公开(公告)号：EP1452481B1

公开(公告)日：2007-12-19

申请号：EP04100440.9

申请日：2004-02-05

Applicant: Dalsa Semiconductor Inc.

Inventor： Ouelett, Luc ,  Antaki, Robert

IPC: B81B7/00 ,  B81C5/00 ,  B81B3/00 ,  B81B7/02

CPC classification number: B81C1/00246 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169 ,  B81C2203/0735

公开(公告)号：EP1846320A1

公开(公告)日：2007-10-24

申请号：EP06709238.7

申请日：2006-02-02

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： FLEURY, Gatien ,  CHARVET, Pierre-Louis

IPC: B81B3/00 ,  H01H50/00

CPC classification number: B81C1/00666 ,  B81B2201/016 ,  B81C2201/0167

Abstract: The invention relates to a micromechanical device comprising a mobile beam (1), said beam being attached by the two ends (2) thereof to a rigid frame (3) provided with two arms (4) each having two ends (5). The ends (5) of an arm (4) are respectively fixed to the two ends (2) of the mobile beam (1). Each arm (4) has a central part (6) arranged between the two ends (5) of the corresponding arm (4). A rear face of the central part (6) of each arm (4) is attached to a base support (10). The frame (3) comprises at least one stressed element (11) for adjusting the stressed state of the beam. The stressed element (11) can be centred between the front face and the rear face of the corresponding arm (4). The frame (3) can comprise pairs of front and rear stressed elements (11) which are respectively arranged on the front face and the rear face of the arms (4) in such a way that they face each other.

公开(公告)号：EP1592642A2

公开(公告)日：2005-11-09

申请号：EP04700193.8

申请日：2004-01-05

Applicant: Honeywell International Inc.

Inventor： HORNING, Robert, D. ,  SCULLARD, Timothy, Louis ,  MCDONALD, Robinson

IPC: B81B3/00

CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  Y10T74/12

Abstract: A method for controlling bow in wafers (50) which utilize doped layers is described. The method includes depositing a silicon-germanium layer (52) onto a substrate (14), depositing an undoped buffer layer (56) onto the silicon-germanium layer, and depositing a silicon-boron layer (58) onto the undoped layer.

公开(公告)号：EP1452481A3

公开(公告)日：2005-10-12

申请号：EP04100440.9

申请日：2004-02-05

Applicant: Dalsa Semiconductor Inc.

Inventor： Ouelett, Luc ,  Antaki, Robert

IPC: B81B7/00 ,  B81C5/00 ,  B81B3/00 ,  B81B7/02

CPC classification number: B81C1/00246 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169 ,  B81C2203/0735

Abstract: A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.

公开(公告)号：EP1322545A2

公开(公告)日：2003-07-02

申请号：EP01973512.5

申请日：2001-09-24

Applicant: Honeywell International Inc.

Inventor： DWYER, Paul

IPC: B81C5/00

CPC classification number: B81C99/0035 ,  B81C1/00666 ,  B81C99/0065 ,  B81C2201/0167

Abstract: A method for delicately adjusting an orientation of features in completed micro-machined electromechanical sensor (MEMS) devices after initial formation and installation within the device packaging to trim one or more performance parameters of interest, including modulation, bias and other dynamic behaviors of the MEMS devices.

公开(公告)号：EP1166352A1

公开(公告)日：2002-01-02

申请号：EP99902030.8

申请日：1999-02-04

Applicant: Institute of Microelectronics ,  TYCO Electronics Logistics AG

Inventor： UPPILI, Sridhar ,  VICTOR, D., Samper ,  FOO, Pang, Dow ,  WAGENAAR, Dirk ,  KAY, Krupka ,  SCHLAAK, Helmut

IPC: H01L23/00 ,  H01H59/00

CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  H01H59/0009 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A microstructure relay comprising an s-shaped support member is provided. The s-shape support member creates over-travel in the relay in order to produce high contact force and low contact resistance over the lifetime of the relay. Compressive and tensile stress-inducing layers on appropriate parts of the support member induce it to bend as desired.

