公开(公告)号：JPH07273403A

公开(公告)日：1995-10-20

申请号：JP9509794

申请日：1994-05-09

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  AKIMOTO KATSUHIRO ,  ISHIBASHI AKIRA ,  SHIRAISHI SEIJI ,  ITO SATORU ,  NAKANO KAZUSHI ,  IKEDA MASAO ,  HINO TOMOKIMI ,  UKITA SHOICHI

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/327 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE:To improve luminous intensity when a semiconductor light emitting element is constituted of II-VI compound semiconductor, and realize continuous oscillation at a low threshold value. CONSTITUTION:The title device consists of a semiconductor substrate 1, a first clad layer 2 of first conductivity type on the substrate 1, an active layer 4 on the first clad layer 2, and a second clad layer 6 of second conductivity type on the active layer 4. The first and the second clad layers consist of II-VI compound semiconductor composed of at least one or more kinds of elements out of Zn, Hg, Cd and Mg, and at least one or more kinds of group 7 elements out of S, Se and Te. The lattice mismatch DELTAa/a (%) between at least one out of the first clad layer and the second clad layer and the semiconductor substrate is in the range of-0.9

公开(公告)号：JPH07170017A

公开(公告)日：1995-07-04

申请号：JP29791894

申请日：1994-11-07

Applicant: SONY CORP

Inventor： ISHIKAWA HIDETO ,  ISHIBASHI AKIRA ,  MORI YOSHIFUMI ,  IKEDA MASAO

IPC: H01S5/00 ,  H01S3/18

Abstract: PURPOSE:To improve laser characteristics and life, and enable continuous oscillation at a room temperature, by reducing the scattering of LA phonos in a clad layer of quaternary semiconductor laser, and improving thermal conductivity. CONSTITUTION:In a quaternary semiconductor laser, at least one out of clad layer 12 and 14 which are in contact with an active layer 13 is formed of a quaternary clad layer of superlattice structure by periodic lamination of thin film semiconductor of tertiary mixed crystal. The average composition of the clad layer of the superlattice structure has necessary bandgap difference and refractive index difference to the active layer 13. The composition is selected to be approximate to the composition of quaternary mixed crystal capable of exhibiting the confinement effect of carrier and light.

公开(公告)号：JPH03276786A

公开(公告)日：1991-12-06

申请号：JP7797690

申请日：1990-03-27

Applicant: SONY CORP

Inventor： YAMAMOTO SUNAO ,  IKEDA MASAO ,  MIKATA YASUSONO

IPC: H01S5/00 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

Abstract: PURPOSE:To increase reproducibility and reliability by a method wherein a first main clad layer coming into contact with a double heterojunction type active layer, a deterioration-preventing layer and a first thin-film clad layer are laminated and a current constriction layer is formed at a removed part of a second clad layer. CONSTITUTION:An (AlzGa1-z)As-based deterioration-preventing layer 11 is arranged in a first clad layer 51; it is possible to prevent P from being evaporated especially from a first main clad layer 51a on the side of an active layer 4; it is possible to avoid that the characteristic of the clad layer is lowered and that its crystallinity is deteriorated. When the surface of the first clad layer 51 containing P and acting as an etching stopper is faced with a removed part 9 used to form a current constriction layer 10, the deterioration-preventing layer 11 exists and the thickness of a thin-film layer 51b is sufficiently thin. As a result, P in the thin-film layer 51b is mostly evaporated or is transformed into AsP by a heating temperature at an epitaxial growth operation used to form the current constriction layer 10; it is possible to avoid a trouble that a good epitaxial growth operation is obstructed when P in the removed part 9 exists on the surface.

