-
公开(公告)号：JP2001185018A
公开(公告)日：2001-07-06
申请号：JP36707399
申请日：1999-12-24
Applicant: TOSHIBA CORP
Inventor： ONO TOMIO , SAKAI TADASHI , SAKUMA HISASHI , CHO TOSHI
Abstract: PROBLEM TO BE SOLVED: To provide an electron emission element having a small potential drop and electron emission of a lower threshold value and a method of manufacturing the same. SOLUTION: At outer periphery of an emitter of which a sharpened tip consists of carbonaceous electron emission substance such as diamond 16 or the like of convex shape 19, a thin conductive layer 15 is installed to expose the tip of the emitter.
-
公开(公告)号：JP2001176377A
公开(公告)日：2001-06-29
申请号：JP36159799
申请日：1999-12-20
Applicant: TOSHIBA CORP
Inventor： SAKUMA HISASHI , ONO TOMIO , SAKAI TADASHI , CHO TOSHI
Abstract: PROBLEM TO BE SOLVED: To facilitate impurity diffusion or doping into diamond and to increase a doping effect. SOLUTION: Into a supporting substrate, for example Si substrate 101 to make up diamond, a high-concentration boron is diffused by using an ion- implanting technology. Or, phosphorus is diffused into another area. By forming diamond 106 by the supporting substrate into which impurities have been diffused, diffusion of the impurities from the supporting substrate occurs in the initial process of the formation. This technology facilitates the diffusion of impurities into diamond 106, and enables to make up diffusion areas of many kinds of diffusion areas of impurities on the same surface.
-
公开(公告)号：JP2001143603A
公开(公告)日：2001-05-25
申请号：JP32702699
申请日：1999-11-17
Applicant: TOSHIBA CORP
Inventor： KAMIKAWAJI TORU , SHIOIRI SATORU , SAKAI TADASHI
Abstract: PROBLEM TO BE SOLVED: To provide a method of fabricating a field emission cold cathode operating in high voltage with high reliability without damaging the gate and anode. SOLUTION: A conditioning electrode 15 is so arranged on a gate 7 as to make its openings 15a not superpose with the gate vacancy 7a of the gate during conditioning. After completing conditioning, the conditioning electrode 15 is moved by a handle 16 relative to the gate 7 so as to make the openings 15a coincide wit the gate vacancy 7a. This protects the openings 7a and the emitter 4 from being damaged.
-
公开(公告)号：JP2000277000A
公开(公告)日：2000-10-06
申请号：JP8189399
申请日：1999-03-25
Applicant: TOSHIBA CORP
Inventor： ONO TOMIO , SAKAI TADASHI , NAKAYAMA KAZUYA , CHO TOSHI
Abstract: PROBLEM TO BE SOLVED: To easily emit electrons and resolve a problem of a high operating voltage by forming a projection, which is sharpened at the tip and is made of a carbonic electron emitting material, on top of a lug formed on a conductive structural substrate. SOLUTION: A thermal oxidation SiO2 layer 24 is formed on an n-type Si substrate 21 by dry oxidation, resist 28 is applied on it by spin coating, patterning such as exposure and development is applied, and the thermal oxidation SiO2 layer 24 is etched by an NH4/HF mixed aqueous solution to form a mask 22. The thermal oxidation SiO2 layer 24 is removed by etching, and a projection 25 of a carbonic electron emitting material is selectively grown only on top of a lug 23 by a hot filament CVD method. A SiO2 layer 26 as an insulating layer and a Mo layer 27 as a gate layer are formed, the resist 28 is applied, and the tip of an emitter is exposed by ashing. The projection 25 is exposed, the resist 28 is removed, and the gated emitter coated with the carbonic electron emitting material is obtained.
-
公开(公告)号：JP2000251616A
公开(公告)日：2000-09-14
申请号：JP4980399
申请日：1999-02-26
Applicant: TOSHIBA CORP
Inventor： CHO TOSHI , SAKAI TADASHI , ONO TOMIO , SAKUMA HISASHI
Abstract: PROBLEM TO BE SOLVED: To ensure a low voltage drive and a large discharge current by implementing selection of material at each stage of implantation of electron back contact, transportation in an emitter and field emission to the vacuum through a diamond, under proper conditions. SOLUTION: A silicon substrate 12, with a mold is formed by anishotropic etching on a silicon substrate 11, then an insulating oxide film 13 is formed, and thereonto a carbon nanotube thin film 14 is filled in the mold. Thereafter, the transfer to a substrate having an Fe thin film 15 deposited thereon, the substrate is etched, and thereby an emitter array 17, an SiO2 insulation film 18, a silicon gate layer 19 are respectively formed. Then, irradiation of a laser beam is performed by a CO2 laser 110, whose output power is 3 kW. Successively, heat treatment at 900 deg.C is carried out to form a tip of diamond. Finally, an anode electrode 12 is formed.
