Abstract:
The invention relates to a method for producing surface micromechanical structures having a high aspect ratio. At least one sacrificial layer (20) is provided between a substrate (30) and a functional layer (10). Trenches (60, 61) are provided in said functional layer (10) by means of a plasma etching process, said trenches uncovering at least some surface areas (21, 22) of the sacrificial layer (20). According to the invention, a further layer (70) is deposited at least partially on the lateral walls of the trenches, but not on the uncovered surface areas (21, 22) of the sacrificial layer (20), in order to increase the aspect ratio of said trenches. The invention also relates to a sensor, especially an acceleration or rotational rate sensor.
Abstract:
An inertia force sensor having a mass body (11) which moves when force is applied to the sensor, at least one holding beam (12) for holding the mass body (11), and an anchor portion (13) for fixing an end portion of the holding beam (12), the sensor being designed to detect inertia force, which acts on the mass body (11), on the basis of a movement of the mass body (11). The sensor is characterized in that the mass body (11) is composed of a free standing structure (9) which is formed by removing an inner part of a silicon substrate (1) therefrom by means of an etching process within a single step, and the anchor portion (13) is composed of at least a part of a main body of the silicon substrate. Because the inertia force sensor is composed of single crystal silicon, its mechanical properties and reliability may be highly improved.
Abstract:
In accordance with one embodiment, a single chip combination inertial and pressure sensor device includes a substrate, an inertial sensor including a movable sensing structure movably supported above the substrate, and a first fixed electrode positioned adjacent to the movable sensing structure, and a pressure sensor including a gap formed in the sensor at a location directly above the movable sensing structure, and a flexible membrane formed in a cap layer of the device, the flexible membrane defining a boundary of the gap and configured to flex toward and away from the gap in response to a variation in pressure above the flexible membrane.
Abstract:
In one embodiment, the process flow for a capacitive pressures sensor is combined with the process flow for an inertial sensor. In this way, an inertial sensor is realized within the membrane layer of the pressure sensor. The device layer is simultaneously used as z-axis electrode for out-of-plane sensing in the inertial sensor, and/or as the wiring layer for the inertial sensor. The membrane layer (or cap layer) of the pressure sensor process flow is used to define the inertial sensor sensing structures. Insulating nitride plugs in the membrane layer are used to electrically decouple the various sensing structures for a multi-axis inertial sensor, allowing for fully differential sensing.
Abstract:
In accordance with one embodiment, a single chip combination inertial and pressure sensor device includes a substrate, an inertial sensor including a movable sensing structure movably supported above the substrate, and a first fixed electrode positioned adjacent to the movable sensing structure, and a pressure sensor including a gap formed in the sensor at a location directly above the movable sensing structure, and a flexible membrane formed in a cap layer of the device, the flexible membrane defining a boundary of the gap and configured to flex toward and away from the gap in response to a variation in pressure above the flexible membrane.
Abstract:
In one embodiment, the process flow for a capacitive pressures sensor is combined with the process flow for an inertial sensor. In this way, an inertial sensor is realized within the membrane layer of the pressure sensor. The device layer is simultaneously used as z-axis electrode for out-of-plane sensing in the inertial sensor, and/or as the wiring layer for the inertial sensor. The membrane layer (or cap layer) of the pressure sensor process flow is used to define the inertial sensor sensing structures. Insulating nitride plugs in the membrane layer are used to electrically decouple the various sensing structures for a multi-axis inertial sensor, allowing for fully differential sensing.
Abstract:
A MEMS sensor comprises a substrate and at least one proof mass having a first plurality of combs, wherein the proof mass is coupled to the substrate via one or more suspension beams such that the proof mass and the first plurality of combs are movable. The MEMS sensor also comprises at least one fixed anchor having a second plurality of combs. The first plurality of combs is interleaved with the second plurality of combs. Each of the combs in the first plurality of combs and the second plurality of combs comprises a plurality of conductive layers electrically isolated from each other by one or more non-conductive layers. Each conductive layer is individually coupled to a respective electric potential such that fringing electric fields are screened to reduce motion of the first plurality of combs along a sense axis due to the fringing electric fields.
Abstract:
A micro-electromechanical device includes a semiconductor body (5), in which at least one first microstructure (2) and one second microstructure (3) of reference are integrated. The first microstructure (2) and the second microstructure (3) are arranged in the body (5) so as to undergo equal strains as a result of thermal expansions of said body (5; 105; 205; 305). Furthermore, the first microstructure (2) is provided with movable parts (6) and fixed parts (7) with respect to the body (5), and the second microstructure (3) has a shape that is substantially symmetrical to the first microstructure (2) and is fixed with respect to the body (5).
Abstract:
An inertial sensor includes oscillating-type angular velocity sensing element (32), IC (34) for processing signals supplied from angular velocity sensing element (32), capacitor (36) for processing signals, and package (38) for accommodating angular velocity sensing element (32), IC (34), capacitor (36). Element (32) and IC (34) are housed in package (38) via a vibration isolator, which is formed of TAB tape (46), plate (40) on which IC (34) is placed, where angular velocity sensing element (32) is layered on IC (34), and outer frame (44) placed outside and separately from plate (40) and yet coupled to plate (40) via wiring pattern (42).
Abstract:
L'invention concerne un dispositif électro-mécanique comportant un boitier et au moins un composant reporté dans le boitier caractérisé en ce qu 'il comporte en outre au moins une interface à base de nanotubes (12) assurant une liaison mécanique de filtrage vibratoire et thermique entre ledit composant et le boitier. Avantageusement l'interface à base de nanotubes (12) peut également servir d'interface électrique et/ou thermique avec les contacts électriques dont est équipé le boîtier.