公开(公告)号：US20180145481A1

公开(公告)日：2018-05-24

申请号：US15736631

申请日：2016-03-09

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Jörg FRICKE ,  Götz ERBERT ,  Paul CRUMP ,  Jonathan DECKER

IPC: H01S5/12 ,  H01S5/026 ,  H01S5/20

CPC classification number: H01S5/1225 ,  H01S5/026 ,  H01S5/1221 ,  H01S5/1231 ,  H01S5/2086

Abstract: Laser diode comprises an active layer; a waveguiding region at least partially surrounding the active layer; a rear facet; a front facet designed for decoupling laser radiation, wherein the active layer extends at least partially along a first axis (X) between the rear facet and the front facet; and a grid operatively connected to the waveguiding region, wherein the grid comprises a plurality of webs and trenches designed such that an average increase of a coupling parameter P for the plurality of trenches along the grid is non-zero, wherein the coupling parameter P of a trench is defined by the formula, wherein dres is a distance of the trench to the active layer, w is a width of the trench and Δn is the refractive index difference between a refractive index of the trench and a refractive index of a material surrounding the trench.

公开(公告)号：US20200052465A1

公开(公告)日：2020-02-13

申请号：US16478558

申请日：2018-01-25

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Thorben KAUL ,  Götz ERBERT ,  Paul CRUMP

IPC: H01S5/20 ,  H01S5/343

Abstract: A diode laser comprises an n-type first cladding layer, an n-type first waveguide layer arranged on the first cladding layer, an active layer suitable for radiation generation and arranged on the first waveguide layer, a p-type second waveguide layer arranged on the active layer, a p-type second cladding layer which is arranged on the second waveguide layer, an n-type first intermediate layer being formed as a transition region between the first waveguide layer and the active layer, and a p-type second intermediate layer being formed as a transition region between the second waveguide layer and the active layer. The diode laser according to the invention is characterized in that the asymmetry ratio of the thickness of the first intermediate layer to the sum of the thickness of the first intermediate layer and the thickness of the second intermediate layer is less than or greater than 0.5.

公开(公告)号：US20180019571A1

公开(公告)日：2018-01-18

申请号：US15551758

申请日：2016-02-18

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Joerg FRICKE ,  Jonathan DECKER ,  Paul CRUMP ,  Goetz ERBERT

IPC: H01S5/10 ,  H01S5/042 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/50

CPC classification number: H01S5/1064 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/1203 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/50

Abstract: The invention relates to a laser diode (10) which has at least one active layer (12) which is arranged within a resonator (14) and is operatively connected to a outcoupling element (16), and further at least one contact layer (18) for coupling charge carriers into the active layer (12), wherein the resonator (14) comprises at least a first section (20) and a second section (22), wherein the second section (22) comprises a plurality of separate resistor elements (24) having a specific electrical resistivity greater than the specific electrical resistivity of the regions (26) between adjacent resistor elements (24), wherein a width (W3) of the resistor elements (24) along a longitudinal axis (X1) of the active layer (12) is less than 20 μm, and a projection of the resistor elements (24) on the active layer (12) along the first axis (Z1) overlap with at least 10% of the active layer (12).