公开(公告)号：JPH01175278A

公开(公告)日：1989-07-11

申请号：JP33238587

申请日：1987-12-29

Applicant: SONY CORP

Inventor： NAKANO KAZUSHI ,  IKEDA MASAO ,  TODA ATSUSHI

IPC: H01S5/00

Abstract: PURPOSE:To improve the crystalline property of a p-type clad layer and extend its lifetime characteristics, by causing the carrier concentration of the p-type clad layer adjacent to an active layer to come to a low level in an AlGaInP semiconductor laser. CONSTITUTION:In the case of an AlGaInP semiconductor laser 12, the carrier concentration of a p-type clad layer in a double hetero structure is set below 6X10 cm . In other words, an MOCVD process allows an n-type (Al0.5Ga0.5)0.5 In0.5P clad layer 3, an undopped Ga0.5In0.5P active layer 4, a p-type (Al0.5Ga0.5)0.5 In0.5P clad layer 11 where positive hole concentration is 2X10 cm , and a p-type GaAs cap layer 6 to grow one after another on an n-type GaAs substrate 2. Required ions are implanted in such a way that the ions reaches the p-type AlGaInP clad layer 11 by leaving the center part of the cap layer 6 in a stripe form and the semiconductor laser 12 is made up by forming an ion-implanted high resistance layer 7.

公开(公告)号：JPH01175227A

公开(公告)日：1989-07-11

申请号：JP33605987

申请日：1987-12-28

Applicant: SONY CORP

Inventor： IKEDA MASAO

IPC: H01L21/205 ,  C23C16/44 ,  C23C16/448 ,  C30B25/14

Abstract: PURPOSE:To prevent a line pipe from being clogged by a method wherein different kinds of mutually reactive raw material gases are supplied to a reaction tube from different lines and are joined inside an oil trap from the different lines when the lines are changed over to the side of a discharge line. CONSTITUTION:During a crystal growth operation an air operation valve 12A is opened and an air operation valve 12B is closed; a group III raw material gas TEIn from a bubbler container 3 and a group V raw material gas PH3 or AsH3 from a bomb 4 are supplied to a reaction tube 1 through respective pipes 7 and 8. In addition, the valves 12A and 12B are changed over; the individual raw material gases flow through individual pipes 9 and 10 of a discharge line and are joined inside an oil 5a of an oil trap 5; after that, they flow through a discharge system 11. Accordingly, a nonvolatile product due to a reaction of both raw material gases is collected inside the oil 5a and is not deposited inside the pipes.

公开(公告)号：JPS59182296A

公开(公告)日：1984-10-17

申请号：JP5632983

申请日：1983-03-31

Applicant: Sony Corp

Inventor： IKEDA MASAO ,  MORI YOSHIFUMI

IPC: C30B25/14 ,  C30B25/02 ,  C30B29/40 ,  H01L21/205

CPC classification number: C30B25/02 ,  C30B29/40

Abstract: PURPOSE:The starting gas of a compound of group V element containing PH3 is subjected to partial pyrolysis of PH3 to capture the contaminants in the gas by the pyrolytic products and they are separated by cooling, then the resultant gas is fed to the crystal growth reactor to effect the vapor phase growth of high-quality P-containing crystals of a compound of group III-V elements. CONSTITUTION:The starting of group V element compound containing PH3 which is controlled in its flow rate with the flowmeter 1 is combined with H2 gas which is purified with the purifier 2 and controlled in its flow rate by means of the flow meter 3 and they are led to the prepyrolyzer 4. The mixture is heated with an appropriate heater 5 in the part A to effect partial pyrolysis of PH3 and resultant products P, PH and their ions are allowed to react with the contaminants in the gas such as water or oxygen for capturing. Then, the phosphorides of the contaminants or elementary phosphorus are condensed on the part B channel walls by cooling and the purified PH3-containing gas is combined with a compound of group III element which is carried from the system for feeding the organometallic compound with the H2 carrier to feed them to the vapor phase crystal growth reactor 6.

Abstract translation: 目的：将含有PH3的V族元素的化合物的起始气体进行PH3的部分热解，通过热解产物捕获气体中的污染物，并通过冷却分离，然后将所得气体进料到晶体生长反应器 以实现III-V族元素化合物的高质量含P晶体的气相生长。 构成：用流量计1控制其流量的含有PH3的V族元素化合物的起始与用净化器2净化并用流量计3进行流量控制的H 2气合并， 导致制备商4.将混合物用部分A中的合适的加热器5加热以实现PH3的部分热解，并使所得产物P，PH和它们的离子与气体中的污染物例如水或氧反应，用于 捕获。 然后，通过冷却将污染物或元素磷的磷化合物在部分B通道壁上冷凝，并将纯化的含PH3的气体与从用于向有机金属化合物供给的系统中携带的III族元素的化合物 载体将其送入气相晶体生长反应器6。