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    DEVICE FOR CONTROLLING A SELF-CONDUCTING N-CHANNEL OUTPUT STAGE FIELD EFFECT TRANSISTOR
    141.
    发明申请
    DEVICE FOR CONTROLLING A SELF-CONDUCTING N-CHANNEL OUTPUT STAGE FIELD EFFECT TRANSISTOR 审中-公开

    公开(公告)号：US20200059209A1

    公开(公告)日：2020-02-20

    申请号：US16498990

    申请日：2018-03-13

    Applicant: FORSCHUNGSVERBUND BERLIN E.V.

    Inventor： Thomas Hoffmann

    IPC: H03F3/217 ,  H03F1/02 ,  H03K17/06

    Abstract: A device (100) for driving a self-conducting n-channel output stage field effect transistor (V1) comprising a control signal input (110), a control signal output (120) for connection to a gate electrode (V1G) of the output stage field effect transistor (V1), a first node (N1) connected to the control signal output (120), a second node (N2), and a first transistor (V4). A source electrode (V4S) of the first transistor (V4) is connected to the first node (N1), a gate electrode (V4G) of the first transistor (V4) is connected to the second node (N2) and a drain electrode (V4D) of the first transistor (V4) is either connected to the source electrode of the output field effect transistor (V1) or connected to a supply voltage (+Vdd). A resistor (R1) is connected with one end to the second node (N2). The device (100) is characterized in that the resistor (R1) is connected at the other end to the first node (N1).The first transistor (V4) can be used to cause the supply voltage (Vdd) to be applied to the control signal output when a low-level signal is applied to the control signal input (110).

    DIODE LASER WITH IMPROVED MODE PROFILE
    142.
    发明申请
    DIODE LASER WITH IMPROVED MODE PROFILE 审中-公开

    公开(公告)号：US20200052465A1

    公开(公告)日：2020-02-13

    申请号：US16478558

    申请日：2018-01-25

    Applicant: FORSCHUNGSVERBUND BERLIN E.V.

    Inventor： Thorben KAUL ,  Götz ERBERT ,  Paul CRUMP

    IPC: H01S5/20 ,  H01S5/343

    Abstract: A diode laser comprises an n-type first cladding layer, an n-type first waveguide layer arranged on the first cladding layer, an active layer suitable for radiation generation and arranged on the first waveguide layer, a p-type second waveguide layer arranged on the active layer, a p-type second cladding layer which is arranged on the second waveguide layer, an n-type first intermediate layer being formed as a transition region between the first waveguide layer and the active layer, and a p-type second intermediate layer being formed as a transition region between the second waveguide layer and the active layer. The diode laser according to the invention is characterized in that the asymmetry ratio of the thickness of the first intermediate layer to the sum of the thickness of the first intermediate layer and the thickness of the second intermediate layer is less than or greater than 0.5.

    Optical Pulse Generator And Method For Operating An Optical Pulse Generator
    143.
    发明申请
    Optical Pulse Generator And Method For Operating An Optical Pulse Generator 审中-公开

    公开(公告)号：US20200033446A1

    公开(公告)日：2020-01-30

    申请号：US16338405

    申请日：2017-09-15

    Applicant: FORSCHUNGSVERBUND BERLIN E.V.

    Inventor： Armin Liero ,  Andreas Klehr ,  Thomas Hoffmann

    IPC: G01S7/484 ,  H01S5/042 ,  H01S5/022

    Abstract: This invention concerns an optical pulse generator and a method for operating an optical pulse generator.In particular, this invention concerns an optical pulse generator for high frequency (HF) pulse width modulation in LiDAR systems.The optical pulse generator according to the invention comprises an active optical component (10) adapted to emit optical radiation, wherein the optical component (10) has contact surfaces (12, 14) for electrical contacting; means for electronically driving (20) the optical component (10) adapted to excite the optical component (10) to pulsed emission of optical radiation, wherein the means for electronically driving (20) has contact surfaces (22, 24) for electrical contacting; a first submount (30), wherein the means for electronically driving (20) is arranged on the first submount (30); a second submount (40), wherein the optical component (10) is arranged on the second submount. The optical pulse generator according to the invention is characterized in that the optical component (10) is arranged between the first submount (30) and the second submount (40), wherein at least one contact surface (22, 24) of the means for electronically driving (20) is connected directly or by means of a solder point to at least one contact surface (12, 14) of the optical component (10).The method according to the invention of operating an optical pulse generator is based on an application of the optical pulse generator according to the invention.

    RADIATION DETECTOR AND METHOD FOR PRODUCING SAME
    144.
    发明申请
    RADIATION DETECTOR AND METHOD FOR PRODUCING SAME 审中-公开

    公开(公告)号：US20190393374A1

    公开(公告)日：2019-12-26

    申请号：US16312771

    申请日：2018-01-10

    Applicant: FORSCHUNGSVERBUND BERLIN E.V.

