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公开(公告)号：JPH08225398A
公开(公告)日：1996-09-03
申请号：JP3486095
申请日：1995-02-23
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： IMAI TAKAHIRO , TANAKA MOTOYUKI , FUJIMORI NAOHARU
Abstract: PURPOSE: To obtain an oxide thin film having rock crystal structure of polycrystal or single crystal having an arbitrary film thickness without requiring large-scale apparatus used by hydrothermal synthetic method. CONSTITUTION: This oxide thin film having a rock crystal type crystalline structure comprising >=1 layer, consisting essentially of silicon dioxide or germanium dioxide or their mixture and having 5nm to 50μm thickness is formed on a substrate by vapor phase deposition method at 400-1200 deg.C substrate temperature using a raw material containing at least Si and/or Ge and preferably further containing one or more kinds of alkali metals.
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公开(公告)号：JPH08213871A
公开(公告)日：1996-08-20
申请号：JP1689395
申请日：1995-02-03
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： TANAKA MOTOYUKI , IMAI TAKAHIRO , FUJIMORI NAOHARU
Abstract: PURPOSE: To reduce the cost and to allow the method to have provision for a higher frequency vibrator by manufacturing the vibrator with an optional film thickness and shape without the need for a large scale equipment like a hydrothermal synthesis. CONSTITUTION: A single crystal thin film crystal whose thickness is 5nm or over and 50μm or less manufactured by the sol gel method is used for a vibration section. The crystal vibrator is manufactured by forming an oxide single crystal film 2 using a GeO2 as a major component on the single crystal substrate 1, forming a single crystal thin film crystal 3 on the oxide single crystal film 2, solving the oxide single crystal film 2 in a water solution to exfoliate the single crystal thin film crystal 3 from the single crystal substrate 1 and the single crystal thin film crystal 3 is set as a vibration section.
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公开(公告)号：JPH08157297A
公开(公告)日：1996-06-18
申请号：JP30048294
申请日：1994-12-05
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： TANAKA MOTOYUKI , IMAI TAKAHIRO , FUJIMORI NAOHARU
Abstract: PURPOSE: To produce such thin rock crystal as to well satisfy the requirement of reduction in film thickness at a low cost without requiring a large-scale apparatus such as an autoclave. CONSTITUTION: An oxide single crystal film 2 having the rock crystal type crystal structure of germanium dioxide is formed on a single crystal substrate 1 by a sol-gel method and the objective thin single crystal film-shaped rock crystal 3 is formed on the film 2 by a sol-gel method and then separated from the substrate 1 by dissolving the film 2 in an aq. soln. This rock crystal 3 is based on SiO2 and has 5nm to 50μm thickness.
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公开(公告)号：JPH082998A
公开(公告)日：1996-01-09
申请号：JP15673794
申请日：1994-06-15
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： TANAKA MOTOYUKI , IMAI TAKAHIRO , FUJIMORI NAOHARU
Abstract: PURPOSE:To obtain a thin layer of oxide dielectric substance of high crystallinity and orientation by forming an intermediate layer of a metal compound having orienting properties on a single crystal base plate and further forming a thin layer of oxide dielectric substance on the intermediate layer. CONSTITUTION:As a single crystal base plate, are cited that of silicon, sapphire, crystallized quartz, magnesium oxide, strontium titanate and the like and silicon is particularly preferred because of its inexpensiveness. The metal compound for forming the intermediate layer is, a single layer selected from among aluminum nitride, magnesia, alumina, zirconia, yttria, strontium titanate, spinel, yttria- stabilized zirconia or a multilayer laminate therefrom. The thickness of each monolayer is more than 3nm. The oxide dielectric substance is, for example, lithium niobate, lithium borate, zinc oxide or the like and almost all of the oxide dielectric substances can be formed into a thin layer. The thin layer is formed by a known technique such as the sol-gel process or gas-phase synthesis.
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公开(公告)号：JPH07335642A
公开(公告)日：1995-12-22
申请号：JP15048894
申请日：1994-06-08
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： IMAI TAKAHIRO , TANAKA MOTOYUKI , FUJIMORI NAOHARU
IPC: C01B13/14 , H01B3/00 , H01L21/316 , H01L21/8242 , H01L27/10 , H01L27/108
Abstract: PURPOSE:To provide a method of very precisely forming a patterned oxide dielectric thin film on a substrate through a sol.gel method which is cheap and simple. CONSTITUTION:A hydrophilic part of a thermally oxidized film 2 and a water- repellent part of a hydrogen-terminated surface 6 are provided to the surface of a semiconductor substrate 1, and an oxide dielectric precursor solution 7 prepared from hydrophilic solvent is applied only onto the hydrophilic part and then heated for the formation of an oxide dielectric thin film only on the surface of the hydrophilic part of the substrate 1.
