公开(公告)号：WO1993015522A1

公开(公告)日：1993-08-05

申请号：PCT/US1993000175

申请日：1993-01-07

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： MASSACHUSETTS INSTITUTE OF TECHNOLOGY ,  GEIS, Michael, W.

IPC: H01L29/16

CPC classification number: H01J1/3042 ,  H01J2201/30457

Abstract: A cold cathode device is provided comprising a wide-bandgap (>5 eV) material exhibiting negative electron affinities, low trap densities, and high carrier mobilities, a junction between a first region (50) of the wide-bandgap material having n-type conductivity and a second region (20) of the wide-bandgap material having p-type conductivity, and a conductive contact (30) to forward bias the junction causing electrons to be emitted near the junction into an exterior region.

Abstract translation: 提供一种冷阴极器件，其包括具有负电子亲和力，低陷阱密度和高载流子迁移率的宽带隙（> 5eV）材料，具有n型宽带隙材料的第一区域（50） 电导率的第二区域（20）和具有p型导电性的宽带隙材料的第二区域（20），以及导电接触（30），用于向所述接合端正向偏置所述结，使得在所述结附近发射的电子进入外部区域。

公开(公告)号：WO2008001805A1

公开(公告)日：2008-01-03

申请号：PCT/JP2007/062885

申请日：2007-06-27

Applicant: 住友電気工業株式会社 ,  山本 喜之 ,  植田 暁彦 ,  西林 良樹 ,  今井 貴浩

Inventor： 山本 喜之 ,  植田 暁彦 ,  西林 良樹 ,  今井 貴浩

IPC: H01J1/304 ,  H01J37/073 ,  H01L21/027

CPC classification number: H01J1/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/073 ,  H01J37/3174 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26

Abstract: Intended is to provide an electron radiation cathode of a high brightness, low energy dispersion and a long lifetime. Also intended is to provide a diamond electron radiation cathode, which can be sufficiently stably gripped, which is sharpened at its leading end and which is improved in a field intensity. The diamond electron radiation cathode (110) is characterized in that it is divided into at least three regions, that is, a leading end region (203) for irradiating a column-shaped leading end with electrons, a trailing end region (201) confronting in the longitudinal direction and adapted to be gripped, and a radially thinned intermediate region (202), in that the trailing end region has a sectional area of 0.2 mm 2 , in that the leading region has a sharpened leading end, and in that the radially thinned intermediate region has a sectional area of 0.1 mm 2 at most.

Abstract translation: 旨在提供高亮度，低能量分散和长寿命的电子辐射阴极。 还旨在提供一种金刚石电子辐射阴极，其能够被充分稳定地夹持，其在其前端被削尖并且在场强度方面得到改善。 金刚石电子辐射阴极（110）的特征在于，其被划分为至少三个区域，即用于用电子照射柱状前端的前端区域（203），面对着的后端区域（201） 在纵向方向上并适于被夹持，并且径向变薄的中间区域（202），其中后端区域的截面积为0.2mm 2，其中，引导区域具有锐化 并且径向变薄的中间区域的截面积最多为0.1mm 2。

公开(公告)号：WO2007040673A1

公开(公告)日：2007-04-12

申请号：PCT/US2006/022780

申请日：2006-06-12

Applicant: VIRGIN ISLANDS MICROSYSTEMS, INC.

Inventor： GORRELL, Jonathan

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30457

Abstract: A diamond field emission tip and methods of forming such diamond field emission tips, for use with cathodes that will act as a source of and emit beams of charged particles.

Abstract translation: 金刚石场发射尖端和形成这种金刚石场发射尖端的方法，用于与作为带电粒子束的源的阴极。

公开(公告)号：WO2006057459A3

公开(公告)日：2006-12-14

申请号：PCT/JP2005022244

申请日：2005-11-28

Applicant: KOCHI IND PROMOTION CT ,  CASIO COMPUTER CO LTD ,  NISHIMURA KAZUHITO ,  SASAOKA HIDEKI

Inventor： NISHIMURA KAZUHITO ,  SASAOKA HIDEKI

IPC: H01J1/304

CPC classification number: H01J1/3048 ,  H01J2201/30457

Abstract: An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5nm to 10nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.

Abstract translation: 在基板上形成具有X射线衍射中的金刚石图案并由多个粒径为5nm〜10nm的金刚石细晶粒形成的电子发射膜。 当电子发射膜导致发射电流流动时，电子发射膜可以将场强限制在低水平，并且具有均匀的电子发射特性。

公开(公告)号：WO2006057459A2

公开(公告)日：2006-06-01

申请号：PCT/JP2005/022244

申请日：2005-11-28

Applicant: KOCHI INDUSTRIAL PROMOTION CENTER ,  CASIO COMPUTER CO., LTD. ,  NISHIMURA, Kazuhito ,  SASAOKA, Hideki

Inventor： NISHIMURA, Kazuhito ,  SASAOKA, Hideki

IPC: H01J1/304

CPC classification number: H01J1/3048 ,  H01J2201/30457

Abstract: An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5nm to 10nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.

