公开(公告)号：US20160093771A1

公开(公告)日：2016-03-31

申请号：US14660125

申请日：2015-03-17

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/32 ,  G06F17/50 ,  H01L33/22 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L33/22 ,  G06F17/5068 ,  G06F2217/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/16225

Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.

Abstract translation: 提供了用于改善半导体层的生长的图案化表面，例如III族氮化物基半导体层。 图案化表面可以包括一组基本平坦的顶表面和多个开口。 每个基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且开口可以具有在约0.1微米和5微米之间的特征尺寸。 基本平坦的顶表面中的一个或多个可以基于目标辐射进行图案化。

公开(公告)号：US20160074548A1

公开(公告)日：2016-03-17

申请号：US14853075

申请日：2015-09-14

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: A61L2/10 ,  F21V7/00

CPC classification number: A61L2/10 ,  A61L2/00 ,  A61L2/088 ,  A61L9/00 ,  A61L2209/11 ,  F21V7/0091 ,  G02B6/00 ,  G02B6/0003 ,  G02B6/0051 ,  G02B6/006

Abstract: A diffusive illuminator is provided. The diffusive illuminator includes a set of light sources and a light guiding structure including a plurality of layers. At least some of the layers can be formed of a fluoropolymer and at least one layer can be formed of a transparent fluid. The light guiding structure also includes an emission surface through which diffused light exits. The light guiding structure can further include diffusive elements associated with at least one of the plurality of layers. Each diffusive element can diffuse the light to within forty percent of Lambertian distribution. The diffusive elements can be arranged based on a desired uniformity of the diffused light at a target distance corresponding to a surface to be illuminated. The diffusive illuminator can emit ultraviolet light, and can be implemented as part of a disinfection system.

Abstract translation: 提供漫射照明器。 扩散照明器包括一组光源和包括多个层的导光结构。 至少一些层可以由氟聚合物形成，并且至少一层可以由透明流体形成。 导光结构还包括散射光通过其射出的发射表面。 导光结构还可以包括与多个层中的至少一个相关联的扩散元件。 每个漫射元件可将光扩散到朗伯分布的百分之四十以内。 扩散元件可以基于对应于待照射表面的目标距离处的漫射光的期望均匀性来布置。 扩散照明器可以发射紫外线，并且可以作为消毒系统的一部分实现。

公开(公告)号：US09263533B2

公开(公告)日：2016-02-16

申请号：US13622379

申请日：2012-09-19

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/66 ,  H01L29/76 ,  H01L29/788 ,  H01L21/70 ,  H01L29/02 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/4175 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7787

Abstract: A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.

Abstract translation: 提供具有多个电压阈值的通道的装置。 通道可以包括位于与作为常开通道的源电极相邻的第一部分和位于第一部分和作为常开通道的漏电极之间的第二部分。 该装置可以包括连接到源电极的电荷控制电极，其从源电极延伸到通道的第二部分的至少一部分上。 在器件工作期间，充电控制电极和通道之间的电位差可以控制通道的常开部分的开/关状态。

公开(公告)号：US20150338336A1

公开(公告)日：2015-11-26

申请号：US14814537

申请日：2015-07-31

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: G01N21/05 ,  A61L2/10 ,  G02B5/06

CPC classification number: G01N21/05 ,  A61L2/10 ,  A61L9/20 ,  A61L2202/122 ,  C02F1/325 ,  G01N21/0303 ,  G01N21/031 ,  G01N21/33 ,  G01N21/3504 ,  G01N2021/052 ,  G01N2021/317 ,  G02B5/06

Abstract: A chamber configured to increase an intensity of target radiation emitted therein is provided. The chamber includes an enclosure at least partially formed by a set of transparent walls. Each transparent wall can comprise a first material transparent to the target radiation and having a refractive index greater than 1.1 for the target radiation. The outer surface of the set of transparent walls can include a set of cavities, each cavity comprising an approximately prismatic void. Additionally, a medium located adjacent to an outer surface of the set of transparent walls can have a refractive index within approximately one percent of a refractive index of a vacuum for the target radiation.

Abstract translation: 提供了一种被配置为增加其中发射的目标辐射的强度的室。 该室包括至少部分地由一组透明壁形成的外壳。 每个透明壁可以包括对靶辐射透明的第一材料，并且对于目标辐射具有大于1.1的折射率。 一组透明壁的外表面可以包括一组空腔，每个空腔包括近似棱柱形的空隙。 此外，位于该组透明壁的外表面附近的介质可以具有在靶辐射的真空的折射率的约百分之一内的折射率。

公开(公告)号：US20150337442A1

公开(公告)日：2015-11-26

申请号：US14804401

申请日：2015-07-21

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： Igor Agafonov ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska ,  Alexander Dobrinsky

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  C23C16/52

CPC classification number: C23C16/45565 ,  C23C16/45563 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/0254 ,  H01L21/0262 ,  H01L22/12 ,  H01L22/26

Abstract: A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables.

