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    CMOS-COMPATIBLE MEM SWITCHES AND METHOD OF MAKING
    141.
    发明公开
    CMOS-COMPATIBLE MEM SWITCHES AND METHOD OF MAKING 审中-公开
    CMOS兼容的微机电开关和方法及其

    公开(公告)号：EP1230660A2

    公开(公告)日：2002-08-14

    申请号：EP00959339.3

    申请日：2000-08-23

    Applicant: HRL LABORATORIES, LLC

    Inventor： CHOW, Lap-Wai ,  HSU, Tsung-Yuan ,  HYMAN, Daniel, J. ,  LOO, Robert, Y. ,  OUYANG, Paul ,  SCHAFFNER, James, H. ,  SCHMITZ, Adele ,  SCHWARTZ, Robert, N.

    IPC: H01H50/00

    CPC classification number: B81C1/00246 ,  B81B2201/014 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01H1/58 ,  H01H59/0009 ,  H01H2001/0057

    Abstract: A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as viasto connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude towards each other. Thus, when the contacts are moved towards each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.

    MICRO-ELECTRO-MECHANICAL SWITCH BEAM CONSTRUCTION WITH MINIMIZED BEAM DISTORTION AND METHOD FOR CONSTRUCTING
    146.
    发明公开
    MICRO-ELECTRO-MECHANICAL SWITCH BEAM CONSTRUCTION WITH MINIMIZED BEAM DISTORTION AND METHOD FOR CONSTRUCTING 审中-公开
    带杆结构的微电子机械开关，最小限度地损坏和施工过程

    公开(公告)号：EP2377138A4

    公开(公告)日：2014-04-16

    申请号：EP09837894

    申请日：2009-12-16

    Applicant: ANALOG DEVICES INC

    Inventor： ELLIS DENIS ,  FITZGERALD PADRAIG ,  WONG JO-EY ,  GOGGIN RAYMOND ,  ECKL RICHARD TARIK

    IPC: H01H59/00 ,  B81B7/04

    CPC classification number: H01H11/00 ,  B81B3/0081 ,  B81B2201/014 ,  H01H1/0036 ,  H01H59/0009 ,  Y10T29/49002 ,  Y10T29/49105

    Abstract: Disclosed is a micro-electro-mechanical switch, including a substrate having a gate connection, a source connection, a drain connection and a switch structure, coupled to the substrate. The switch structure includes a beam member, an anchor and a hinge. The beam member having a length sufficient to overhang both the gate connection and the drain connection. The anchor coupling the switch structure to the substrate, the anchor having a width. The hinge coupling the beam member to the anchor at a respective position along the anchor's length, the hinge to flex in response to a charge differential established between the gate and the beam member. The switch structure having gaps between the substrate and the anchor in regions proximate to the hinges.

    Abstract translation: 公开了一种微机电开关，其包括耦合到衬底的具有栅极连接的衬底，源极连接，漏极连接和开关结构。 开关结构包括梁构件，锚和铰链。 所述梁构件具有足以突出所述栅极连接和所述排水连接两端的长度。 该锚固件将开关结构耦合到基板，该锚具有一宽度。 铰链将梁构件沿着锚固件的长度在相应位置处联接到锚固件，铰链响应于门和梁构件之间建立的电荷差异而弯曲。 开关结构在接近铰链的区域中在基板和锚固件之间具有间隙。

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