Abstract translation: 在基板上形成具有X射线衍射中的金刚石图案并由多个粒径为5nm〜10nm的金刚石细晶粒形成的电子发射膜。 当电子发射膜导致发射电流流动时，电子发射膜可以将场强限制在低水平，并且具有均匀的电子发射特性。

公开(公告)号：WO0231891A9

公开(公告)日：2003-07-17

申请号：PCT/US0131388

申请日：2001-10-09

Applicant: UNIV CHICAGO ,  GRUEN DIETER M ,  AUCIELLO ORLANDO H ,  CARLISLE JOHN A ,  SWAIN GREG M ,  DING MING

Inventor： GRUEN DIETER M ,  KRAUSS ALAN R DI ,  AUCIELLO ORLANDO H ,  CARLISLE JOHN A ,  SWAIN GREG M ,  DING MING

IPC: B82B1/00 ,  B01J3/06 ,  C01B31/06 ,  C23C16/27 ,  C30B25/10 ,  H01B1/04 ,  H01J1/30 ,  H01J1/304 ,  H01J31/12 ,  H01J35/06 ,  H01J37/073 ,  H01M4/02 ,  H01L31/0312

CPC classification number: C23C16/274 ,  B01J3/067 ,  B01J2203/0655 ,  C01B32/25 ,  C23C16/277 ,  C23C16/278 ,  C23C16/279 ,  C30B25/105 ,  C30B29/04 ,  C30B29/605 ,  H01B1/04 ,  H01J1/30 ,  H01J2201/30457

Abstract: An electrode having a surface of an electrically conducting ultrananocrystalline diamond having not less than 10 atoms/cm nitrogen with an electrical conductivity at ambient temperature of not less than about 0.1 ( OMEGA cm) is disclosed as is a method of remediating toxic materials with the electrode. An electron emission device incorporating an electrically conducting ultrananocrystalline diamond having not less that 10 atoms/cm nitrogen with an electrical conductivity at ambient temperature of not less than about 0.1 ( OMEGA cm) is disclosed.

Abstract translation: 具有不小于10 19原子/ cm 3氮的导电超微晶金刚石的表面的电极，在环境温度下的电导率不小于约0.1（OMEGA·cm）-1， 公开了用电极补救有毒物质的方法。 包含具有不小于10 19个原子/ cm 3氮的导电超微晶金刚石的电子发射装置，其环境温度不小于约0.1（OMEGA·cm）-1的电导率为 披露。

公开(公告)号：WO02058139A2

公开(公告)日：2002-07-25

申请号：PCT/US2002/000506

申请日：2002-01-17

IPC: H01L23/373 ,  C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01L23/00

CPC classification number: H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J2201/30457 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却装置中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。

公开(公告)号：WO01061719A1

公开(公告)日：2001-08-23

申请号：PCT/US2001/005229

申请日：2001-02-16

IPC: B82B1/00 ,  C01B31/02 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30457 ,  H01J2201/30469 ,  Y10S977/745 ,  Y10S977/939

Abstract: The present invention is directed to a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising same, and a field emitter comprising the cathode. It is also directed to a method of preventing the evaporation of carbon from a field emitter comprising a cathode comprised of nanotubes by coating the nanotube with diamond or diamond-like carbon. In another aspect, the present invention is directed to a method of preventing the evaporation of carbon from an electron field emitter comprising a cathode comprised of nanotubes, which method comprises coating the nanotubes with diamond or diamond-like carbon.

Abstract translation: 本发明涉及涂覆有金刚石或类金刚石碳的纳米管，包含该金刚石或类金刚石碳的场发射极阴极以及包括该阴极的场致发射体。 还涉及一种通过用金刚石或类金刚石碳涂覆纳米管来防止来自包括由纳米管组成的阴极的场发射体蒸发碳的方法。 另一方面，本发明涉及一种防止碳从包含由纳米管构成的阴极的电子发射体蒸发的方法，该方法包括用金刚石或类金刚石碳涂覆纳米管。

公开(公告)号：WO01006531A1

公开(公告)日：2001-01-25

申请号：PCT/US2000/017065

申请日：2000-06-21

IPC: H01J9/44 ,  H01J1/304 ,  H01J3/02 ,  H01J3/18 ,  H01J9/02 ,  H01J29/04

CPC classification number: H01J29/04 ,  H01J3/022 ,  H01J2201/30457

Abstract: A compact electron gun includes a field emission cathode (12), a Pierce-like electrode (18), a gate layer (14), a focus lens layer (16), a focus lens (20), and a convergence cup (22).

Abstract translation: 小型电子枪包括场致发射阴极（12），皮尔斯样电极（18），栅极层（14），聚焦透镜层（16），聚焦透镜（20）和会聚杯 ）。

公开(公告)号：WO0010190A2

公开(公告)日：2000-02-24

申请号：PCT/EP9905324

申请日：1999-07-26

Applicant: FRENTON LTD ,  GORDEEV SERGEY KONSTANTINOVICH ,  KOSAREV ANDREY IVANOVICH ,  ANDRONOV ALEKSANDR NICOLAEVICH ,  VINOGRADOV ANDREY IAKOVLEVICH

Inventor： GORDEEV SERGEY KONSTANTINOVICH ,  KOSAREV ANDREY IVANOVICH ,  ANDRONOV ALEKSANDR NICOLAEVICH ,  VINOGRADOV ANDREY IAKOVLEVICH

IPC: H01J1/02 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30457

Abstract: The present invention relates to a field emitter of electrons comprising a substrate with a deposited layer on it. According to the invention the substrate is made of nanomaterial, i.e. a porous carbon material having skeleton structure, with an open porosity of 35-70 % and the deposited layer is a carbon film obtained from a mixture of hydrocarbon or hydrocarbons and hydrogen using a very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) technique.

Abstract translation: 本发明涉及电子的场发射体，其包括在其上具有沉积层的衬底。 根据本发明，衬底由纳米材料制成，即具有骨架结构的多孔碳材料，开放孔隙率为35-70％，沉积层是由烃或烃和氢气的混合物获得的碳膜，使用非常 高频等离子体增强化学气相沉积（VHF PECVD）技术。