QUANTUM DOT LASERS
    151.
    发明申请
    QUANTUM DOT LASERS 审中-公开
    量子点激光

    公开(公告)号:WO02058200A9

    公开(公告)日:2003-05-30

    申请号:PCT/US0131256

    申请日:2001-10-05

    Applicant: STC UNM

    Abstract: A quantum dot active region is disclosed in which quantum dot layers are formed using a self-assembled growth technique. In one embodiment, growth parameters are selected to control the dot density and dot size distribution to achieve desired optical gain spectrum characteristics. In one embodiment, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In another embodiment, the optical gain is selected to increase the saturated ground state gain for wavelengths of 1260 nanometers and greater. In other embodiments, the quantum dots are used as the active region in laser devices, including tunable lasers and monolithic multi-wavelength laser arrays.

    Abstract translation: 公开了量子点活性区域,其中量子点层使用自组装生长技术形成。 在一个实施例中,选择生长参数以控制点密度和点尺寸分布以实现期望的光学增益谱特性。 在一个实施例中,选择点尺寸分布和与点的量子限制状态相关联的光学跃迁能量值的顺序以有助于在扩展的波长范围上形成连续的光增益谱。 在另一个实施例中,选择光增益以增加1260纳米和更大波长的饱和基态增益。 在其他实施例中,量子点被用作激光器件中的有源区域,包括可调谐激光器和单片多波长激光器阵列。

    RING LASER INTEGRATED WITH SILICON-ON-INSULATOR WAVEGUIDE
    152.
    发明申请
    RING LASER INTEGRATED WITH SILICON-ON-INSULATOR WAVEGUIDE 审中-公开
    环形激光器与硅绝缘体波导集成

    公开(公告)号:WO2017200620A3

    公开(公告)日:2018-01-18

    申请号:PCT/US2017019907

    申请日:2017-02-28

    Applicant: STC UNM

    Abstract: The present invention provides one or more injection-lockable whistle-geometry semiconductor ring lasers, which may be cascaded, that are integrated on a common silicon-on-insulator (SOI) substrate with a single-frequency semiconductor master laser, wherein the light output from the semiconductor master laser is used to injection-lock the first of the semiconductor ring lasers. The ring lasers can be operated in strongly injection-locked mode, while at least one of them is subjected to direct injection current modulation.

    Abstract translation: 本发明提供了一种或多种可级联连接的可注入锁定的口哨几何结构半导体环形激光器,其通过单频半导体主激光器集成在公共绝缘体上硅(SOI)衬底上,其中光输出 从半导体主激光器被用于注入锁定第一半导体环形激光器。 环形激光器可以在强烈的注入锁定模式下工作,而其中至少有一个受到直接注入电流调制。

    RAPID PHENOTYPE TESTS FOR ANTITUBERCULAR DRUG SENSITIVITY AND RESISTANCE
    156.
    发明申请
    RAPID PHENOTYPE TESTS FOR ANTITUBERCULAR DRUG SENSITIVITY AND RESISTANCE 审中-公开
    快速表型检测抗雄激素药物敏感性和耐药性

    公开(公告)号:WO2015126922A3

    公开(公告)日:2015-11-05

    申请号:PCT/US2015016349

    申请日:2015-02-18

    Applicant: STC UNM

    Abstract: In one embodiment, the invention provides methods of identifying the sensitivity and resistance to therapeutic drug regimens in a subject who suffers from, or who is suspected of suffering from, a Mycobacterium infection, the method comprising administering (1) isotopically labeled Pretomanid and/or Delaminid, or (2) isotopically labeled ethionamide and/or prothionamide, or (3) isotopically labeled pyrazinamide, or (4) isotopically-labeled isoniazid to the subject and thereafter measuring levels in a subject-derived sample of one or more isotopically-labeled markers corresponding to Mycobacterium-actiwated drug metabolites or degradation products, wherein the absence of detectable levels of Mycobacterium-activated drug metabolites or degradation products indicates either that the subject does not suffer from a Mycobacterium infection or suffers from a Mycobacterium infection which is resistant to treatment with the administered drug regimen.

    Abstract translation: 在一个实施方案中,本发明提供了鉴定患有或疑似患有分枝杆菌感染的受试者中对治疗药物方案的敏感性和抗性的方法,所述方法包括给予(1)同位素标记的Pretomanid和/或 (2)同位素标记的乙硫异烟胺和/或丙硫异烟胺,或(3)同位素标记的吡嗪酰胺,或(4)同位素标记的异烟肼,然后测量受试者衍生的样品中一种或多种同位素标记的 对应于分枝杆菌活化的药物代谢物或降解产物的标记,其中不存在可检测水平的分枝杆菌属活化的药物代谢物或降解产物表明对象不患有分枝杆菌感染或患有对治疗有抗性的分枝杆菌感染 与管理的药物疗法。

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