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Patent Agency Ranking
公开(公告)号：JPH07230911A
公开(公告)日：1995-08-29
申请号：JP1940394
申请日：1994-02-16
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： TANAKA MOTOYUKI , IMAI TAKAHIRO , FUJIMORI NAOHARU
Abstract: PURPOSE:To make the magnetoresistance effect larger and the anistropy smaller by using an ion plating method which utilizes vacuum arc discharge for an evaporating source, for forming he films of a metallic laminated film magnetoresistance element. CONSTITUTION:The metallic laminated film for magnetic resistance element is manufactured by alternately laminating two kinds of layers, i.e., layers 1 whose main component is ferromagnetic metal and layers 2 whose main component is soft magnetic material, and is a metallic laminated film wherein particles 3 composed of the components of one kind of layers coexist scattered, or in whose only one kind of layers particles are scattered. A metallic laminated film like this is manufactured by rotating a base material arranging the base material so that the rotation axis and the coated surface of the base material may be approximately parallel, and coating the base material alternately with metals evaporated from an at least one soft magnetic metal evaporating source and an at least one ferromagnetic metal evaporating source, in a film forming apparatus having gas supplying and exhausting parts. And, on this occasion, an ion plating method which utilizes vacuum arc discharge is used for the evaporating sources.
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公开(公告)号：JPH0766930B2
公开(公告)日：1995-07-19
申请号：JP4807789
申请日：1989-02-27
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： NAKAMURA TSUTOMU , IMAI TAKAHIRO , IKEGAYA AKIHIKO , FUJIMORI NAOHARU
IPC: H01L21/60
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公开(公告)号：JPH0758256A
公开(公告)日：1995-03-03
申请号：JP16209393
申请日：1993-06-30
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： YAMAMOTO YOSHIYUKI , CHIKUNO TAKASHI , IMAI TAKAHIRO , FUJIMORI NAOHARU
IPC: H01L23/373 , C30B29/04
Abstract: PURPOSE:To remarkably lessen a plate-like diamond board in heat resistance by a method wherein fins of material prescribed in thermal conductivity are provided to the diamond board. CONSTITUTION:Grooves are provided in a polycrystalline Si board with diamond abrasive grains through a scratching process. A cBN sintered body is inserted into each of the grooves provided in the Si board. A polycrystalline demimonde layer is made to grow as thick as 1mm on the polycrystalline Si board where the cBN sintered bodies are provided. Then, the polycrystalline Si board is treated with mixed acid, whereby a diamond heat dissipating board provided with cBN fins can be obtained. This heat dissipating board has such a heat dissipating property of 0.8 deg.C/W under a forced-feed cooling air flow of 2m/sec and is remarkably enhanced in heat dissipating properties as compared with one provided with no fins. Fins are formed of material which is not always diamond self-sustaining film but larger than 1W/cm.K in thermal conductivity.
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公开(公告)号：JPH0745748A
公开(公告)日：1995-02-14
申请号：JP19211893
申请日：1993-08-03
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： YAMAMOTO YOSHIYUKI , IMAI TAKAHIRO , FUJIMORI NAOHARU
Abstract: PURPOSE:To enable a diamond layer to be enhanced in growth rate and lessened in manufacturing cost by a method wherein at least a vapor synthetic diamond layer is provided and specified in thermal conductivity, dielectric constant, and dielectric loss by changing methane gas in concentration. CONSTITUTION:A diamond layer grown through a hot filament CVD method using material gas which contains 5% of methane has a dielectric constant of 6.6, a dielectric loss of 0.04 on a frequency of 100MHz, and a growth rate of 10mum/hr. The diamond layer is 12W/cm.K in thermal conductivity high enough for a practical use and 1/3 or below as low in manufacturing cost as a conventional one. As mentioned above, a diamond layer decreases in dielectric properties with an increase in a growth rate, and provided that the diamond layer has a thermal conductivity of 10W/cm.K or above, a dielectric constant of 6.0 or above, and a dielectric loss of 0.01 or above on a frequency of 100MHz, it is high enough in dielectric properties for a practical use, so that the diamond layer can be enhanced in growth rate to such an extent that it meets the above dielectric properties.
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公开(公告)号：JPH06349972A
公开(公告)日：1994-12-22
申请号：JP14169193
申请日：1993-06-14
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： YAMAMOTO YOSHIYUKI , IMAI TAKAHIRO , FUJIMORI NAOHARU
IPC: H01L23/12 , H01L23/36 , H01L23/373
Abstract: PURPOSE:To obtain a heat dissipating board having a relatively low cost and large heat dissipating characteristics by connecting fins in which a material has a predetermined value or more of thermal conductivity to a platelike base material. CONSTITUTION:Fins 2 of, for example, vapor phase synthetic crystalline diamond having a thermal conductivity of 5W/cm.K or more are embedded in a depth half the thickness of a platelike mounting board 1 or deeper in which its material is alumina, etc., and which has relatively low thermal conductivity and general-purpose properties. Thus, a semiconductor element has a structure in which heat generated from the element is dissipated through the diamond having high thermal conductivity, and a quantity of a material having a high cost and high thermal conductivity is reduced, and its heat dissipating efficiency can be increased. Accordingly, a high output, a high speed element which has been heretofore impossible to mount on a board using alumina, etc., can be mounted with a low cost.
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