公开(公告)号：JPS5658345A

公开(公告)日：1981-05-21

申请号：JP13174180

申请日：1980-09-24

Applicant: CSELT CENTRO STUDI LAB TELECOM

Inventor： PIERO BERUFUORUTE ,  RENZO BORUCHINON

IPC: H04L5/14

公开(公告)号：JPS55132159A

公开(公告)日：1980-10-14

申请号：JP3632580

申请日：1980-03-24

Applicant: CSELT CENTRO STUDI LAB TELECOM

Inventor： GIURIO BARUBERISU ,  DANIERE PATSUZAGURIA

IPC: H04J3/06 ,  H04L12/64

公开(公告)号：JPS5527696A

公开(公告)日：1980-02-27

申请号：JP10033379

申请日：1979-08-08

Applicant: CSELT CENTRO STUDI LAB TELECOM

Inventor： BROSIO ALBERTO ,  SEANO VITTORIO

IPC: H03G3/20 ,  H01L33/00 ,  H01S20060101 ,  H01S5/068 ,  H01S5/0683 ,  H03G20060101 ,  H03L5/00 ,  H04B10/155

公开(公告)号：JPS54147757A

公开(公告)日：1979-11-19

申请号：JP5425179

申请日：1979-05-04

Applicant: Cselt Centro Studi Lab Telecom

Inventor： PAORO BIERI ,  SARUBUATORE DE PADOBUA

IPC: H01Q13/02 ,  H01Q17/00 ,  H01Q19/13

CPC classification number: H01Q19/13 ,  H01Q13/025 ,  H01Q17/001

公开(公告)号：JPS54126434A

公开(公告)日：1979-10-01

申请号：JP2759079

申请日：1979-03-08

Applicant: CSELT CENTRO STUDI LAB TELECOM

Inventor： ENZO GARETSUTEI ,  PENATO MANFURETSUDEI

IPC: G06F12/16 ,  G06F3/00 ,  G06F11/10 ,  G11C19/28 ,  G11C27/04 ,  H04Q3/545

公开(公告)号：JPS5477727A

公开(公告)日：1979-06-21

申请号：JP13944978

申请日：1978-11-14

Applicant: CSELT CENTRO STUDI LAB TELECOM

Inventor： GIUSETSUPE KOSHITO

IPC: C03C21/00 ,  C03B19/01 ,  C03B37/012 ,  C03B37/014 ,  C03C3/06 ,  G02B6/00 ,  G02B6/02

公开(公告)号：JPS5448102A

公开(公告)日：1979-04-16

申请号：JP10450178

申请日：1978-08-29

Applicant: CSELT CENTRO STUDI LAB TELECOM

Inventor： GIOBUANNI TAMUBURERI

IPC: H04B10/00 ,  H03M5/20 ,  H04B10/155 ,  H04L25/49

公开(公告)号：JP2000353388A

公开(公告)日：2000-12-19

申请号：JP2000145362

申请日：2000-05-17

Applicant: CSELT CENTRO STUDI LAB TELECOM

Inventor： GANDINI MARCO ,  TORIELLI ALESSANDRO ,  TUROLLA MAURA

IPC: G11C15/04

Abstract: PROBLEM TO BE SOLVED: To provide a ternary CAM memory(contents address-able memory) which can be designed as an integrated circuit library cell being able to be incorporated in a user device. SOLUTION: In a CAM memory storing data words, bits of the data words can take a neutral logic value other than two complement logic value. The CAM memory includes a matrix(MA) of a memory cell. In this matrix, one pair of cell is allotted to each bit which can take ternary constitution. Access can be enabled so that circuits CT1-CT3, WR, SR; CT11-SR1, CT21-SR2 for controlling the access of a memory matrix performs comparison during CAM mode operation or data is written or read by direct address specifying in RAM mode.

公开(公告)号：JP2000187517A

公开(公告)日：2000-07-04

申请号：JP34181199

申请日：1999-12-01

Applicant: CSELT CENTRO STUDI LAB TELECOM

Inventor： BALISTRERI EMANUELE ,  BURZIO MARCO

IPC: H01L21/8238 ,  G05F3/24 ,  H01L27/02 ,  H01L27/092 ,  H03B5/04 ,  H03F1/30 ,  H03K19/003

Abstract: PROBLEM TO BE SOLVED: To provide a device for compensating the fluctuation of a process and of an operation parameter in a CMOS integrated circuit. SOLUTION: This device includes means (CP and CT) for generating 1st and 2nd compensation signals. These compensation signals depend on the quality index of a manufacturing process and the operation temperature of P type and N type transistors of an integrated circuit and also can compensate variation from prescribed value of quantity to be controlled. The deviation occurs because the quality index and the temperature deviate from central value generating desired output parameter value. Also, a compensating device can preferably be realized in the form of a CMOS integrated circuit together with a device (OS) to be compensated.

公开(公告)号：JP2000022245A

公开(公告)日：2000-01-21

申请号：JP10155099

申请日：1999-04-08

Applicant: CSELT CENTRO STUDI LAB TELECOM

Inventor： MELIGA MARINA ,  PAOLETTI ROBERTO ,  SCOFET MARCO ,  TALLONE LUIGI

IPC: G02B6/42 ,  H01S3/08 ,  H01S5/026 ,  H01S5/12 ,  H01S5/14

Abstract: PROBLEM TO BE SOLVED: To provide a laser module which can shorten a full length of a cavity. SOLUTION: A laser module 1 includes a Fabry-Pero cavity active element 2 having a facet 3 for carrying an anti-reflection film thereon, and an external cavity defined by an optical fiber Bragg grating having a low reflection factor. The grating 5 exhibits a modulation profile having a reflection factor asymmetrical and non-uniform in a length direction of the grating. Thereby a position on an equivalent mirror surface is offset toward an end of the grating 5 closer to the active element 2.