    Inventor： Adam RÄMER ,  Sergey SHEVCHENKO

    IPC: H01L31/113 ,  H01L31/112

    Abstract: A radiation detector comprises an antenna structure; and a field effect transistor structure having a source region, a gate region, and a drain region, arranged on a substrate and forming mutually independent electrically conductive electrode structures through metallization, wherein the gate electrode structure completely encloses the source electrode structure or the drain electrode structure in a first plane; the enclosed electrode structure extends up to above the gate electrode structure and there overlaps the enclosure in a second plane above the first plane at least in sections in a planar manner; wherein an electrically insulating region for forming a capacitor with a metal-insulator-metal structure is arranged between the regions of the gate electrode structure overlapped by the enclosed electrode structure.

    METHOD AND DEVICE FOR RAMAN SPECTROSCOPY
    146.
    发明申请
    METHOD AND DEVICE FOR RAMAN SPECTROSCOPY 审中-公开

    公开(公告)号：US20190323891A1

    公开(公告)日：2019-10-24

    申请号：US16313668

    申请日：2017-06-23

    Applicant: FORSCHUNGSVERBUND BERLIN E.V.

    Inventor： Bernd SUMPF ,  Martin MAIWALD

    IPC: G01J3/44 ,  G01N21/65 ,  G01J3/10

    Abstract: Raman spectroscopy methods and devices are disclosed.The method includes irradiation of excitation radiation onto a sample to be examined. The sample is irradiated with a first excitation radiation of a first excitation wavelength and a different second excitation radiation of a second excitation wavelength. The first excitation radiation scattered by the sample is wavelength-selective filtered by means of a passive filter element. A transmitted filter wavelength of the filter element differs from at least the first excitation wavelength and the second excitation wavelength. A first intensity is determined through a single-channel detector assigned to the filter wavelength from the first excitation radiation scattered and filtered by the sample. Additionally, the filter element wavelength-selective filters the second excitation radiation scattered by the sample. A second intensity is determined through the single-channel detector assigned to the filter wavelength from the second excitation radiation scattered and filtered by the sample.

    WAVEGUIDE STRUCTURE AND OPTICAL SYSTEM WITH WAVEGUIDE STRUCTURE
    148.
    发明申请
    WAVEGUIDE STRUCTURE AND OPTICAL SYSTEM WITH WAVEGUIDE STRUCTURE 审中-公开

    公开(公告)号：US20190273359A1

    公开(公告)日：2019-09-05

    申请号：US16327419

    申请日：2017-08-21

    Applicant: FORSCHUNGSVERBUND BERLIN E.V.

    Inventor： Götz ERBERT ,  Jörg FRICKE ,  Andre MÜLLER ,  Hans WENZEL ,  Bernd SUMPF ,  Katrin PASCHKE

    IPC: H01S5/10 ,  H01S5/125 ,  G02B6/122 ,  G02B6/124

    Abstract: The inventive waveguide structure comprises a first waveguide region having a constant first width adapted to guide electromagnetic waves mode sustainably along its longitudinal axis; a second waveguide region adapted to guide electromagnetic waves mode sustainably along its longitudinal axis, wherein the longitudinal axis of the first waveguide region and the longitudinal axis of the second waveguide region form a common longitudinal axis of the waveguide structure, wherein a first end face of the first waveguide region and a first end face of the second waveguide region are aligned with each other, the width of the first end face of the second waveguide region corresponding to the first width, and the width of the second waveguide region along its longitudinal axis widens from the first end face to a second end face to a second width greater than the first width.

    Light-conducting device, device having a light-conducting device, and means for emitting linear parallel light beams
    149.
    发明授权
    Light-conducting device, device having a light-conducting device, and means for emitting linear parallel light beams 有权

    公开(公告)号：US10295831B2

    公开(公告)日：2019-05-21

    申请号：US15120379

    申请日：2015-02-24

    Applicant: FORSCHUNGSVERBUND BERLIN E.V.

    Inventor： Bernd Eppich

    IPC: G02B27/30 ,  G02B27/09 ,  G02B19/00 ,  G02B17/00 ,  G02B17/04 ,  G02B5/04

    Abstract: The disclosure relates to a light-conducting device.The light-conducting device includes k>1 first deflection devices that are parallel to one another and arranged along a first direction (X), and k second deflection devices that are parallel to one another and arranged along a second direction (Y) perpendicular to the first direction. A third direction (Z) is perpendicular to the first and second direction (X, Y). Each of the second deflection devices is arranged in a same fourth direction (P) with respect to one of the first deflection devices. The first deflection devices comprise optical axes directed in a fifth direction, and the second deflection devices comprise optical axes directed opposite to the fifth direction. The fifth direction is an angle bisector of an angle between the third and the fourth direction.

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