公开(公告)号：EP0663692B1

公开(公告)日：2000-02-23

申请号：EP94120791.2

申请日：1994-12-27

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： Biebl, Markus

IPC: H01L23/00 ,  G01L21/00

CPC classification number: G01L9/0042 ,  B81C1/00666 ,  B81C2201/0167

公开(公告)号：EP0663692A3

公开(公告)日：1997-03-12

申请号：EP94120791.2

申请日：1994-12-27

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： Biebl, Markus

IPC: H01L23/00 ,  G01L21/00

CPC classification number: G01L9/0042 ,  B81C1/00666 ,  B81C2201/0167

Abstract: Zur Herstellung einer Schicht (15) mit reduzierten mechanischen Spannungen wird die Schicht (15) aus mindestens zwei Teilschichten (13, 14) zusammengesetzt, die so aufeinander abgestimmt sind, daß sich die Streßgradienten in den beiden Schichten (13, 14) im wesentlichen kompensieren. Das Verfahren ist insbesondere bei der Herstellung von Strukturen in der Oberflächen-Mikromechanik einsetzbar.

公开(公告)号：JP5877852B2

公开(公告)日：2016-03-08

申请号：JP2013554905

申请日：2012-02-24

Applicant: ハルティング コマンデイトゲゼルシャフト アウフ アクチエン ,  HARTING KGaA

Inventor： ハンス−ハインリヒ ガッツェン ,  ティム グリースバッハ

IPC: B81C1/00 ,  B81B7/02

CPC classification number: H05K1/0271 ,  B81B3/0072 ,  H05K3/303 ,  B81B2201/11 ,  B81C2201/0167 ,  Y10T29/49133

公开(公告)号：JP2015195717A

公开(公告)日：2015-11-05

申请号：JP2015122422

申请日：2015-06-01

Applicant: 臼間 幹章

Inventor： 臼間 幹章

IPC: H02K7/02

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81C1/00142 ,  B81C1/00666 ,  G02B26/001 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C2201/0167 ,  Y10S359/90

Abstract: 【課題】製作が容易で、異音や振動を低減し、偏心回転を可能にした発電装置用の回転装置を提供する。 【解決手段】垂直型の真円フライホイール100の回転中心部100cに水平回転駆動軸200を装着し、前記真円フライホイールの両側面の各々における円周方向に等回転角度間隔で且つ半径方向線に沿ってガイド機構500Gにより摺動自在に複数の弾み錘り300を配置し、前記真円フライホイールの両側面間の弾み錘りの相対配置関係は前記等回転角度間隔と同一又は所定回転角度ずらして配置し、前記各弾み錘りの側面にガイドロール400を装着し、前記真円フライホイールの両側面各々に平行に対面して真円の軌条ガイド500を位置固定し、前記真円の軌条ガイドは前記弾み錘りのガイドロールを真円の軌跡で案内し且つ真円の軌条ガイドの中心を真円フライホイールの中心位置から水平に又は斜め下方に所定量偏位させた発電装置用の回転装置。 【選択図】図1

Abstract translation: 要解决的问题：提供一种能够容易地制造的发电装置的旋转装置，能够减少异常声音和振动并且可以偏心旋转。解决方案：在发电装置的旋转装置中，水平旋转/驱动轴 200安装在垂直型全圆形飞轮100的旋转中心部100c上; 多个弹性重物300在圆周方向上以均匀的旋转角度间隔并且沿着全向飞轮的两侧中的每一侧的径向线布置，以由引导机构500G自由滑动; 全圆形飞轮的两侧之间的弹性重量的相对布置关系以与均匀旋转角度的间隔相同的间隔布置或者以预定的旋转角度被移位; 每个弹性重量的一侧安装有引导辊400; 整圆轨道导轨500在整圈飞轮的两侧均匀地紧固在平面上; 弹性重量的引导辊在整圈轨迹中被引导，并且整圆导轨的中心在水平方向上或从整圆的中心位置向斜下方移动预定量 飞轮。