-
Patent Agency Ranking
公开(公告)号：JPH11154471A
公开(公告)日：1999-06-08
申请号：JP6576098
申请日：1998-03-16
Applicant: TOSHIBA CORP
Inventor： ONO TOMIO , SAKAI TADASHI , SAKUMA HISASHI , NAKAYAMA KAZUYA
Abstract: PROBLEM TO BE SOLVED: To eliminate loss at a gate, prevent the breakage of an element. SOLUTION: An electron emitting element comprises an emitter 2 emitting electrons, a gate electrode 1 extracting electrons by applying an electric field to the emitter 2, an anode electrode 3 collecting the electrons extracted by the gate electrode 1. A resistor 23 is connected between the gate electrode 1 and a signal applied to the agate electrode 1. A signal source 5 is provided between the emitter 2 and the gate electrode 1, and a voltage source 4 is provided between the gate electrode 1 and the anode electrode 3.
-
公开(公告)号：JPH10149778A
公开(公告)日：1998-06-02
申请号：JP23604697
申请日：1997-09-01
Applicant: TOSHIBA CORP
Inventor： SAKAI TADASHI , ONO TOMIO , SAKUMA HISASHI , OHASHI HIROMICHI , NAKAYAMA KAZUYA
Abstract: PROBLEM TO BE SOLVED: To provide a fine cold cathode tube whose loss as a switching element is low and which can apply necessary electric current following the outside voltage to be applied to a main circuit with which an anode is to be connected and can be used at high voltage and high current density. SOLUTION: This fine cold cathode tube comprises a cold cathode 11 whose tip part has a projected shape, an anode 16 installed on the opposite to the cold cathode 11 to capture emitted electrons from the cold cathode 11, and a control electrode 13 installed near the cold cathode 11 to control the emitted electrons from the cold cathode 11. In this case, the cold cathode 11 is made of diamond, which has a lower electron emission barrier as compared with the control electrode 13 made of Si and positive potential is applied to the anode 16 in relation to the cold cathode 11, and negative potential or the same potential as that to be applied to the cold cathode 11 is applied to the control electrode 13 based on the necessity.
-
公开(公告)号：JPH09181353A
公开(公告)日：1997-07-11
申请号：JP33671595
申请日：1995-12-25
Applicant: TOSHIBA CORP
Inventor： KIMURA HIROSAKU , IWASAKI SHINGO , SAKAI TADASHI
Abstract: PROBLEM TO BE SOLVED: To enhance luminous intensity of Si fine particles of the order of manometer. SOLUTION: Si fine particles used as material for a light emitting device are manufactured through such a method that a piece of Si is vaporized by a heater and deposited on the surface of an organic solvent solidified on the wall of a glass chamber 12 as cooled down, and then the solid organic solvent is stopped from being cooled down and liquefied. By this setup, Si fine particles 25 are produced in organic solvent, and KOH of pH10 is added to the organic solvent which contains Si fine particles 25 for alkali processing.
-
公开(公告)号：JPH0982215A
公开(公告)日：1997-03-28
申请号：JP23221195
申请日：1995-09-11
Applicant: TOSHIBA CORP
Inventor： SAKAI TADASHI , ONO TOMIO , CHO TOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a uniform and reproductive vacuum micro element with a gate conductive layer electrically insulated and arranged around a quantum size of thin terminal in such a manner that the short small diameter of the opening of an emitter is equal to or less than a shortest distance between emitter and gate metals. SOLUTION: A Si substrate 1 with n-type impurities doped at a high concentration is thermally oxidized to form a thermally oxidized film 2 of thickness 1.5μm, e.g. on the surface. Then, a 0.2μm thick MO as a gate conductive layer 3 is spattered all over and a 1.0μm thick SiN film 4 is laminated thereon with CVD. An array-patterned photoresist mask with an 2μm diameter of circular opening is formed and laminated films are etched in sequence by using PIE, antimony fluoride etching to expose the Si surface. This is anode-formed in hydrofluoric acid to make the surface porous. Only the shape of the end of an emitter is sharpened so that an obtained element has no leak current to a gate at 1μA per unit opening when 200V voltage is applied to an anode.
-
公开(公告)号：JPH0897398A
公开(公告)日：1996-04-12
申请号：JP23083794
申请日：1994-09-27
Applicant: TOSHIBA CORP
Inventor： CHO TOSHI , SAKAI TADASHI , SUZUKI TAKEAKI , TAKAHASHI SHIGEKI
Abstract: PURPOSE: To form quantum wires or quantum dots having an extremely steep quantum potential barrier on a substrate without giving damages to the substrate by a method where n-type semiconductor quantum wires or quantum dots are interposed between potential barriers of a porous semiconductor. CONSTITUTION: Phosphor impurities of high concentration are doped by an FIB ion implantation of a p-type impurity silicon substrate 1 of which the surface is processed, and wires 2 of an n-type region are formed in a p-type region. Next, it is dipped in a hydrofluoric acid solution and optically formed by an Xe lamp irradiation. Then, the p-type region is selectively etched as the anode and turned to a porous silicon layer 3 wide in a band gap. At this time, the n-type wires 2 are not etched to become a quantum wires, and porous silicon layers 3 work as quantum potential barriers. As described above, by a technique not using processes such as transfer, exposure to light, development or the like of patterns, a quantum wire array excellent in controllability of the wire width can be realized.
-
-
-
-
-
-
-
-
-
Search Results
189
records
(took 0.053 seconds)
