Abstract: The invention relates to a method for finely polishing/structuring thermosensitive dielectric materials, in particular materials exhibiting a low thermal expansion coefficient, by a laser beam consisting in directing an intensive ultrashort laser beam to a processable material surface, in adjusting the action time within a range from 10-13 s to 10-11 s and a laser pulse energy in such a way that it is less than an ablation threshold but sufficient for provoking a Coulomb explosion. The inventive method makes it possible to carry out a material removal within a nanometer range by means of laser ultrashort pulses ranging between picoseconds and subpicoseconds, wherein the material surface is finely polished during a pre-ablation process step (removal less than the ablation range) and the processable surface is low-heated (approximately up to 10 ° C., only) due to the extremely shot laser beam action time.

    4.
    发明专利
    未知

    公开(公告)号:DE102005020072B4

    公开(公告)日:2007-12-06

    申请号:DE102005020072

    申请日:2005-04-22

    Abstract: The invention relates to a method for finely polishing/structuring thermosensitive dielectric materials, in particular materials exhibiting a low thermal expansion coefficient, by a laser beam consisting in directing an intensive ultrashort laser beam to a processable material surface, in adjusting the action time within a range from 10-13 s to 10-11 s and a laser pulse energy in such a way that it is less than an ablation threshold but sufficient for provoking a Coulomb explosion. The inventive method makes it possible to carry out a material removal within a nanometer range by means of laser ultrashort pulses ranging between picoseconds and subpicoseconds, wherein the material surface is finely polished during a pre-ablation process step (removal less than the ablation range) and the processable surface is low-heated (approximately up to 10 ° C., only) due to the extremely shot laser beam action time.

    6.
    发明专利
    未知

    公开(公告)号:AT527080T

    公开(公告)日:2011-10-15

    申请号:AT06725207

    申请日:2006-03-21

    Abstract: The invention relates to a method for finely polishing/structuring thermosensitive dielectric materials, in particular materials exhibiting a low thermal expansion coefficient, by a laser beam consisting in directing an intensive ultrashort laser beam to a processable material surface, in adjusting the action time within a range from 10-13 s to 10-11 s and a laser pulse energy in such a way that it is less than an ablation threshold but sufficient for provoking a Coulomb explosion. The inventive method makes it possible to carry out a material removal within a nanometer range by means of laser ultrashort pulses ranging between picoseconds and subpicoseconds, wherein the material surface is finely polished during a pre-ablation process step (removal less than the ablation range) and the processable surface is low-heated (approximately up to 10 ° C., only) due to the extremely shot laser beam action time.

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