Abstract translation: 提供制造半导体的解决方案。 实施例提供了一种化学气相沉积反应器，其包括化学气相沉积室。 位于化学气相沉积室中的衬底保持器可以以其第一角速度围绕其自身的轴线旋转，并且位于化学气相沉积室中的气体注入组件可以围绕气体注入部件的轴线以第二角度 速度。 角速度是可独立选择的，并且可以被配置成使得衬底晶片的表面上的每个点在由气体注入部件注入的气流中的行星轨迹中行进。 衬底保持器轴线和气体注入部件轴线之间的角度和/或衬底保持器轴线和气体注入部件轴线之间的距离可以是受控变量。

公开(公告)号：US20150295155A1

公开(公告)日：2015-10-15

申请号：US14683184

申请日：2015-04-10

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: H01L33/64 ,  H01L33/32 ,  H01L21/48 ,  H01L23/373 ,  H01L21/02 ,  H01L33/00 ,  H01L23/367

CPC classification number: H01L23/367 ,  H01L21/02428 ,  H01L21/0254 ,  H01L21/187 ,  H01L21/4871 ,  H01L21/76251 ,  H01L23/3732 ,  H01L23/3736 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/7786 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/641 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2933/0075 ,  H01L2924/00

Abstract: A structured substrate configured for epitaxial growth of a semiconductor layer thereon is provided. Structures can be formed on a side of the structured substrate opposite that of the growth surface for the semiconductor layer. The structures can include cavities and/or pillars, which can be patterned, randomly distributed, and/or the like. The structures can be configured to modify one or more properties of the substrate material such that growth of a higher quality semiconductor layer can be obtained.

Abstract translation: 提供了构造成用于在其上外延生长半导体层的结构化衬底。 可以在结构化衬底的与半导体层的生长表面相反的一侧上形成结构。 该结构可以包括可被图案化，随机分布和/或类似的空腔和/或支柱。 该结构可以被配置为修改衬底材料的一个或多个特性，使得可以获得更高质量的半导体层的生长。

公开(公告)号：US20150295133A1

公开(公告)日：2015-10-15

申请号：US14686845

申请日：2015-04-15

Applicant: Sensor Electronic Technology, Inc.

Inventor： Daniel D. Billingsley ,  Robert M. Kennedy ,  Wenhong Sun ,  Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/32 ,  H01L33/06 ,  H01L21/02 ,  H01L29/205 ,  H01L29/778 ,  H01L29/66 ,  H01L33/00 ,  H01L29/20

CPC classification number: H01L33/12 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/16225

Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.

Abstract translation: 提供了用于制造光电子器件的异质结构。 异质结构包括诸如n型接触或包覆层的层，其包括插入其中的薄子层。 薄的子层可以遍及整个层间隔开，并由用于该层的材料制成的中间子层隔开。 薄的子层可以具有与插入的子层不同的组成，其在异质结构的生长期间改变应力存在。

公开(公告)号：US20150295127A1

公开(公告)日：2015-10-15

申请号：US14683177

申请日：2015-04-10

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: H01L33/00 ,  H01L33/22 ,  H01L21/762 ,  H01L29/778 ,  H01L29/66 ,  H01L21/02 ,  H01L33/32 ,  H01L29/20

CPC classification number: H01L23/367 ,  H01L21/02428 ,  H01L21/0254 ,  H01L21/187 ,  H01L21/4871 ,  H01L21/76251 ,  H01L23/3732 ,  H01L23/3736 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/7786 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/641 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2933/0075 ,  H01L2924/00

Abstract: A composite substrate configured for epitaxial growth of a semiconductor layer thereon is provided. The composite substrate includes multiple substrate layers formed of different materials having different thermal expansion coefficients. The thermal expansion coefficient of the material of the semiconductor layer can be between the thermal coefficients of the substrate layer materials. The composite substrate can have a composite thermal expansion coefficient configured to reduce an amount of tensile stress within the semiconductor layer at room temperature and/or an operating temperature for a device fabricated using the heterostructure.

Abstract translation: 提供了一种被配置用于在其上外延生长半导体层的复合衬底。 复合衬底包括由具有不同热膨胀系数的不同材料形成的多个衬底层。 半导体层的材料的热膨胀系数可以在衬底层材料的热系数之间。 复合衬底可以具有复合热膨胀系数，其被配置为在室温下和/或使用异质结构制造的器件的工作温度下减少半导体层内的拉伸应力的量。

公开(公告)号：US20150255672A1

公开(公告)日：2015-09-10

申请号：US14721082

申请日：2015-05-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Jinwei Yang

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  B82Y10/00 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/778 ,  H01L33/0025 ,  H01L33/32

Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

公开(公告)号：US20150238645A1

公开(公告)日：2015-08-27

申请号：US14630692

申请日：2015-02-25

Applicant: Sensor Electronic Technology, Inc.

Inventor： Igor Agafonov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska ,  Saulius Smetona

IPC: A61L2/10 ,  A61L2/26 ,  A61L2/24

CPC classification number: A61L2/10 ,  A23L3/28

Abstract: A solution for disinfecting an area using ultraviolet radiation is provided. The solution can include an enclosure including at least one ultraviolet transparent window and a set of ultraviolet radiation sources located adjacent to the at least one ultraviolet transparent window. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed through the at least one ultraviolet transparent window. An input unit can be located on the enclosure and configured to generate an electrical signal in response to pressure applied to the enclosure. A control unit can be configured to manage the ultraviolet radiation by monitoring the electrical signal generated by the input unit and controlling, based on the monitoring, the ultraviolet radiation generated by the set of ultraviolet radiation sources.

Abstract translation: 提供了一种使用紫外线辐射消毒区域的方案。 该解决方案可以包括包括至少一个紫外线透明窗口和位于该至少一个紫外线透明窗口附近的一组紫外线辐射源的外壳。 紫外线辐射源组可被配置成产生穿过至少一个紫外线透明窗口的紫外线辐射。 输入单元可以位于机箱上并被配置为响应于施加到外壳的压力而产生电信号。 控制单元可以被配置为通过监视由输入单元产生的电信号来控制紫外线辐射，并且基于该监视来控制由该组紫外线辐射源产生的紫外线辐射。